TSHA6500 Search Results
TSHA6500 Price and Stock
Vishay Semiconductors TSHA6500EMITTER IR 875NM 100MA RADIAL |
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TSHA6500 | Bulk |
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Vishay Intertechnologies TSHA6500870 NM, GAALAS DOUBLE HETERO HIGH SPEED INFRARED EMITTING DIODE Infrared LED, 5mm, 1-Element, 875nm |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSHA6500 | 12,000 |
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TSHA6500 | 143 Weeks | 1 |
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TSHA6500 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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TSHA6500 | Vishay Semiconductors | Infrared, UV, Visible Emitters, Optoelectronics, IR EMITTER HIGH EFF. 870NM 5MM 2 | Original | |||
TSHA6500 | Vishay Telefunken | GaAlAs Infrared Emitting Diodes in Deg 5 mm (T-1 3-4) Package | Original |
TSHA6500 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TSHA6500Contextual Info: TSHA6500 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24° • Low forward voltage |
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TSHA6500 2002/95/EC 2002/96/EC TSHA6500 18-Jul-08 | |
TSHA6501
Abstract: TSHA6503 TSHA6500
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TSHA6500, TSHA6501, TSHA6502, TSHA6503 2002/95/EC 2002/96/EC TSHA650. 18-Jul-08 TSHA6501 TSHA6503 TSHA6500 | |
Contextual Info: TSHA6500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 875 nm • High reliability • Angle of half intensity: = ± 24° |
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TSHA6500 2002/96/EC 200/95/EC TSHA6500 11-Mar-11 | |
Contextual Info: TSHA6500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 875 nm • High reliability • Angle of half intensity: = ± 24° |
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TSHA6500 2002/96/EC 200/95/EC TSHA6500 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: TSHA6500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 875 nm • High reliability • Angle of half intensity: = ± 24° |
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TSHA6500 2002/96/EC 200/95/EC TSHA6500 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
TSHA6503
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502
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TSHA6500, TSHA6501, TSHA6502, TSHA6503 2002/95/EC 2002/96/EC TSHA650. 18-Jul-08 TSHA6503 TSHA650 TSHA6500 TSHA6501 TSHA6502 | |
Contextual Info: TSHA650. Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about |
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TSHA650. TSHA550. 18-Jul-08 | |
TSHA550
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503
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TSHA650. TSHA550. D-74025 20-May-99 TSHA550 TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503 | |
A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
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90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3 | |
TSHA550
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503
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TSHA650. TSHA550. D-74025 20-May-99 TSHA550 TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503 | |
TSHA550
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503
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TSHA650. TSHA550. D-74025 20-May-99 TSHA550 TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503 | |
Contextual Info: TSHA650. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. |
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TSHA650. TSHA550. D-74025 11-May-04 | |
CQX48B
Abstract: IR Emitters "IR Emitters"
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CQY36N CQY37N TSUS4400 CQX48B TSSS2600 TSUS5200 TSUS5201 TSUS5202 TSUS5400 TSUS5401 IR Emitters "IR Emitters" | |
ic 8746Contextual Info: Tem ic TSHA 650 Semiconductors GaAlAs Infrared Emitting Diodes in 05 mm T -l3/4 Package Description The TSHA 650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, m olded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature aboiit 70 % |
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TSHA550. D-74025 15-Jul-96 ic 8746 | |
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TSHA550
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503
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TSHA650. TSHA550. D-74025 20-May-99 TSHA550 TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503 | |
TSHA550
Abstract: TSHA6500 TSHA6501 TSHA6502 TSHA6503 phototransistor
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TSHA550. D-74025 15-Jul-96 TSHA550 TSHA6500 TSHA6501 TSHA6502 TSHA6503 phototransistor | |
diode SR 360
Abstract: IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
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11-Sep-08 diode SR 360 IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet | |
TSUS3400
Abstract: VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01
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VMN-SG2123-1010 TSUS3400 VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01 | |
APPLICATION CIRCUIT OF TSAL4400
Abstract: TSAL6400 TSAL6100 TSHF5200 TSTS7102 CQX48B CQY36N CQY37N tsta7500 TSAL4400
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conta80089 TSHF5400 TSMF1000 TSMF3700 TSMS3700 TSML1000 TSML3700 TSPF5400 TSSF4500 TSSP4400 APPLICATION CIRCUIT OF TSAL4400 TSAL6400 TSAL6100 TSHF5200 TSTS7102 CQX48B CQY36N CQY37N tsta7500 TSAL4400 | |
led 7 segment anode TIL 702
Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
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10x10 led 7 segment anode TIL 702 trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150 | |
A 69157 scr
Abstract: HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41
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74K5145 74K5144 74K5146 74K5147 74K5166 74K5170 71K0256 71K0273 71K0255 71K0272 A 69157 scr HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41 | |
Contextual Info: TEMIC TSHA 650. S e m i c o n d u c t o r s Ga Al As Infrared Emitting Diodes in 05 mm T -l 3A Package Description The TSHA 650. series are high efficiency infrared emit ting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. |
OCR Scan |
TSHA550. D-74025 15-Jul-96 | |
Contextual Info: TSHA650. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm T–1¾ Package Description 94 8389 The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs |
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TSHA650. TSHA550. D-74025 20-May-99 | |
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors Reflective Sensors – Analog Tr a n s m i s s i v e S e n s o r s – A n a l o g |
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VCNL4020X01 VCNL3020 AEC-Q101 VCNL4010 VCNL4020 VMN-SG2123-1502 |