TSSA Search Results

Contextual Info: TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability

AMI 602

Contextual Info: Electrical Characteristics SIEM ENS 5 Electrical Characteristics Absolute Maximum Ratings V dd/ V ddp = 5 V ± 5 %; V ssd/Kssp/Tssa = 0 V; Tn = —25 to 70 'C Parameter Symbol min. Limit Values max. Unit Ambient temperature under bias T a -3 5 80 •c Storage temperature

TSSA4500

Abstract: tssa-4
Contextual Info: Te m ic TELEFUNKEN Semiconductors TSSA4500 GaAlAs Infrared Emitting Diode in Side View Package Description TSSA 4500 is a high intensity infrared em itting diode in G aA lA s on G aA lA s technology, molded in a clear, untinted plastic package w ith spherical

Contextual Info: T em ic TELEFUNKEN Semiconductors TSSA 2500 GaAlAs IR Emitting Diode in Side View Miniature Package Description TSSA 2500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology, molded in a clear, untinted miniature plastic side view package.

maxTouch

Abstract: 9S08QG8 capacitive touch on-off Capacitive Touch Sense Switch HCS08 rotary decoder HCS08 c code example USING TIMER OVERFLOW interrupt keyboard decoder keypad decoder
Contextual Info: Touch Sensing Software API Reference Manual Document Number: TSSAPIRM Rev. 4 07/2010 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370

Contextual Info: TSSA5U50 thru TSSA5U60 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

Ir photodiodes

Contextual Info: TELEFUNKEN Semiconductors TSSA 4500 GaAlAs Infrared Emitting Diode in Side View Package Description TSSA 4500 is a high intensity infrared emitting diode in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package with spherical side view lens. The device is spectrally matched

TSSa

Contextual Info: TELEFUNKEN Semiconductors TSSA 2500 GaAlAs IR Emitting Diode in Side View Miniature Package Description TSSA 2500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology, molded in a clear, untinted miniature plastic side view package.

Contextual Info: Touch Sensing Software API Reference Manual TSSAPIRM Rev. 8 08/2013 How to Reach Us: Information in this document is provided solely to enable system and software Home Page: freescale.com implementers to use Freescale products. There are no express or implied copyright

Contextual Info: TSSA3U45 thru TSSA3U60 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

Contextual Info: TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability

marking b14 diode

Contextual Info: TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability

Contextual Info: TSSA3U45 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

Contextual Info: TSSA3U45 thru TSSA3U60 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

U2761B

Contextual Info: U2761B DECT RF / IF IC Description The U2761B is an integrated circuit manufactured in Atmel Wireless & Microcontrollers’ UHF5S technology, designed for DECT application. It contains rejection mixer, IF amplifier, FM demodulator working at f = fIF/2, baseband filter, RSSI, TX preamplifier and power-ramping generator for power amplifier.

CLASS 2500 VALVE PRESSURE CHART

Abstract: smc itv2000 itv2030 ITV003 4DSX ITV001 COMMON RAIL SOLENOID DIRECT INJECTION IITV20-02-3 ITV1000 ITV3000
Contextual Info: SMC REGULATOR Electro-pneumatic Regulator Electronic Vacuum Regulator ITV2000 Series Series Model ITV Regulating pressure range Port size Page F.R.L. AV Series ITV0000 With a simplified high-density circuit board design, an extremely compact size has been achieved.

SMC zse40

Abstract: ISE40 ZSE40 ZSE40F smc zse 40 SMC Pneumatics zse40 3M EMC Products SMC Pneumatics ZS-22-A Hitech Displays Sdn Bhd
Contextual Info: High Precision, Digital Pressure Switch Series ZSE40/ISE40 ZSE„ ISE„ PSE Z I SE3 PS Z I SE 12 ZSP ISA2 IS„ ZSM PF2„ IF„ Data 16-2-15 Pressure → High speed response: 2.5 ms or less Momentary change With anti-chattering function Anti-chattering function

Mobile AMD-K6-II

Abstract: AMD K6
Contextual Info: Preliminary Information AMDJ1 Mobile AMD-K6 Processor Data Sheet Publication # 2 1 0 4 9 Rev: H Issue Date: September 1998 Amendment T his docum ent contains in fo rm atio n on a p ro d u ct u n d e r developm ent a t A dvanced Micro D evices AMD . The in fo rm atio n is in te n d e d to help you e v alu a te this pro d u ct. AMD r e ­

Contextual Info: •HYUNDAI H Y 6 7 V 1 8 1 0 0 /1 0 1 64K X 18 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst ad­ dress counter and pipelined output. All synchronous inputs pass through registers controlled by a positiveedge triggered clock K .

Contextual Info: Freescale Semiconductor Document Number: AN4781 Rev 0, 09/2013 Application Note In-Depth Understanding of Water Tolerance Feature in Touch-Sensing Software Library by: Eduardo Viramontes and Giuseppe Pia 1 Introduction The water tolerance feature in the Xtrinsic

VCO TX 09 H2

Contextual Info: Tem ic U2901B S e m i c o n d u c t o r s Bluetooth Single-Chip Transceiver IC Description The U2901B is a bipolar intergrated circuit manufactured using TEMIC Semiconductors’ advanced UHF process. This IC includes a transceiver for the 2.45 GHz ISM band

112B

Abstract: BC808 QFN48 T2802 T2802-PLH T7024 T7026
Contextual Info: Features • • • • • • • • Fully Integrated TX/RX with VCO Fast Settling Synthesizer Unlimited Multi-slot Operation with Advanced Closed-loop Modulation No Mechanical Tuning Required Low Current Consumption Auxiliary Voltage Regulator On-chip 3.2 V to 4.6 V

Contextual Info: T O S H IB A D IG IT A L IN T E G R A T E D CIRCUIT INTEGRATED CIRCUIT TO SHIBA T C 5 2 8 1 2 8 \ P / A J- 1 0 , TC528128AP / A J -12 TECHNICAL DATA SILIC O N G A T E C M O S P R E L IM IN A R Y 131,072W ORDSx88ITS M U LT IPO R T D RA M DESCRIPTION The TC528128AP/ A J is a CMOS multiport memory equipped with a 131,072-words by 8-bits

Contextual Info: Tem ic U2801B S e m i c o n d u c t o r s DECT Single Chip Transceiver Description The U2801B is an RF IC for low-power DECT applica­ tions. The TQFP48-packaged IC is a complete transceiver including image rejection mixer, IF amplifier, FM demodulator, baseband filter, RSSI, TX preamplifier,