TSOP 138 Search Results

M312L5623MTS

Abstract: TSOP 173 g M312L5620MTS-CB3 m312l5623mts-cb3
Contextual Info: 2GB TSOP Registered DIMM Preliminary DDR SDRAM DDR SDRAM Registered Module TSOP-II 184pin Registered Module based on 1Gb M-die with 1,200mil Height & 72-bit ECC Revision 0.0 February 2004 Revison 0.0 February, 2004 2GB TSOP Registered DIMM Preliminary

Contextual Info: 512MB, 1GB, 2GB TSOP Registered DIMM DDR SDRAM DDR SDRAM Registered Module TSOP-II 184pin Registered Module based on 512Mb B-die with 1,700 / 1,200mil Height & 72-bit ECC Revision 1.0 December. 2003 Revison 1.0 December, 2003 512MB, 1GB, 2GB TSOP Registered DIMM

PC133 registered reference design

Contextual Info: Shrink-TSOP KMM390S6520BN Preliminary PC133 Registered DIMM Revision History Revision 0.0 July 29. 1999, Preliminary - First generation of datasheet. REV. 0.0 July. 1999 Shrink-TSOP KMM390S6520BN Preliminary PC133 Registered DIMM KMM390S6520BN SDRAM DIMM

Contextual Info: CIC-40TS-40D-F6-YAM-S 40-Lead TSOP to a 40-Pin DIP 7/97 EXAMPLES TSOP DEVICES: PIN CONFIGURATION: E28F004B3 E28F008B3 E28F016B3 SOCKET: BASE 40-Pin DIP PIN NAMES SOCKET 40-Lead TSOP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27

Contextual Info: CIC-40TS-40D-F6-YAM-S 40-Lead TSOP to a 40-Pin DIP 9/97 EXAMPLES TSOP DEVICES: PIN CONFIGURATION: E28F004B3 E28F008B3 E28F016B3 SOCKET: BASE 40-Pin DIP PIN NAMES SOCKET 40-Lead TSOP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27

Contextual Info: Shrink-TSOP KMM377S6520BN Preliminary 512MB Registered DIMM 512MB Registered DIMM based on 128Mb SDRAM sTSOP2 Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 Shrink-TSOP KMM377S6520BN

Contextual Info: Shrink-TSOP KMM464S3323BN Preliminary 144pin SDRAM SODIMM 256MB SDRAM SODIMM based on 128Mb SDRAM sTSOP Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 Shrink-TSOP KMM464S3323BN

Contextual Info: 1C 235 SERIES tsop •Applicable 1C Dimensions FEATURES • Open top type sockets for TSOP packages. • Unique, compact design ensures high-density mounting of burn-in inboards. • Unique contact design ensures outstanding contact reliability especially in monitored burn-in operations.

Contextual Info: White Electronic Designs W3DG6435V-AD1 256MB – 32Mx64 SDRAM UNBUFFERED FEATURES DESCRIPTION PC100 and PC133 compatible The W3DG6435V is a 32Mx64 synchronous DRAM module which consists of eight 32Mx8 SDRAM components in TSOP II package, and one 2Kb EEPROM in an 8 pin TSOP

k4h510438b

Contextual Info: 512MB, 1GB, 2GB TSOP Registered DIMM Pb-Free DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 512Mb B-die with 1,700 / 1,200mil Height & 72-bit ECC 66 TSOP II with Pb-Free (RoHS compliant) Revision 1.2 Oct. 2004 Revison 1.2 Oct. 2004

Contextual Info: CIC-40TS-40D-B6-YAM-S REV 2 40-Lead TSOP to a 40-Pin DIP 7/97 (EXAMPLES) TSOP DEVICES: PIN CONFIGURATION: BASE 40-Pin DIP E28F002BC / BL / BV / BX E28F004BE / BL / BV / BX E28F008BE / BV (TE extended temp range) SOCKET: Yamaichi IC191-0402-002N PRICING:

WED3DG6435V-D1

Contextual Info: WED3DG6435V-D1 -JD1 White Electronic Designs 256MB – 32Mx64 SDRAM UNBUFFERED FEATURES DESCRIPTION The WED3DG6435V is a 32Mx64 synchronous DRAM module which consists of eight 32Mx8 SDRAM components in TSOP II package, and one 2Kb EEPROM in an 8 pin TSOP package for Serial Presence Detect which

Contextual Info: 184pin Registered DDR SDRAM DIMMs based on 512Mb C ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb C ver. based Registered DIMM series provide

HYMD564M646C

Abstract: d431 DDR266 DDR266B DDR333 DDR400 DDR400B HYMD532M646C hynix ddr hynix ddr sdram
Contextual Info: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered

TSOP 48 pin flash gbit

Abstract: JS28F00AP33BF 1FFC000
Contextual Info: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features  High performance:  TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer

Contextual Info: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered

Contextual Info: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered

Contextual Info: 184pin Registered DDR SDRAM DIMMs based on 512Mb B ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DIMM series provide

Contextual Info: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered

CIC-40TS-40D-B6-YAM-S

Abstract: E28F008BE
Contextual Info: CIC-40TS-40D-B6-YAM-S REV 2 40-Lead TSOP to a 40-Pin DIP Mar-98 (EXAMPLES) TSOP DEVICES: PIN CONFIGURATION: BASE 40-Pin DIP E28F002BC / BL / BV / BX E28F004BE / BL / BV / BX / B5 E28F008BE / BV / B5 (TE extended temp range) SOCKET: Yamaichi IC191-0402-002N

D431

Abstract: DDR266 DDR266B DDR333 DDR400 DDR400B hynix module suffix DDR333 production drawing
Contextual Info: 200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb B ver. based unbuffered

DDR200

Abstract: DDR266 DDR266A DDR266B DDR333 hynix module suffix
Contextual Info: 184pin Registered DDR SDRAM DIMMs based on 512Mb B ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DIMM series provide

HYMD264646D8J-D43

Abstract: HYMD232646D8J-D43 hynix HYMD264646D8J-D43 DDR266 DDR266A DDR266B DDR333 DDR400 DDR400B 256mb ddr333 200 pin
Contextual Info: 184pin Unbuffered DDR SDRAM DIMMs based on 256Mb D ver. TSOP This Hynix unbuffered Dual In-Line Memory Module (DIMM) series consists of 256Mb D ver. DDR SDRAMs in 400 mil TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 256Mb D ver. based unbuffered DIMM series provide

pc28f00ap33

Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
Contextual Info: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: „ TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer