TSSOP8 IGBT FLASH Search Results

igbt xenon tube

Abstract: xenon tube Xenon Flash 6v xenon flash circuit TIG030TS Xenon flash tube Xenon igbt flash TIG032TS TIG058E8
Contextual Info: T OP I C S News Release Product Topics 22.January 2009 release Ultra Small Xenon Flash IGBT for Cell Phone Achieved ICP=150A with small 2.8mm x 2.9mm size first in the industry Mount height 0.9mm! The industry’s smallest size* that is optimal for mounting on cell phones with a camera.

Xenon Flash 6v

Abstract: xenon Xenon Flash xenon 5W 12V TIG032TS TIG030TS TIG014SS TIG058E8 RE0208DA IGBT 320V
Contextual Info: T OP I C S 新 闻 发 表 新 商 品 2009年1月22日新闻发表 手机用超小型Xenon Flash IGBT 它以业界最小2.8mm x 2.9mm实现了ICP=150A 安装高度实现了0.9mm! 最适用于带照相功能的手机。它实现了业界最小*安装面积。*: 截至2009年1月22日

P-Channel mosfet 400v to220

Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
Contextual Info: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages

CY25BAH-8F

Abstract: CY25BAH-8F-T13 TSSOP8 IGBT FLASH
Contextual Info: CY25BAH-8F Nch IGBT for Strobe Flash REJ03G0284-0300 Rev.3.00 Nov 29, 2005 Features • Small surface mount package TSSOP-8  Terminal Pb free: PTSP0008JA-A (8P2J-A)  Complete Pb free: PTSP0008JB-B (TTP-8DV) • VCES : 400 V • ICM : 150 A • Drive voltage : 2.5 V

STROBE FLASHER USE IGBT

Abstract: CY25BAH-8F CY25BAH-8F-T13 400UF
Contextual Info: CY25BAH-8F Nch IGBT for Strobe Flasher REJ03G0284-0100 Rev.1.00 Aug.20.2004 Features • • • • Small surface mount package TSSOP-8 VCES : 400 V ICM : 150 A Drive voltage : 2.5 V Outline TSSOP-8 4 3 2 1 5 8 1,2,3,4 : Collector 5,6 : Emitter 7 : Emitter

led strobe light circuit diagram

Abstract: RJP4002ASA Diagram igbt flash RD3CYD08 RJP4002ASA-00-Q0
Contextual Info: RJP4002ASA Nch IGBT for Strobe Flash REJ03G1473-0100 Rev.1.00 Oct 13, 2006 Features • • • • Small surface mount package TSSOP-8 VCES : 400 V ICM : 150 A Drive voltage : 2.5 V Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 <TTP-8DV>)

RD5CYD08

Abstract: RD5CYDT08 RJP4003ASA RJP4003ASA-0-Q0
Contextual Info: RJP4003ASA Nch IGBT for Strobe Flash REJ03G1475-0100 Rev.1.00 Oct 13, 2006 Features • • • • Small surface mount package TSSOP-8 VCES : 400 V ICM : 150 A Drive voltage : 4 V Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 <TTP-8DV>)

STROBE FLASHER USE IGBT

Abstract: CY25BAJ-8F CY25BAJ-8F-T13
Contextual Info: CY25BAJ-8F Nch IGBT for Strobe Flasher REJ03G0285-0100 Rev.1.00 Aug.20.2004 Features • • • • Small surface mount package TSSOP-8 VDSS : 400 V ICM : 150 A Drive voltage : 4 V Outline TSSOP-8 4 3 2 1 5 8 1,2,3,4 : Collector 5,6,7 : Emitter 8 : Gate

RD5CYD08

Abstract: RD5CYDT08 RJP4003ASA RJP4003ASA-0-Q0 TSSOP8 IGBT FLASH
Contextual Info: RJP4003ASA Nch IGBT for Strobe Flash REJ03G1475-0200 Rev.2.00 Nov 10, 2008 Features • • • • Small surface mount package TSSOP-8 VCES : 400 V ICM : 150 A Drive voltage : 4 V Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 <TTP-8DV>)

CY25BAJ-8F

Abstract: CY25BAJ-8F-T13
Contextual Info: CY25BAJ-8F Nch IGBT for Strobe Flash REJ03G0285-0200 Rev.2.00 May 23, 2005 Features • Small surface mount package TSSOP-8  Terminal Pb free: PTSP0008JA-A (8P2J-A)  Complete Pb free: PTSP0008JB-B (TTP-8DV) • VDSS : 400 V • ICM : 150 A • Drive voltage : 4 V

GT30J124

Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.

GT30F124

Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Contextual Info: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

GT45F122

Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Contextual Info: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

FGW15N40

Abstract: 15N40 TSSOP8 IGBT FLASH
Contextual Info: FGW15N40 Strobe Flash N-Channel Logic Level IGBT Features General Description „ VCE SAT = 5.0V at IC=150A This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have

Contextual Info: FGW15N40A Strobe Flash N-Channel Logic Level IGBT Features General Description „ VCE SAT = 4.4V at IC=150A This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have

CY25BAH-8F

Abstract: CY25BAH-8F-T13 cy25ba
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

scr trigger battery charger

Abstract: scr use in battery charger Battery Charger by using SCR Battery Charger with SCR scr battery charger circuit diagram charger circuit with scr AT1453 AT1453AP AT1453BP scr battery charger
Contextual Info: AT1453 Preliminary Product Information Photoflash Capacitor Charger for DSC Features General Description • 2.5 to 5.5V supply voltage operating range. • Low current consumption: 1mA in operation, • 50 kHz or 100kHz operation frequency . • Built-in maximum duty control.

scr battery charger

Abstract: AT1452AP scr trigger battery charger scr battery charger circuit diagram Battery Charger Circuit Using SCR charger circuit with scr photoflash charger SCHEMATIC circuit scr oscillator AT1452 AT1452BP
Contextual Info: AT1452 Preliminary Product Information Photoflash Capacitor Charger for DSC Features General Description • 2.5 to 5.5V supply voltage operating range. • Low current consumption: 1mA in operation, • 50 kHz or 100kHz operation frequency . • Built-in maximum duty control.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

8g136

Abstract: toshiba week code marking
Contextual Info: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Tc=70℃(max) Maximum Ratings (Ta = 25°C)

GT30F121

Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
Contextual Info: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications

Contextual Info: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Tc=70℃(max) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: AP28G40GEO RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Input Impedance High Peak Current Capability C C C VCE 400V ICP 150A C Low Gate Drive Strobe Flash Applications TSSOP-8 E E E C G G E Absolute Maximum Ratings

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid