DF83 Search Results

DF83-27

Contextual Info: 3-WAY IN-PHASE DIVIDER/COMBINER MODEL DF83-27 Guaranteed Specifications Parameter Range Frequency Features Limits 25 MHz to 1000 MHz Center 25 MHz to 200 MHz 0.5 dB Max 200 MHz to 1000 MHz 1.0 dB Max 25 MHz to 50 MHz 15 dB Min 50 MHz to 200 MHz 22 dB Min Insertion Loss

Contextual Info: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

Contextual Info: A M D tl Am29DL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from

29F032B

Abstract: m29f032b
Contextual Info: AMDZ1 Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirem ents ■ ■ M anufactured on 0.32 \im process technology

Am29DL400BT

Contextual Info: MiN AR AMDZ1 Am29DL400B 4 Megabit 512 K x 8-Blt/2S6 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations Sector protection — Host system can program or erase in one bank,

29f1008

Abstract: 29f100
Contextual Info: FINAL AMDB Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Embedded Erase algorithm autom atically

Contextual Info: ' Pt: LiP,MI i AR AMD* Am29F200A 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ High performance

am29f400bb

Contextual Info: 'RH .v'IKMF AM Dii Am29F400B 4 Megabit (512 K x 8-Bit/256 K x 16-Bit dMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 vott-only operation for read, erase, and program operations — Minimizes system level requirements

Contextual Info: AMD£I Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V +10% , single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 |jm process technology

29f800bb

Abstract: 29F800BT 29F800B 29F800BT-70 29F800BT-90 29F800BB-70 M29F800B 29f800bb55
Contextual Info: AMD£I Am29F800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements

Contextual Info: PRELIMINARY A M Dii Am29LV400B 4 Megabit 512 K X 8-Bit/256 K X 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 2.7 to 3.6 volt read and w rite operations for battery-powered applications

Contextual Info: • JUNE 1990 ]P]LK SSEY SEM ICONDUCTORS ULA DF SERIES HIGH PERFORMANCE MIXED ANALOG/DIGITAL ARRAY FAMILY Supersedes May 1989 edition The n e w D F s e rie s o f a rra y s a re d e s ig n e d to p ro vid e cost effe c tiv e s in g le chip solutions to high s p e e d com b in e d

29DL400BT-70

Contextual Info: PRELIMINARY AMDil Am29DL400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations ■ Sector protection — Host system can program or erase in one bank,

Contextual Info: AMD£I Am29F800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements

AM29F080B-120

Abstract: AM29F080B-150 AM29F080B-75 AM29F080B-90 SA10 df83
Contextual Info: Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F080 device

ceramic bandpass Filter 10MHz

Abstract: DFC Murata LJ950-D-B Dielectric Filters ceramic coaxial resonators BP34R1960S60A DF2403S20A DF1890S80A DF650S30B DF906
Contextual Info: TOKEN DF-A Dielectric Filters Dielectric Filters Token Offers Dielectric RF Filters for Telecoms DF-A Preview Token has extended the capabilities of its filter product line with the introduction of a new range of dielectric microwave filters to the available frequency range up to 5.8GHz.

Contextual Info: PRELIMINARY Am29LV800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

Contextual Info: PRELIMINARY Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements

Contextual Info: AMD£I Am29LV160B 16 Megabit 2 M x 8-Bit/I M x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

Contextual Info: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C

Contextual Info: AMD£I ADVANCE INFORMATION Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 w rite/erase cycles guaranteed ■ Package options

29f400b

Contextual Info: PRELIMINARY A M Dii Am29F400B 4 Megabit 512 K X 8-Bit/256 K X 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations

Contextual Info: PRELIM IN ARY AMDZ1 Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — M inimizes system level power requirem ents ■ M anufactured on 0.35|xm process technology

Contextual Info: AMD£I Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology