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    TRC 4800 Search Results

    TRC 4800 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ML4800CP Rochester Electronics LLC 1A POWER FACTOR CONTROLLER WITH POST REGULATOR, 250kHz SWITCHING FREQ-MAX, PDIP16, PLASTIC, DIP-16 Visit Rochester Electronics LLC Buy
    iW248-00 Renesas Electronics Corporation Integrated IGBT Driver, Optimized State Machine and Advanced Protection Features Visit Renesas Electronics Corporation
    2SK3480(0)-Z-E2-AZ Renesas Electronics Corporation Nch Single Power Mosfet 100V 50A 31Mohm Mp-25Z/To-220Smd Visit Renesas Electronics Corporation
    2SK3480(0)-Z-E1-AZ Renesas Electronics Corporation Nch Single Power Mosfet 100V 50A 31Mohm Mp-25Z/To-220Smd Visit Renesas Electronics Corporation
    10121510-480020ALF Amphenol Communications Solutions HPCE R/A Receptacle 48P20S Visit Amphenol Communications Solutions

    TRC 4800 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HM51

    Abstract: HM514800CJI-7 HM514800CJI-8 HM514800CLJI-7 HM514800CLJI-8 HM51S4800CJI-7
    Text: HM514800CI Series HM51S4800CI Series 524,288-word x 8-bit Dynamic Random Access Memory ADE-203-619A Z Rev. 1.0 Jul. 18, 1996 Description The Hitachi HM51(S)4800CI Series are CMOS dynamic RAM organized as 524,288-word × 8-bit. HM51(S)4800CI have realized higher density, higher performance and various functions by employing 0.8


    Original     		PDF HM514800CI HM51S4800CI 288-word ADE-203-619A 4800CI 4800CI 400-mil HM51 HM514800CJI-7 HM514800CJI-8 HM514800CLJI-7 HM514800CLJI-8 HM51S4800CJI-7

    HM514800CLZ7

    Abstract: 4800a HM514800CJ-8 HM51 HM514800AJ-7 HM514800AJ-8 hm514800alj7 HM514800CLZ-6 Hitachi DSA00182 HM514800CLZ-7
    Text: HM51 S 4800A/AL Series HM51(S)4800C/CL Series 524,288-word x 8-bit Dynamic Random Access Memory The Hitachi HM514800A/AL, HM514800C/CL are CMOS dynamic RAM organized as 524,288word x 8-bit. HM514800A/AL, HM514800C/CL have realized higher density, higher performance


    Original     		PDF 800A/AL 4800C/CL 288-word HM514800A/AL, HM514800C/CL 288word HM514800C/CL HM514800CLZ7 4800a HM514800CJ-8 HM51 HM514800AJ-7 HM514800AJ-8 hm514800alj7 HM514800CLZ-6 Hitachi DSA00182 HM514800CLZ-7

    E24526

    Abstract: IBM11M4730C4M
    Text: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM13N8739CC 8M x 72 2 Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module • 8Mx72 Synchronous DRAM DIMM • Performance: fCK CAS Latency Clock Frequency 10 Units 3 100 MHz tCK


    Original     		PDF IBM11M4730C4M E12/10, IBM13N8739CC 168-Pin 8Mx72 E24526

    GM71C4800CJ-60

    Abstract: GM71C GM71C4800CJ-70 GM71C4800C 28SOJ CL-70 S4800 GM71C4800CJ60
    Text: GM71C4800C GM71CS4800CL LG Semicon Co.,Ltd. 524,288WORDS x 8 BIT CMOS DYNAMIC RAM Description Features The GM71C4800C/CL is the new generation dynamic RAM organized 524,288 x 8 bit. GM71C4800C/CL has realized higher density, higher performance and various functions by utilizing


    Original     		PDF GM71C4800C GM71CS4800CL 288WORDS GM71C4800C/CL 28pin GM71C4800CJ-60 GM71C GM71C4800CJ-70 GM71C4800C 28SOJ CL-70 S4800 GM71C4800CJ60

    DDR200

    Abstract: DDR266 DDR333 DDR400 W3EG64128S-D3
    Text: W3EG64128S-D3 -JD3 White Electronic Designs ADVANCED* 1GB – 2x64Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG64128S is a 2x64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of sixteen 64Mx8 DDR


    Original     		PDF W3EG64128S-D3 2x64Mx64 W3EG64128S 512Mb 64Mx8 100MHz, 133MHz, 166MHz 200MHz DDR200 DDR266 DDR333 DDR400 W3EG64128S-D3

