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    TSOP 48 PACKAGE NAND MEMORY Search Results

    TSOP 48 PACKAGE NAND MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TSOP 48 PACKAGE NAND MEMORY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT29F128G08AJAAAWP

    Abstract: MT29F128G08AJAAA MT29F128G08A MT29F128G08
    Text: Specifications Data Sheets Density: 128Gb ~ Datasheet: 3216411281256Gb Async/Sync NAND M 73Al Q Status: Production Rev. Date: 0412012, File Size: 3.25 MB RoHS: Yes Wi<nh: x8 vonage: 3.3V Package: TSOP Pin Count: 48-pin B~siCell: SLC MTi s: 110: Common Op Temp: octo •70C


    Original     		PDF 128Gb 3216411281256Gb 48-pin MT29F128G08AJAAAWP MT29F128G08AJAAAWPES MT29F128G08AJAAA MT29F128G08A MT29F128G08

    toshiba nand tc58

    Abstract: TOSHIBA TC58 TOSHIBA TC58 cmos memory -NAND toshiba nand flash ST NAND TOSHIBA part numbering Toshiba NAND diode m7 toshiba samsung tc58 WSOP48
    Text: AN1839 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Toshiba Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Toshiba memory, in a application initially designed for a Toshiba device.


    Original     		PDF AN1839 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits toshiba nand tc58 TOSHIBA TC58 TOSHIBA TC58 cmos memory -NAND toshiba nand flash ST NAND TOSHIBA part numbering Toshiba NAND diode m7 toshiba samsung tc58 WSOP48

    toshiba nand tc58

    Abstract: toshiba Nand flash toshiba Nand part numbering tc58 flash samsung tc58 Toshiba NAND TOSHIBA TC58 cmos memory -NAND NAND256-A TOSHIBA part numbering VFBGA63
    Text: AN1839 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Toshiba Device This Application Note describes how to use an STMicroelectronics Small Page 528 Byte/ 264 Word Page NAND Flash memory, to replace an equivalent Toshiba memory, in a application initially designed for a


    Original     		PDF AN1839 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits toshiba nand tc58 toshiba Nand flash toshiba Nand part numbering tc58 flash samsung tc58 Toshiba NAND TOSHIBA TC58 cmos memory -NAND NAND256-A TOSHIBA part numbering VFBGA63

    MT29F2G16A

    Abstract: micron marking code information MT29 NAND Micron MT29F2G08A micron ecc nand TSOP 44 Package nand memory TSOP 48 Package nand memory MT29Fxx08x
    Text: 2Gb x16/x8, NAND Flash Memory Features NAND Flash Memory MT29F2G08AAxxx / MT29F2G16AAxxx This document provides a high-level overview of the Micron 2Gb NAND device. To obtain product data sheets or technical notes, please contact your Micron sales person, or visit: www.micron.com/sales


    Original     		PDF x16/x8, MT29F2G08AAxxx MT29F2G16AAxxx 2Gb2048 09005aef817bd2fe/Source: 09005aef817bd429 MT29F2G16A micron marking code information MT29 NAND Micron MT29F2G08A micron ecc nand TSOP 44 Package nand memory TSOP 48 Package nand memory MT29Fxx08x

    KS32P6632

    Abstract: NAND FLASH 64MB sample code read and write flash memory PCMCIA FLASH CARD 10MB TSOP 14X20 lexar cf 64mb controller Datasheet toshiba NAND Flash MLC vending machine source code pcmcia flash memory 8MB ata VG365
    Text: Mass Storage Application Memory Product & Technology Division 2000.03.15 Product Planning & Application Engineering The Leader in Memory Technology ELECTRONICS Mass MassStorage StorageApplication ApplicationArea Area Flash Card Small Form Factor Card PCMCIA Card Form Factor


    Original     		PDF 056KB KS32P6632 NAND FLASH 64MB sample code read and write flash memory PCMCIA FLASH CARD 10MB TSOP 14X20 lexar cf 64mb controller Datasheet toshiba NAND Flash MLC vending machine source code pcmcia flash memory 8MB ata VG365

    TH58NVG2S3

    Abstract: TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits AFT 181 TC58FVM6T2AFT65 TC58*VG*02 AFT-70L
    Text: 2004-2 PRODUCT GUIDE MOS Memory semiconductor 2004 http://www.semicon.toshiba.co.jp/eng 1. Selection Guide DRAM Dynamic RAMs Network FCRAMTM (DDR FCRAM) 200 MHz (400 Mbps) 182 MHz (364 Mbps) 167 MHz (334 Mbps) 32M x 8 TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60


    Original     		PDF TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60 TC59LM814CFT-50 TC59LM814CFT-55 TC59LM814CFT-60 TC59LM818DMB-30 TC59LM818DMB-33 TC59LM818DMB-40 TC59LM836DMB-30 TH58NVG2S3 TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits AFT 181 TC58FVM6T2AFT65 TC58*VG*02 AFT-70L

    electronique package

    Abstract: electronique cdx3 fujitsu Flash Memory Miniature Card AMD PCMCIA linear Flash Memory Card 2M - FLASH PCMCIA linear card MB98A81183-15 1M - FLASH PCMCIA linear card PCMCIA SRAM Memory Card 512k 5v eeprom Memory 32Mbit
    Text: FLASH OVERVIEW 16 18/9/98 4:12 pm Page 1 PRODUCT OVERVIEW FLASH MEMORY Fujitsu Flash Memories The Complete Package FLASH OVERVIEW 16 18/9/98 4:12 pm Page 2 Flash Memory Copyright 1998 Fujitsu Limited Tokyo, Japan, Fujitsu Mikroelektronik GmbH, Fujitsu Microelectronics Ltd and Fujitsu


    Original     		PDF D-85737 S-19268 FEDE-FLASH-0998 electronique package electronique cdx3 fujitsu Flash Memory Miniature Card AMD PCMCIA linear Flash Memory Card 2M - FLASH PCMCIA linear card MB98A81183-15 1M - FLASH PCMCIA linear card PCMCIA SRAM Memory Card 512k 5v eeprom Memory 32Mbit

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original     		PDF 64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP

    48-Pin TSOP - Type 1, CPL

    Abstract: SpecTek flash micron nand flash chip 16gb SpecTek nand nand flash 32gb x16 spectek nand flash 8GB-16GB BA12 L41A Micron NAND flash 32gb
    Text: Advance‡ 8Gb, 16Gb, and 32Gb: x8/x16 NAND Flash Memory Features NAND Flash Memory MLC FNNL41A Features Figure 1: 48-Pin TSOP Type 1 • Organization – Page size: x8: 2,112 bytes 2,048 + 64 bytes Block size: 128 pages (256K + 8K bytes) – Device size: 8Gb: 4,096 blocks


    Original     		PDF x8/x16 FNNL41A 48-Pin 48-Pin TSOP - Type 1, CPL SpecTek flash micron nand flash chip 16gb SpecTek nand nand flash 32gb x16 spectek nand flash 8GB-16GB BA12 L41A Micron NAND flash 32gb

    Micron MT29F8G08

    Abstract: MT29F4G16BABWP Micron NAND MT29F4G16 FLASH MEMORY 29F MICRON 63 MT29FxG08 MT29F2G16AABWP nand 29F MT29F2G08AABWP
    Text: 2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory Features NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features Figure 1: • Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words)


    Original     		PDF x8/x16 MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP 09005aef818a56a7 09005aef81590bdd Micron MT29F8G08 MT29F4G16BABWP Micron NAND MT29F4G16 FLASH MEMORY 29F MICRON 63 MT29FxG08 MT29F2G16AABWP nand 29F MT29F2G08AABWP

