TSHA440 Search Results

ss 7941

Abstract: TSHA4400
Contextual Info: Tem ic TSHA440. S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 0 3 mm T -l Package Description The TSHA44.series are high efficiency infrared ermitting diodes in GaAlAs on GaAlAs technology, molde;d in a clear, untinted plastic package.

TSHA440

Abstract: TSHA4400 TSHA4401
Contextual Info: TSHA440. Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about

Contextual Info: TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • 94 8636 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 875 nm High reliability

Contextual Info: TSHA440. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 3 mm T-1 Package Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about

TSHA4400

Abstract: TSHA440 TSHA4401 LP880
Contextual Info: TSHA440. Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ø 3 mm T–1 Package Description 94 8398 The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs

"IR Emitter"

Abstract: TSTS7503 TSTS7101 30016
Contextual Info: Temic Semiconductors Characteristics +/-< » Ie / mW/sr i& t,-*tf / ns Package Ip/mA Type High-Performance IR Emitter GaAlAs (870 nm in Plastic Package TSHA4400 30016) 40025) TSHA5200 TSHA52ÜJ 50030) 12° TSHA5202 . . . . 60036) 300 TSHA5203 - Ip/m A 20(>12)

TSHA4400

Abstract: TSHA4401 TSHA440
Contextual Info: TSHA440. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 3 mm T–1 Package Description 94 8398 The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs

Contextual Info: TSHA440. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 3 mm T-1 Package Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about

TSHA4401

Abstract: TSHA440 TSHA4400
Contextual Info: TSHA4400, TSHA4401 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 20°

TSHA440

Abstract: TSHA4400 TSHA4401
Contextual Info: TSHA440. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

TSHA440

Abstract: TSHA4400 TSHA4401
Contextual Info: TSHA440. GaAlAs Infrared Emitting Diodes in ø 3 mm T–1 Package Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 50 %

Contextual Info: TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • 94 8636 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 875 nm High reliability

Contextual Info: TSHA440. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

TSHA440

Abstract: TSHA4400 TSHA4401
Contextual Info: TSHA4400, TSHA4401 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 20°

TSHA440

Contextual Info: TSHA440. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 3 mm T-1 Package Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about

Contextual Info: TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • 94 8636 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: p = 875 nm High reliability

Contextual Info: TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • 94 8636 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 875 nm High reliability

TSHA440

Abstract: TSHA4400 TSHA4401
Contextual Info: TSHA440. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 3 mm T–1 Package Description 94 8398 The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs

Contextual Info: T em ic TSHA440. S e m i c o n d u c t o r s GaAlAs Infrared Emitting Diodes in 0 3 mm T -l Package Description T h e T S H A 4 4 .s e r i e s a r e h ig h e f f i c ie n c y in f r a r e d e m itt in g d io d e s in G a A I A s o n G a A I A s te c h n o lo g y , m o ld e d in a

TSHA440

Abstract: TSHA4400 TSHA4401
Contextual Info: TSHA440. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

CQX48B

Abstract: TLH04400 TLRG542
Contextual Info: V I^ ^ Y Vishay Telefunken Table of Virtual Source Sizes Part Nunber Virtual Source Size mm Part Nunber Virtual Source Size (mm) Part Nunber Virtual Source Size (mm) TLBR5410 3.6 TLHP5800 3.7 TLLY5401 3.7 TLDR4400 2.1 TLHR4200 1.5 TLMA3100 1.8 TLDR4900 2

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

Infrared emitter

Abstract: "Photo Interrupter" TSAL4400 "Photo Interrupter" Application Note APPLICATION CIRCUIT OF TSAL4400 smd diode DH TSHA4400 TSKS5400 TSMF3700 TSML3710
Contextual Info: VISHAY Vishay Semiconductors Aging of Infrared Emitter Components Typical degradation of radiant power after 4000 h operation Relative Radiant Power Introduction Over its lifetime, an infrared emitter gradually loses its radiant power. This type of aging or degradation has

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455