TRANSISTORS PNP 100V 10A Search Results

Contextual Info: Ordering number: EN 1 Q 7 9 A 2SB887/2SD1197 NO.1079A F PNP/NPN Planar SiliconDarlington Transistors 100V/10A Driver Applications Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . High DC current gain

2N5740

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2N5740 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -5A ·Wide Area of Safe Operation

2N5738

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2N5738 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -5A ·Wide Area of Safe Operation

ztx753

Abstract: ZTX752 ztx751 SE163
Contextual Info: PNP Silicon Planar Medium Power Transistors ZTX750 ZTX752 ZTX751 ZTX753 FEA T U R E S • • • • • • • • • 1.5W power dissipation at T atnb = 2 5 ° C * 2V continuous Iq Excellent gain characteristics to 2A High V CE0: up to 100V Low saturation voltages

JANS2N2484

Abstract: JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373
Contextual Info: JANS QUALIFIED BI-POLAR TRANSISTORS* Part # JANS QUALIFIED BI-POLAR TRANSISTORS* Type Voltage hFE @ Ic Rated Ic Package JANS QUALIFIED BI-POLAR TRANSISTORS* JANS QUALIFIED BI-POLAR TRANSISTORS* Part # Slash Sheet Type Voltage hFE @ Ic Rated Ic Package JANS2N930

UP1853G-AA3-R

Abstract: UTC SILICON PNP 3A TRANSISTORS UP1853
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1853 PNP SILICON TRANSISTOR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS „ FEATURES * 5A Continuous Current , up to 10A peak current * Very Low Saturation Voltages * Excellent Gain Characteristics Specified up to 10A * PD = 3W

BDV66B

Abstract: BDV66A BDV67A BDV66 Multicomp, BDV66B BDV67B NPN Transistor VCEO 80V 100V DARLINGTON Multicomp, BDV67B TO-247 NPN SILICON POWER TRANSISTORS
Contextual Info: BDV66, 67 Darlington Transistors Features: • Collector-Emitter sustaining voltage VCEO sus = 80V (Minimum) - BDV66A, BDV67A = 100V (Minimum) - BDV66B, BDV67B • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 10A • Monolithic construction with Built-in Base-Emitter Shunt Resistor.

diode r207

Abstract: UTC SILICON PNP 3A TRANSISTORS PNP 100V 2A UP1853
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1853 PNP SILICON TRANSISTOR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS „ FEATURES * 5A continuous current , up to 10A peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10A * PD = 3W

NTE251

Abstract: Darlington 40A
Contextual Info: NTE251 NPN & NTE252 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1853 PNP SILICON TRANSISTOR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS „ FEATURES * 5A Continuous Current , up to 10A peak current * Very Low Saturation Voltages * Excellent Gain Characteristics Specified up to 10A * PD = 3W

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1853 PNP SILICON TRANSISTOR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS  FEATURES * 5A Continuous Current , up to 10A peak current * Very Low Saturation Voltages * Excellent Gain Characteristics Specified up to 10A * PD = 3W

MJ2955

Abstract: 2N3055 power amplifier circuit 2N3055 power circuit isc MJ2955 transistor 2n3055 application note 2N3055 specification 2n3055 circuit 2n3055 datasheet equivalent transistor 2n3055 power transistor 2n3055
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors MJ2955 DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain: hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage: VCE sat = -1.1V(Max)@ IC= -4A ·Complement to Type 2N3055

DARLINGTON 3A 100V npn

Abstract: hfe 2500 NTE264
Contextual Info: NTE263 NPN & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.

BDW94

Abstract: BDW94C BDW94B BDW94A
Contextual Info: SavantIC Semiconductor Product Specification BDW94/A/B/C Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·High DC Current Gain ·DARLINGTON ·Complement to type BDW93/A/B/C APPLICATIONS ·Hammer drivers, ·Audio amplifiers applications PINNING

NTE249

Abstract: SILICON COMPLEMENTARY transistors darlington darlington complementary power amplifier
Contextual Info: NTE249 NPN & NTE250 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications.

MJ4035

Abstract: Darlington Transistors marking code TO3 "Darlington Transistors" MJ4032 transistors pnp 100v 10A
Contextual Info: Central MJ4032 PNP MJ4035 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR MJ4032, MJ4035 types are Complementary Silicon Power Darlington Transistors designed for general purpose and amplifier

BDW94C

Abstract: BDW94 BDW94B BDW94A
Contextual Info: Inchange Semiconductor Product Specification BDW94/A/B/C Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC Current Gain ・DARLINGTON ・Complement to type BDW93/A/B/C APPLICATIONS ・Hammer drivers, ・Audio amplifiers applications

2N6282

Abstract: 2N6284 2N6285 2N6287 2N6283 2N6286 30yA
Contextual Info: DARLINGTON COMPLEMETARY SILICON POWER TRANSISTORS .designed for use general-purpose Amplifier and low -frequency switching applications. Boca Semiconductor Corp BSC http://www.bocasemi.com FEATURES * High DC Current Gain@lc= 10A hFE= 2400 Typ - 2N6282,2N6283,2N6284

NTE270

Contextual Info: NTE270 NPN & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.

2SA1010

Abstract: 2SA10-10 2SC2334 HIGH VOLTAGE POWER PNP TRANSISTORS transistors pnp 100v 10A
Contextual Info: SavantIC Semiconductor Product Specification 2SA1010 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2334 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters

Contextual Info: 2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for

BD912

Abstract: BD910 BD909 BD911 transistors pnp 100v 10A
Contextual Info: SavantIC Semiconductor Product Specification BD910 BD912 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD909 BD911 APPLICATIONS ·Intented for use in power linear and switching applications PINNING PIN DESCRIPTION 1

Contextual Info: Inchange Semiconductor Product Specification BD910 BD912 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD909 BD911 APPLICATIONS ・Intented for use in power linear and switching applications PINNING PIN DESCRIPTION

NTE390

Abstract: NTE391
Contextual Info: NTE390 NPN & NTE391 (PNP) Silicon Complementary Transistors General Purpose Description: The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications.