TSOP 9X12 Search Results

TSOP 86 Package

Abstract: TSOP 54 tray TSOP 54 Package TSOP 66 Package TSOP II 54 Package TSOP 62 Package JEDEC tray standard tsop TSOP package tray
Contextual Info: UNIT : mm HEAT PROOF PRE 7 112.0 NEC 135° MAX. 14.00 12.00 TSOP 2 400MIL22 135.9 9x12=108 A A' 11.8 24.70 21.70 21.8 271.7 315.0 (322.6) SECTION A – A' 5.62 (6.35) 7.62 21.8 16.5 Applied Package Quantity (pcs) Material 54-pin • Plastic TSOP(II)(400mil)

MX29GL256

Abstract: 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D
Contextual Info: Spansion NOR Flash Memory Competitive Cross Reference Guide December 2009 Parallel 1.8V Density Voltage Bus Mb (V) VIO (V) Type Bus Sector Width Type # Initial Access Burst Speed Banks Times (ns) (MHz) Packages Temp Range Recommended Pin Software Spansion OPN Compatible Compatible Notes

GLT41016-30J4

Abstract: GLT41016 GLT41016-30TC GLT41016-35J4 GLT41016-35TC GLT41016-40J4 GLT41016-40TC GLT41016-45J4 GLT41016-45TC
Contextual Info: G -LINK GLT41016 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Feb 2004 Rev 2.2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41016 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41016 offers Fast Page mode with Extended Data Output, and has

GLT41116-40J4

Abstract: GLT41116-35J4 64K x 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE GLT4 GLT41116 GLT41116-30J4 GLT41116-30TC GLT41116-35TC GLT41116-40TC GLT41116-45J4
Contextual Info: G -LINK GLT41116 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Feb 2004 Rev 2.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41116 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41116 offers Fast Page mode ,and has both BYTE WRITE and

BA 2003

Abstract: GLT5160L16 GLT5160L16-10TC GLT5160L16-8TC
Contextual Info: GLT5160L16 ADVANCED 16M 2-Bank x 524288-Word x 16-Bit Synchronous DRAM FEATURES u Single 3.3 V ±0.3 V power supply u Clock frequency 100 MHz / 125 MHz / 143 MHz/ 166 MHz u Fully synchronous operation referenced to clock rising edge u Dual bank operation controlled by BA (Bank Address)

GLT725608

Abstract: GLT725608-12TC GLT725608-12TS GLT725608-15J3 GLT725608-15TC GLT725608-15TS GLT725608-20J3 GLT725608-20TS GLT725608-12J3 FPM RAM
Contextual Info: G -LINK GLT725608 Ultra High Performance 32K x 8 Bit CMOS STATIC RAM Feb, 2004 Rev.2.5 Features : Description : ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ 32K x 8-bit organization. Very high speed 12,15,20 ns. Low standby power. Fully static operation 5V±10% power supply.

fcBGA PACKAGE thermal resistance

Abstract: 409-ball CERAMIC PIN GRID ARRAY wire lead frame lead frame pin grid array 30-PIN TSOP 48 stacked flash bonding TSOP 48 thermal resistance Sharp Packages SSOP MM1248 ebga 304
Contextual Info: IC PACKAGE FUJITSU MICROELECTRONICS LIMITED Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387 http://jp.fujitsu.com/fml/en/ For further information please contact: North and South America

GLT5160AL16P-7TC

Abstract: GLT5160AL16
Contextual Info: G -LINK GLT5160AL16 ADVANCED 16M 2-Bank x 524288-Word x 16-Bit Synchronous DRAM FEATURES Single 3.3 V ±0.3 V power supply u Clock frequency 100 MHz / 125 MHz / 143 MHz/ 166 MHz u Fully synchronous operation referenced to clock rising edge u Dual bank operation controlled by BA (Bank Address)

GLT41216-40TC

Abstract: GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216-35TC GLT41216-40J4 GLT41216-45J4 GLT41216-45TC
Contextual Info: G -LINK GLT41216 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Feb 2004 Rev.2.2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41216 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41216 offers Fast Page mode with Extended Data Output, and has

SMD MARKING CODE 071 A01

Abstract: smd code 38P LGA 1155 PIN diagram MARKING CODE SMD IC A08 L QUAD Aluminum nitride smd marking m05 LGA 1155 Socket PIN diagram pitch 0.4 QFP 256p marking code smd fujitsu Texas Instruments epoxy Sumitomo
Contextual Info: To Top Contents Safety Precautions 1 Introduction to Packages 1.1 Overview 1.2 Package Lineup 1.3 Package Forms 1.4 Package Structures 1.5 How Package Dimensions Are Indicated 1.6 Package Codes 1.7 Marking 1.8 Future Trends in Packages 2 Package Mounting Methods

V62C2182048

Contextual Info: MOSEL VITELIC PRELIMINARY V62C2182048 256K X 8 LOW POWER, LOW VOLTAGE SRAM Features Description • ■ ■ ■ ■ ■ ■ ■ The V62C2182048 is a very low power CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active

V62C2182048

Contextual Info: MOSEL V I T E L I C V62C2182048 25 6K X 8 LOW POWER, LOW VOLTAGE SRAM PRELIMINARY Features Description • ■ ■ ■ ■ ■ ■ ■ The V62C2182048 is a very low power CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active

IC51-128

Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005
Contextual Info: Hitachi Semiconductor Package Data Book Introduction Contents Section 1 Introduction of Packages 1.1 Types of Packages and Advantages 1.2 IC Package Name and Code Indication 1.3 Method of Indicating IC Package Dimensions 1.4 Lineups in Terms of Shapes and Materials

LGA 1155 Socket PIN diagram

Abstract: marking code smd fujitsu Yamaichi ic354 marking code smd semiconductor fujitsu pitch 0.4 QFP 256p SMD transistor M05 YAMAICHI ic234 smd code 38P fpq-144-0.5-03 smd p08
Contextual Info: Preface Thank you for your continuing loyalty to Fujitsu's semiconductor products. Electronic equipment is continually becoming smaller, lighter, and less expensive while also growing more advanced in terms of function and performance. As a result, applications for semiconductor devices such as IC and

HT 1200-4

Abstract: IC51-2084-1052-11 IC51-0242-1341 YAMAICHI ic234 transistor fpq 630 IC51-0404-1511 fpq-144-0.5-03 648-0482211-A01 IC189 Series Open Top SOP, SSOP, TSOP Type I a HLQFP 176 Package drawing
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001C 4th Edition March/98 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher

HT 1200-4

Abstract: YAMAICHI ic234 PT740 AB TSSOP YAMAICHI SOCKET FP-20-0.65-01 IC51-1444-1354-7 PT817 Enplas drawings IC51-2084-1052-11 IC 7418 IC51-0242-1341
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001B 3rd Edition March/97 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher functional

MD2810-D08

Abstract: Diskonchip MD2811-D32 MD2810 Diskonchip Millennium Plus Millennium MD-2810-D08 AP-DOC-054 AP-DOC-10 MD3831-D16
Contextual Info: Application Note AP-DOC-056 Sharon Dagan (October 30, 2002) Migrating from DiskOnChip Millennium 8MB to DiskOnChip Millennium Plus 1. Scope 2.1 This application note describes the hardware integration guidelines for migrating from first-generation DiskOnChip Millennium 8MByte (G1) to the

PT740 AB

Abstract: PM351 transistor 9726 126 EDR-7313 ED-7402 texas instruments data guide manual Hitachi DSAUTAZ006 DO-35 land pattern Silicon Point Contact Mixer Diodes ED-7311
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001H 9th Edition March/2001 Semiconductor & Integrated Circuits Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher

Contextual Info: M O SE L V IT E L IC V62C21162048 128K x 16 LOW POWER, LOW VOLTAGE SRAM PRELIMINARY INFORMATION Features Description • ■ ■ ■ ■ ■ ■ ■ The V 62C 21162048 is a 2,097,152-bit static random-access memory organized as 131,072 words by 16 bits. Inputs and three-state outputs are

V62C21162048

Contextual Info: PRELIMINARY INFORMATION V62C21162048 128K x 16 LOW POWER, LOW VOLTAGE SRAM MOSEL VITELIC Features Description • ■ ■ ■ ■ ■ ■ ■ The V62C21162048 is a 2,097,152-bit static random-access memory organized as 131,072 words by 16 bits. Inputs and three-state outputs are

MD2802-D08

Abstract: MD2802 MD2810-D08 TRUEFFS Diskonchip Millennium MD2802-D08 Diskonchip diskonchip md2802 M-Systems MD-2811-D32-V3 MD2811-D16-V3Q18
Contextual Info: July 2004 DiskOnChip Product Family – OS Compatibility List 1. Supported Operating Systems Operating System DOS BIOS Windows CE (2.11 - 3.0) and derivatives Windows CE .NET (4.0, 4.1, 4,2) and derivatives Available From Driver Version (TrueFFS 5.x) Driver

PT740 AB

Abstract: 095G Unitechno rfpak fuji semiconductors manual 652B0082211-002 ADE-410-001J BP-108 EDR7315 QP4-064050-002-A
Contextual Info: Hitachi Semiconductor Package Data Book ADE-410-001J 11th Edition March/2002 Semiconductor & Integrated Circuits Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher

Contextual Info: V62C2162048L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Low-power consumption - Active: 65mA ICC at 35ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C2162048L is a Low Power CMOS Static

V62C3162048L

Contextual Info: V62C3162048L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Low-power consumption - Active: 65mA ICC at 35ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C3162048L is a Low Power CMOS Static