TSOP RECEIVER Search Results

2fu smd transistor

Abstract: Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
Contextual Info: Memory MOS Memory Lineup • Static RAM Capacity bits Device TC55V1001ASTI/ASRI 1M Organization Access time (ns) Power supply voltage (V) 128 K X 8 TC55V2001STI/SRI Package Pins TSOP(8 X 13.4) 32 TSOP- (10 X 14) 40 TSOP- (0.4 inch) 44 256 K X 8 TC55V020FT/TR

TSOP RECEIVER

Abstract: TSOP IR ir led receiver bs12 "ir receiver" 19326 led Metal holder smd 83 tsop 38 TSOP1236TB1
Contextual Info: General Information Vishay Semiconductors General Information PRODUCT DESIGNATION AND SELECTION FOR TSOP IR RECEIVER MODULES Description of the TSOP series field codes: T S O P 1 Z Ammo pack optional : Vishay IR receiver Product groups: (blank), 3, 5, 7, 8, 9

VCCQ15

Contextual Info: White Electronic Designs W3E64M72S-XSBX PRELIMINARY* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP

Contextual Info: White Electronic Designs W3E32M72SR-XSBX 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s 74% SPACE SAVINGS vs. TSOP Package: 51% I/O reduction vs TSOP • 208 Plastic Ball Grid Array PBGA , 16 x 25mm

Contextual Info: White Electronic Designs W3E32M72S-XBX 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266MHz 40% SPACE SAVINGS vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 34% I/O reduction vs TSOP 2.5V ±0.2V core power supply

Contextual Info: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP

Contextual Info: White Electronic Designs W3E32M72SR-XSBX ADVANCED* 32Mx72 REGISTERED DDR SDRAM FEATURES BENEFITS Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s 74% SPACE SAVINGS vs. TSOP Package: 51% I/O reduction vs TSOP • 208 Plastic Ball Grid Array PBGA , 16 x 25mm

tsop 66

Abstract: W3E32M72S-XBX
Contextual Info: White Electronic Designs W3E32M72S-XBX 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266, 333Mbs 40% SPACE SAVINGS vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 34% I/O reduction vs TSOP 2.5V ±0.2V core power supply

Contextual Info: 184pin Registered DDR SDRAM DIMMs based on 512Mb C ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb C ver. based Registered DIMM series provide

HYMD564M646C

Abstract: d431 DDR266 DDR266B DDR333 DDR400 DDR400B HYMD532M646C hynix ddr hynix ddr sdram
Contextual Info: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered

hynix ddr400 sdram 1Gb

Abstract: DDR200 DDR266 DDR266A DDR266B DDR333 hynix ddr hynix module suffix
Contextual Info: 184pin Registered DDR SDRAM DIMMs based on 512Mb C ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb C ver. based Registered DIMM series provide

Contextual Info: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP

Contextual Info: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM FEATURES BENEFITS „ Data rate = 200, 250, 266 and 333Mbs* „ 66% Space Savings vs. TSOP „ Package: „ Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm „ 55% I/O reduction vs TSOP

7812

Abstract: VCCQ15
Contextual Info: White Electronic Designs W3E32M72S-XBX ADVANCED* 32Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266MHz 40% SPACE SAVINGS vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 34% I/O reduction vs TSOP 2.5V ±0.2V core power supply

Contextual Info: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered

Contextual Info: 184pin Registered DDR SDRAM DIMMs based on 512Mb B ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DIMM series provide

Contextual Info: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered

D431

Abstract: DDR266 DDR266B DDR333 DDR400 DDR400B hynix module suffix DDR333 production drawing
Contextual Info: 200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb B ver. based unbuffered

DDR200

Abstract: DDR266 DDR266A DDR266B DDR333 hynix module suffix
Contextual Info: 184pin Registered DDR SDRAM DIMMs based on 512Mb B ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DIMM series provide

W3E64M72S-XBX

Contextual Info: White Electronic Designs W3E64M72S-XBX ADVANCED* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP 2.5V ±0.2V core power supply

Contextual Info: 184pin Unbuffered DDR SDRAM DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered DIMM series provide

HYMD512646cp8j

Abstract: HYMD512646CP8J-D43 DDR266 DDR266B DDR333 DDR400 DDR400B HYMD532646CP6-H HYMD532646CP6J hynix module suffix
Contextual Info: 184pin Unbuffered DDR SDRAM DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered DIMM series provide

MA 2810

Abstract: TCl 785 hynix module suffix BA111 DDR200 DDR266 DDR266A DDR266B DDR333
Contextual Info: 184pin Registered DDR SDRAM DIMMs based on 256Mb D ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 256Mb D ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 256Mb D ver. based Registered DIMM series provide

DDR266

Abstract: DDR266A DDR266B DDR333 DDR400 DDR400B HYMD216M646D 256mb ddr333 200 pin hynix module suffix ci017
Contextual Info: 200pin Unbuffered DDR SDRAM SO-DIMMs based on 256Mb D ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 256Mb D ver. DDR SDRAMs in 400 mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 256Mb D ver. based unbuffered