TSHA650 Search Results
TSHA650 Price and Stock
Vishay Semiconductors TSHA6500EMITTER IR 875NM 100MA RADIAL |
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TSHA6500 | Bulk |
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Others TSHA6502AVAILABLE EU |
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TSHA6502 | 104,250 |
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Vishay Intertechnologies TSHA6500870 NM, GAALAS DOUBLE HETERO HIGH SPEED INFRARED EMITTING DIODE Infrared LED, 5mm, 1-Element, 875nm |
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TSHA6500 | 12,000 |
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tfk TSHA6501870 NM, GAALAS DOUBLE HETERO HIGH SPEED INFRARED EMITTING DIODE Infrared LED, 5mm, 1-Element, 875nm |
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TSHA6501 | 12,000 |
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Vishay Intertechnologies TSHA6503/T1 3/4INSTOCK |
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TSHA6503/T1 3/4 | 3,218 |
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TSHA650 Datasheets (7)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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TSHA650. | Vishay Siliconix | GaAlAs Infrared Emitting Diodes in 5 mm (T-1 3/4)Package | Original | 89.16KB | 6 | |||
TSHA650 | Vishay Telefunken | GaAlAs Infrared Emitting Diodes in f 5 mm (T-13/4) Package | Original | 89.16KB | 6 | |||
TSHA6500 | Vishay Semiconductors | Infrared, UV, Visible Emitters, Optoelectronics, IR EMITTER HIGH EFF. 870NM 5MM 2 | Original | 5 | ||||
TSHA6500 | Vishay Telefunken | GaAlAs Infrared Emitting Diodes in Deg 5 mm (T-1 3-4) Package | Original | 89.16KB | 6 | |||
TSHA6501 | Vishay Telefunken | GaAlAs Infrared Emitting Diodes in Deg 5 mm (T-1 3-4) Package | Original | 89.16KB | 6 | |||
TSHA6502 | Vishay Telefunken | GaAlAs Infrared Emitting Diodes in Deg 5 mm (T-1 3-4) Package | Original | 89.16KB | 6 | |||
TSHA6503 | Vishay Telefunken | GaAlAs Infrared Emitting Diodes in Deg 5 mm (T-1 3-4) Package | Original | 89.16KB | 6 |
TSHA650 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TSHA650. Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about |
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TSHA650. TSHA550. 18-Jul-08 | |
TSHA6500Contextual Info: TSHA6500 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24° • Low forward voltage |
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TSHA6500 2002/95/EC 2002/96/EC TSHA6500 18-Jul-08 | |
TSHA550
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503
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TSHA650. TSHA550. D-74025 20-May-99 TSHA550 TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503 | |
TSHA550
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503
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TSHA650. TSHA550. D-74025 20-May-99 TSHA550 TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503 | |
TSHA550
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503
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TSHA650. TSHA550. D-74025 20-May-99 TSHA550 TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503 | |
Contextual Info: TSHA650. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. |
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TSHA650. TSHA550. D-74025 11-May-04 | |
TSHA6501
Abstract: TSHA6503 TSHA6500
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TSHA6500, TSHA6501, TSHA6502, TSHA6503 2002/95/EC 2002/96/EC TSHA650. 18-Jul-08 TSHA6501 TSHA6503 TSHA6500 | |
Contextual Info: TSHA6500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 875 nm • High reliability • Angle of half intensity: = ± 24° |
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TSHA6500 2002/96/EC 200/95/EC TSHA6500 11-Mar-11 | |
Contextual Info: TSHA6500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 875 nm • High reliability • Angle of half intensity: = ± 24° |
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TSHA6500 2002/96/EC 200/95/EC TSHA6500 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
TSHA550
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503
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TSHA650. TSHA550. D-74025 20-May-99 TSHA550 TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503 | |
Contextual Info: TSHA6500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 875 nm • High reliability • Angle of half intensity: = ± 24° |
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TSHA6500 2002/96/EC 200/95/EC TSHA6500 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: TSHA650. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm T–1¾ Package Description 94 8389 The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs |
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TSHA650. TSHA550. D-74025 20-May-99 | |
Contextual Info: TSHA650. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 5 mm T-1¾ Package Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about |
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TSHA650. TSHA550. D-74025 08-Apr-04 | |
TSHA550
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503
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TSHA650. TSHA550. 08-Apr-05 TSHA550 TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503 | |
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TSHA6503
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502
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TSHA6500, TSHA6501, TSHA6502, TSHA6503 2002/95/EC 2002/96/EC TSHA650. 18-Jul-08 TSHA6503 TSHA650 TSHA6500 TSHA6501 TSHA6502 | |
Contextual Info: TSHA650. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 5 mm T-1¾ Package Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about |
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TSHA650. TSHA550. D-74025 11-May-04 | |
Contextual Info: TSHA650. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 5 mm T-1¾ Package Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about |
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TSHA650. TSHA550. D-74025 11-May-04 | |
A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
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90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3 | |
CQX48B
Abstract: IR Emitters "IR Emitters"
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CQY36N CQY37N TSUS4400 CQX48B TSSS2600 TSUS5200 TSUS5201 TSUS5202 TSUS5400 TSUS5401 IR Emitters "IR Emitters" | |
ic 8746Contextual Info: Tem ic TSHA 650 Semiconductors GaAlAs Infrared Emitting Diodes in 05 mm T -l3/4 Package Description The TSHA 650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, m olded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature aboiit 70 % |
OCR Scan |
TSHA550. D-74025 15-Jul-96 ic 8746 | |
tept5600 response time
Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
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emit4-9337-2920 VSA-SG0041-0512 tept5600 response time Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000 | |
Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
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vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s | |
TSHA550
Abstract: TSHA6500 TSHA6501 TSHA6502 TSHA6503 phototransistor
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TSHA550. D-74025 15-Jul-96 TSHA550 TSHA6500 TSHA6501 TSHA6502 TSHA6503 phototransistor | |
diode SR 360
Abstract: IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
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11-Sep-08 diode SR 360 IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet |