TRASISTOR Search Results

Contextual Info: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed

NTE281

Abstract: NTE280 NTE281MCP
Contextual Info: NTE280 NPN & NTE281 (PNP) Silicon Complementary Trasistors Audio Power Amplifier Description: The NTE280 (NPN) and NTE281 (PNP) are silicon complementary transistors in a TO3 type package designed for use in high power, high fidelity audio frequency amplifier applications.

trasistor

Abstract: 2SB1465 NEC RELAY nec 5
Contextual Info: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed

CK06BX104K

Abstract: M118 SD1423 SD1424 trasistors
Contextual Info: SD1423 RF & MICROWAVE TRANSISTORS 800-960MHz BASE STATION APPLICATIONS . . . . 800 - 960 MHz 24 VOLTS EFFICIENCY 50% COMMON EMITTER GOLD METALLIZATION CLASS AB LINEAR OPERATION POUT = 15 W MIN. WITH 8.0 dB GAIN .230 6LFL M118 epoxy sealed ORDER CODE SD1423

trasistor relay

Abstract: 2SB1465
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

transistor 2N3504

Abstract: 2N3503 2N3504 2N3505 2N3502
Contextual Info: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm inches PNP SILICON PLANAR EPITAXIAL TRANSISTORS 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • SILICON PLANAR EPITAXIAL PNP

LCD display jhd

Abstract: jhd 16a S-1380 JHD LCD S-81250SGY s-7116A TRANSISTOR PNP BA RT SOT 89 S-87050 M6M80041 notebook Universal LCD inverter AVT
Contextual Info: CMOS IC Product Catalog Components Headquarters Product Catalog CMOS IC Quartz Crystals Micro Batteries Fiber Optics MATERIALS Liquid Crystal Display Custom LCD Module Please visit our HomePage for more new information. <http://www.sii.co.jp/compo> Contents

p4 Titan VRM 10.0

Abstract: RG82845 rg82845g phd55n03 Asus 47M534 lpc47m534 A66 asus phd45n03 smsc lpc47m534
Contextual Info: 5 4 3 2 1 RAINIER-CR PROJECT Rev.A03 : 01/28/2003 VRM on Board BROOKDALE-4 DDR SERIAL DDR SOCKET DDR_TERMINATION AGP 4X Page Page Page Page Page Page Page Page Page Page Page Page Page 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. VGA CONNECTOR ICH4-1

trasistor

Abstract: MPQ3798 MPQ3799 trasistor pin configuration transistor B 116
Contextual Info: MPQ3798 MPQ3799 PNP SILICON QUAD TRANSISTOR TO-116 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ3798, MPQ3799 types are comprised of four independent Silicon PNP Transistors mounted in a 14 PIN DIP, designed for low level and low noise applications. MAXIMUM RATINGS: TA=25°C

2n3503

Contextual Info: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm inches PNP SILICON PLANAR EPITAXIAL TRANSISTORS 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • SILICON PLANAR EPITAXIAL PNP

2N3503

Abstract: 2N3505
Contextual Info: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm inches PNP SILICON PLANAR EPITAXIAL TRANSISTORS 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • SILICON PLANAR EPITAXIAL PNP

mps2112

Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

c5287

Abstract: c4381 c3852a c4138 D2494 c4131 transistor c3835 C4020 TO220 transistor c3856 npn c3852
Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in

h1b transistor

Abstract: trasistor sharp ir sensor IR TRANSISTOR
Contextual Info: SHARR LZ2346 LZ2346 Two-power supply + 5 V and + 12 V operation CCIR 1 /3 type B /W CCD Area Sensor for CCIR PIN CONNECTIONS DESCRIPTION LZ2346 is 1/3 -ty p e (6.0 mm) solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices) driven by only

MB3780A

Abstract: mb3780 MB3773 equivalent MB3773 MB3790 MB3771 3.3V replacement of MB3771 100MW MB3761 MB3771
Contextual Info: FUJITSU SEMICONDUCTOR AM41-10101-1E ASSP MANUAL ICS FOR MONITORING POWER VOLTAGE POWER SUPPLY ASSP APPLICATION NOTES ICS FOR MONITORING POWER VOLTAGE POWER SUPPLY ASSP APPLICATION NOTES FUJITSU LIMITED PREFACE • Objectives and Intended Reader The purpose of this manual is to promote the idea among our users that Fujitsu's ICs are easy

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

transistor 2N3504

Abstract: 2N3504 2N3505 2N3503 2N3502
Contextual Info: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm inches PNP SILICON PLANAR EPITAXIAL TRANSISTORS 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • SILICON PLANAR EPITAXIAL PNP

LT 543 common cathode

Abstract: C3336 TC33374VAT TC33369VPA
Contextual Info: Semiconductor, Inc TC33369/70/1/2/3/4 HIGH VOLTAGE POWER SWITCHING REGULATOR FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ ■ The TC33369 through TC33374 are monolithic high voltage power switching regulators that combine the re­ quired converter functions with a unique programmable

S7116A

Abstract: S13P40A IC HS 8110 equivalent transistor s8850 4609 MOSFET INVERTER chip 8-pin 4502 S-2927A bu 808 af S8850 by 808 dfx
Contextual Info: CMOS IC Product Catalog Components Headquaters Product Catalog CMOS IC Quartz Crystals Micro Batteries Fiber Optics MATERIALS Liquid Crystal Display Custom LCD Module Please visit our HomePage for more new information. <http://www.sii.co.jp/compo> Contents

philips ferrite 1z2

Abstract: EI28Z er 6.8 series ferrite transformer C33374 TDK Ferrite Core PC40 604953B02500 ferrite core 1z2 5088a MC33373AP TC333
Contextual Info: Semiconductor, Inc TC33369/70/1/2/3/4 HIGH VOLTAGE POWER SWITCHING REGULATOR FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ ■ The TC33369 through TC33374 are monolithic high voltage power switching regulators that combine the re­ quired converter functions with a unique programmable

Contextual Info: S G S— THOMSON STC D 1• 7 ^ 5 3 7 59C 02216 O T H O M S O N -C S F DIVISIO N S EM IC O N DUCTEUR S DISCRETS D OüüEait. 7 T-*>2~U BYW 08-50-200, R HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T

8327 transistor

Abstract: transistor 8323 S-8327 Step-up Converter sot-23-5 S-8323AXXMC S-8323A25MC-ELF-T2
Contextual Info: SMALL-PACKAGE PWM CONTROL STEP-UP SWITCHING REGULATOR Consisting of a reference voltage source, an oscillation circuit, a power MOSFET and an error amplifier, this series of devices offer high efficiency over a wide range because the control circuit has the ability to change the duty ratio between

low noise transistors bc638

Abstract: BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856
Contextual Info: CHAPTER 4 Index http://onsemi.com 1121 http://onsemi.com 1122 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22

transistor 2n222a

Abstract: 2n222a npn transistor 2n222a 2n222a datasheet 2n222A TRANSISTOR BDC 47 transistor TRansistor 648 2n2222a SOT23 pin configuration transistor 2N2222A bs170 substitute
Contextual Info: EVALUATION KIT FOR TC642/TC646/648 BDC FAN CONTROLLERS TC642EV TC642EV EVALUATION KIT FOR TC642/TC646/648 BDC FAN CONTROLLERS FEATURES GENERAL DESCRIPTION • TC642EV is a fully assembled 4 inch by 6 inch circuit board that allows the user to evaluate and prototype brushless