    48-Pin TSOP - Type 1, CPL

    Abstract: SpecTek flash SpecTek nand nand flash 32gb x16 SpecTek nand 8 flash chip 8gb Micron NAND flash 32gb L41A nand BA12 FNNL41A
    Text: Advance‡ 8Gb, 16Gb, and 32Gb: x8/x16 NAND Flash Memory Features NAND Flash Memory MLC FNNL41A Features Figure 1: 48-Pin TSOP Type 1 • Organization – Page size: x8: 2,112 bytes 2,048 + 64 bytes Block size: 128 pages (256K + 8K bytes) – Device size: 8Gb: 4,096 blocks


    Original     		PDF x8/x16 FNNL41A 48-Pin 09005aef82b4174b/PDF: 09005aef82af83db 48-Pin TSOP - Type 1, CPL SpecTek flash SpecTek nand nand flash 32gb x16 SpecTek nand 8 flash chip 8gb Micron NAND flash 32gb L41A nand BA12 FNNL41A

    SpecTek flash

    Abstract: Micron 512MB nand FLASH SpecTek nand spectek nand flash M2 8gb pinout SpecTek nand 8 M29A 48-PIN 04/SpecTek flash flash chip 8gb
    Text: 512Mb through 8Gb x8/x16 Multiplex NAND Flash Memory NAND Flash Memory Features Figure 1: 48-PIN TSOP Type 1 • FNN Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes)


    Original     		PDF 512Mb x8/x16 48-PIN 09005aef81d3348f 09005aef81d3345f SpecTek flash Micron 512MB nand FLASH SpecTek nand spectek nand flash M2 8gb pinout SpecTek nand 8 M29A 04/SpecTek flash flash chip 8gb

    Untitled

    Abstract: No abstract text available
    Text: 512Mb through 8Gb x8/x16 Multiplex NAND Flash Memory NAND Flash Memory Features Figure 1: 48-PIN TSOP Type 1 • FNN Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes)


    Original     		PDF 512Mb x8/x16 48-PIN See9/05 09005aef81d3348f 09005aef81d3345f

    SpecTek flash

    Abstract: No abstract text available
    Text: 512Mb through 8Gb x8/x16 Multiplex NAND Flash Memory NAND Flash Memory Features Figure 1: 48-PIN TSOP Type 1 • Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes)


    Original     		PDF 512Mb x8/x16 48-PIN 09005aef81d3348f 09005aef81d3345f SpecTek flash

    reset nand flash HYNIX

    Abstract: hynix mcp hynix nand PROGRAMMING hynix NAND ECC hynix nand spare area hynix nand Hynix E NAND hynix nand 2G nand flash HYNIX 1gb toshiba mcp nand
    Text: S30MS01GP and 1Gbit NAND Comparison Application Note by Chris Brewster 1. Introduction Spansion ORNAND devices are designed to have either an NOR or NAND interface. ORNAND serves as a complement to XIP NOR flash memory if NOR interface is chosen; it serves as replacement for raw NAND for


    Original     		PDF S30MS01GP reset nand flash HYNIX hynix mcp hynix nand PROGRAMMING hynix NAND ECC hynix nand spare area hynix nand Hynix E NAND hynix nand 2G nand flash HYNIX 1gb toshiba mcp nand

    S34ML08G

    Abstract: S34ML08G2 S34ML04G2 S34ML04G s34ml01g S34ML08G201 NAND FLASH BGA
    Text: S34ML08G2 NAND Flash Memory for Embedded 8 Gb, 4-bit ECC, x8 I/O and 3V VCC Data Sheet Advance Information S34ML08G2 NAND Flash Memory for Embedded Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S34ML08G2 S34ML08G2 S34ML08G S34ML04G2 S34ML04G s34ml01g S34ML08G201 NAND FLASH BGA

    S34ML08G

    Abstract: S34ML08G2 Spansion S34ML08G2 s34ml Spansion NAND Flash slc NAND FLASH BGA NAND Flash Memory 2013
    Text: S34ML08G2 NAND Flash Memory for Embedded 8 Gb, 4-bit ECC, x8 I/O and 3V VCC Data Sheet Advance Information S34ML08G2 NAND Flash Memory for Embedded Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S34ML08G2 S34ML08G2 S34ML08G Spansion S34ML08G2 s34ml Spansion NAND Flash slc NAND FLASH BGA NAND Flash Memory 2013