    Untitled

    Abstract: No abstract text available
    Text: W3EG64128S-D3 -JD3 White Electronic Designs ADVANCED* 1GB – 2x64Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG64128S is a 2x64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of sixteen 64Mx8 DDR


    Original     		PDF W3EG64128S-D3 2x64Mx64 W3EG64128S 512Mb 64Mx8 128Mx64 100MHz, 133MHz, 166MHz

    DDR200

    Abstract: DDR266 DDR333 DDR400 W3EG64128S-D3
    Text: W3EG64128S-D3 -JD3 White Electronic Designs ADVANCED* 1GB – 2x64Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG64128S is a 2x64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of sixteen 64Mx8 DDR


    Original     		PDF W3EG64128S-D3 2x64Mx64 W3EG64128S 512Mb 64Mx8 100MHz, 133MHz, 166MHz 200MHz DDR200 DDR266 DDR333 DDR400 W3EG64128S-D3

    Untitled

    Abstract: No abstract text available
    Text: W3EG64128S-D3 -JD3 White Electronic Designs ADVANCED* 1GB – 2x64Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG64128S is a 2x64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of sixteen 64Mx8 DDR


    Original     		PDF 2x64Mx64 100MHz, 133MHz, 166MHz 200MHz DDR200, DDR266, DDR333 DDR400 W3EG64128S-D3

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3EG64128S-D3 ADVANCED* 1GB – 2x64Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG64128S is a 2x64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of sixteen 64Mx8 DDR


    Original     		PDF 2x64Mx64 100MHz, 133MHz, 166MHz 200MHz DDR200, DDR266, DDR333 DDR400 W3EG64128S-D3

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3EG64128S-D3 ADVANCED* 1GB-2x64Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG64128S is a 2x64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of sixteen 64Mx8 DDR


    Original     		PDF W3EG64128S-D3 1GB-2x64Mx64 W3EG64128S 2x64Mx64 512Mb 64Mx8 100MHz, 133MHz, 166MHz 200MHz

    Untitled

    Abstract: No abstract text available
    Text: W3EG64128S-D3 -JD3 White Electronic Designs ADVANCED* 1GB – 2x64Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG64128S is a 2x64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of sixteen 64Mx8 DDR


    Original     		PDF W3EG64128S-D3 2x64Mx64 W3EG64128S 512Mb 64Mx8 100MHz, 133MHz, 166MHz 200MHz

    dry contact relay 220V

    Abstract: trip coil TRC 4800 RK279 protective relay RXZ21 AUXILIARY CONTACT RELAY
    Text: A C ET A INFORMATION Into-No. RK 279-300 E Froinrt?sli Reg. E'FR, September 1977 Edition 2 Relay Division Page 5634 1 File RK 00-90 Section 2 Supervision relay' i-ype TRC 4800 Type TRC 4800 supervises continuously the trip circuits of a circuit breaker and will give alarm fori


    OCR Scan     		PDF 001-AA. dry contact relay 220V trip coil TRC 4800 RK279 protective relay RXZ21 AUXILIARY CONTACT RELAY

    ABB CIRCUIT BREAKER

    Abstract: B03-9175E B03-8360E trc 4800 4800 application circuit abb 220V DC relay abb 40 relay trip coil 220v ac circuit breaker BROWN BOVERI max current relay
    Text: V Ék II 91 /M l» Type TRC 4800 B03-8360E Trip-circuit monitoring relay Page 1 October 1986 Changed since January 1985 Data subject to change without notic ASEA BROWN BOVERI ABB Relays Abstract *s Monitors auxiliary operate contacts Monitors the whole trip-circuit indepen­


    OCR Scan     		PDF B03-8360E B03-9175E B03-9382E S-721 ABB CIRCUIT BREAKER trc 4800 4800 application circuit abb 220V DC relay abb 40 relay trip coil 220v ac circuit breaker BROWN BOVERI max current relay

    Untitled

    Abstract: No abstract text available
    Text: GM71C S 4800C GM71CS4800CL LG Semicon Co.,Ltd. 524.288W O R D S x 8 B IT C M O S D Y N A M IC R A M Description Features T he G M 71C (S )4800C /C L is the new generation dynam ic RAM o rganized 524,288 x 8 bit. G M 71C (S )4800C /C L has realized h igher density,


    OCR Scan     		PDF 4800C 28pin GM71C GM71CS4800CL

    S4800L

    Abstract: nec 424800 zx3A PD42S4800 tda 1006 D424800
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT //PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The iiP042S 4800, 424800 are 524,288 words by 8 bits CMOS dynamic RAM s. The fast page mode capability realize high speed access and low power consumption.


