TSM60N900CH Search Results
TSM60N900CH Price and Stock
Taiwan Semiconductor TSM60N900CH-C5GMOSFET N-CH 600V 4.5A TO251 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSM60N900CH-C5G | Tube | 15,000 |
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Taiwan Semiconductor TSM60N900CH C5GTransistor: N-MOSFET; unipolar; 600V; 4.5A; 50W; IPAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSM60N900CH C5G | 1 |
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TSM60N900CH Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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| TSM60N900CH C5G |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 4.5A TO251 | Original | 917.37KB |
TSM60N900CH Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology |
Original |
TSM60N900 ITO-220 O-251 O-252 TSM60N900CI 50pcs TSM60N900CH 75pcs | |
TSM60N900CPContextual Info: TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology |
Original |
TSM60N900 ITO-220 O-251 O-252 TSM60N900CI 50pcs TSM60N900CH 75pcs TSM60N900CP |