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    digital VOICE RECORDER

    Abstract: KM29U128 NAND Reliability note KM29U128IT KM29U128T TSOP 48 Package nand memory
    Text: KM29U128T, KM29U128IT FLASH MEMORY 16M x 8 Bit NAND Flash Memory • Voltage supply : 2.7V~3.6V • Organisation - Memory Cell Array : 16M + 512K bit x 8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte


    Original     		PDF KM29U128T, KM29U128IT 528-Byte KM29U128 KM29U128T/TI digital VOICE RECORDER NAND Reliability note KM29U128T TSOP 48 Package nand memory

    2fu smd transistor

    Abstract: Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
    Text: Memory MOS Memory Lineup • Static RAM Capacity bits Device TC55V1001ASTI/ASRI 1M Organization Access time (ns) Power supply voltage (V) 128 K X 8 TC55V2001STI/SRI Package Pins TSOP(8 X 13.4) 32 TSOP- (10 X 14) 40 TSOP- (0.4 inch) 44 256 K X 8 TC55V020FT/TR


    Original     		PDF TC55V1001ASTI/ASRI TC55V2001STI/SRI TC55V020FT/TR TC55V2161FTI TC55V200FT/TR TC55V040FT/TR TC55V400FT/TR TC58VT TC75S55FU 2fu smd transistor Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT

    S25FL129

    Abstract: S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K
    Text: Spansion Product Selector Guide Embedded and Mobile Applications Portfolio March 2011 Spansion ® Products Portfolio . Automotive . Consumer electronics . Gaming . Industrial equipment . Machine-to-Machine Spansion offers a wide range of NOR Flash memory solutions in multiple voltages,


    Original     		PDF 128Mb 256Mb 512Mb 1-866-SPANSION 43715B S25FL129 S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K

    Untitled

    Abstract: No abstract text available
    Text: S34ML08G2 NAND Flash Memory for Embedded 8 Gb, 4-bit ECC, x8 I/O and 3V VCC Data Sheet Advance Information S34ML08G2 NAND Flash Memory for Embedded Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S34ML08G2 S34ML08G2

    TSOP 48 Package nand memory

    Abstract: NAND flash memory nor flash 1Mx16 flash TSOP I KM29N040T KM28U800
    Text: 1. INTRODUCTION <NOR FLASH MEMORY> <NAND FLASH MEMORY> 2. PRODUCT GUIDE < NOR FLASH MEMORY > Density Org. Supply 2.7V-3.6V 8M bit 16M bit Part Number KM28U800 Features 2Mx8 1Mx16 4.5V-5.5V KM28N800 55/70/90 2.7V-3.6V KM28U160 80/90/120ns Package Standard Temp.


    OCR Scan     		PDF 512KX 1Mx16 KM28N800 KM28U800 90/100/120ns 48CSP KM28U160 80/90/120ns KM29U128T KM29U128IT TSOP 48 Package nand memory NAND flash memory nor flash 1Mx16 flash TSOP I KM29N040T

    Samsung "NAND Flash" "ordering information"

    Abstract: NOR Flash samsung nor flash samsung memory
    Text: 3. ORDERING INFORMATION NOR FLASH MEMORY Z 3 KM 28 B CCC D E - F GG Access Time SAMSUNG Memory Block Architecture NOR FLASH Operating Voltage Range Package Operating Temperature Range Densitv/Oraanization 1. SAMSUNG Memory 2. NOR Flash 6. Package Type T -G -Z —


    OCR Scan     		PDF 800-------------------8Mbit, x8/x16 16Mbit, 44-Lead 48-CSP 32000---------------32M 128Mbit Samsung "NAND Flash" "ordering information" NOR Flash samsung nor flash samsung memory