    OCR Scan     		PDF uPD42S4800 uPD424800 iiP042S fiPD42S4800 28-pin PD42S4800-60, jPD42S4800-7Q, PD42S4800-80. PD42S4800-10, S4800L nec 424800 zx3A PD42S4800 tda 1006 D424800

    Untitled

    Abstract: No abstract text available
    Text: HM514800C Series HM51S4800C Series 524,288-word x 8-bit Dynamic Random Access Memory HITACHI Description The Hitachi HM51 S 4800C are CMOS dynamic RAM organized as 524,288-word x 8-bit. HM51(S)4800C have realized higher density, higher performance and various functions by employing 0.8 (am CMOS process


    OCR Scan     		PDF HM514800C HM51S4800C 288-word 4800C 400-m 28-pin

    HM514800CLJ8

    Abstract: No abstract text available
    Text: HM514800C Series HM51S4800C Series 524,288-word x 8-bit Dynamic Random Access Memory HITACHI Description The Hitachi HM51 S 4800C are CMOS dynamic RAM organized as 524,288-word x 8-bit. HM51(S)4800C have realized higher density, higher performance and various functions by employing 0.8 (Am CMOS process


    OCR Scan     		PDF HM514800C HM51S4800C 288-word 4800C 400-mil 28-pin HM514800CLJ8

    Untitled

    Abstract: No abstract text available
    Text: H M 5 1 W 4 8 0 0 A /A L Preliminary S e r ie s 52 4,28 8-w o rd X 8-b it D y n a m ic R and o m A c ce ss M em ory T he H ita c h i H M 5 1 W 4 8 0 0 A /A L a re C M O S dynamic RAM organized as 524,288-word x 8-bit. HM 51W 4800A/AL have realized higher density,


    OCR Scan     		PDF 288-word 800A/AL 400-mil 28-pin Q02bb70

    Untitled

    Abstract: No abstract text available
    Text: IBM13N2649JC IBM13N2739JC 2M x 64/72 1 B ank U nbuffered S D R A M M odule Features 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module 2Mx64/72 Synchronous DRAM DIMM Performance: 10 CAS Latency Units 3 jf c K I Clock j t CK Clock Cycle Frequency


    OCR Scan     		PDF IBM13N2649JC IBM13N2739JC 2Mx64/72

    Untitled

    Abstract: No abstract text available
    Text: HM514800D Series HM51S4800D Series 524,288-word x 8-bit Dynamic RAM HITACHI ADE-203-687 Z Preliminaiy Rev. 0.0 Dec. 3, 1996 Description The Hitachi HM51(S)4800D are CMOS dynamic RAM organized as 524,288-word x 8-bit. HM51(S)4800D have realized higher density, higher performance and various functions by employing 0.8


    OCR Scan     		PDF HM514800D HM51S4800D 288-word ADE-203-687 4800D 400-mil 28-pin

    IC SRAM 64K X 4

    Abstract: No abstract text available
    Text: SHARR LH52255 64K x 4 CMOS Static RAM Data Sheet Features Functional Description The LH52255 is a high speed 262,144 bit static RAM organized as 64K x 4. A fast, efficient design is obtained with a CMOS periphery and a matrix constructed with polysilicon load memory


    OCR Scan     		PDF LH52255 SMT88003C IC SRAM 64K X 4

    Untitled

    Abstract: No abstract text available
    Text: GM71C4800C GM71CS4800CL LG S em icon Co.,Ltd. 524,288WORDS x 8 BIT CMOS DYNAMIC RAM Description Features The GM71C4800C/CL is the new generation dynamic RAM organized 524,288 x 8 bit. GM71C4800C/CL has realized higher density, higher performance and various functions by utilizing


    OCR Scan     		PDF GM71C4800C/CL 28pin 288WORDS GM71C4800C GM71CS4800CL

    64K X 4 SRAM

    Abstract: No abstract text available
    Text: LH52255 SHARR 64K x 4 CMOS Static RAM Data Sheet Features Functional Description The LH52255 is a high speed 262,144 bit static RAM organized as 64K x 4. A fast, efficient design is obtained with a CMOS periphery and a matrix constructed with polysilicon load memory


    OCR Scan     		PDF LH52255 LH52255 SMT88003C 64K X 4 SRAM

    Untitled

    Abstract: No abstract text available
    Text: 5 1 2K X 8 Integrated Device Technology, Inc. PRELIMINARY C M O S STATIC R A M M O D U LE nJEZSJoS FEATURES: DESCRIPTION: • High density 4 megabit 512K x 8 static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs


    OCR Scan     		PDF 110mA 32-pin, 4048/7M B4048 200mV IDT7IM048, IDT7MB4048