TT 40N Search Results

Contextual Info: Power F-MOS FET 2SK806 2SK806 Silicon N-channel Power F'MOS FET Package Dimensions •Features • Low ON resistance RDS on : Rds (on) = 1.8il (typ.) • High switching rate ; tt = 40ns (typ.) • No secondary breakdown Unit: mm • High breakdown voltage

2SJ512

Contextual Info: TOSHIBA 2SJ512 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSV 2SJ512 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 r • Low Drain-Source ON Resistance

Contextual Info: TOSHIBA 2SJ512 TOSHIBA FIELD EFFECT TRANSISTOR i SILICON P CHANNEL MOS TYPE tt-M O SV <MT; Vi Vm i INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 + 0.3

2SK981

Abstract: 2SK981A
Contextual Info: P o w e r F-MOS FET 2SK981, 2SK 981A 2SK981, 2SK981A Silicon N-channel Power F-MOS FET P ackage Dim ensions • Features • Low ON resistan ce R Ds on : RDs (on) = 2. Oil (typ.) Unit: mm • High sw itching ra te : tt = 40ns (typ.) 3.7m ax 7.3max. • No secondary breakdow n

HZK201

Abstract: if5g PJ 900 HZF36 HZK11L HZK12 HZK12L HZK15 HZK16L HZK18
Contextual Info: - y m & tt £ P mW HZF36 HZK2 HZK2LL HZK3 HZK3LL nu HZK41L HZK5 HZK5LL HZK6 HZK6L HZK7 HZK7L HZK9 HZK9L HZKll HZK11L HZK12 HZK12L HZK15 HZK151 HZJÜ6 HZK16L HZK18 HZK18L HZK20 HZK20L HZK22 HZK22L HZK24 HZK24L HZK27 HZK27L HZK30 HZK30L HZK33 HZK33L HZK36

HZF36

Abstract: HZK11L HZK12 HZK12L HZK15 HZK16L HZK18 HZK18L HZK20 HZK201
Contextual Info: - y m & tt £ P mW HZF36 HZK2 HZK2LL HZK3 HZK3LL nu HZK41L HZK5 HZK5LL HZK6 HZK6L HZK7 HZK7L HZK9 HZK9L HZKll HZK11L HZK12 HZK12L HZK15 HZK151 HZJÜ6 HZK16L HZK18 HZK18L HZK20 HZK20L HZK22 HZK22L HZK24 HZK24L HZK27 HZK27L HZK30 HZK30L HZK33 HZK33L HZK36

PA107DP

Contextual Info: PA107DP PA107DP P r oo PA107DP dd uu cc tt TI en cnhonvoaltoi go yn FF rr oomm Power Operational Amplifiers FEATURES GENERAL DESCRIPTION The PA107DP is a state of the art wideband high power operational amplifier designed to drive resistive, capacitive or inductive loads. For optimum linearity the

k1365

Contextual Info: TOSHIBA 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII .5 2 S K 1 365 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING PO W ER SUPPLY APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5 .8 ± 0 .5 | • Low Drain-Source ONResistance

Contextual Info: 2 « tt HS-65758RH HS-65759RH HARRIS S E M IC ON DU CTOR Radiation Hardened 32K x 8 SOI CMOS Static RAM PRELIMINARY July 1992 Features Pinouts • 0.8 Micron Radiation Hardened SOI CMOS - Total Dose 1 x 10s RAD Si - Transient Upset 1 x 1011 RAD (Siys

256Mbyte DDR SDRAM with 64bit data bus

Abstract: PC133 133Mhz cl3 ELPIDA ECT-TS-0198 hitachi part numbering DDR266B DDR200 DDR266A hitachi part "numbering" RDRAM
Contextual Info: Hitachi & NEC DRAM Part Numbering System Elpida Memory, Inc. 2000, 2001 ECT-TS-0198 December 13, 2001 1. Hitachi DRAM Component Parts Numbering System e.g. 256Mbit SDRAM HM 52 25 40 5 B L TT 1) (2) (3) (4) (5) (6)(7) (8) (1)Hitachi IC Memory A6 (9) (2)Product Family

dual TMB 1800

Abstract: chopper trans 60NS MOSFET 50 amp 1000 volt MOSFET RF P-channel VHF low noise dual P-Channel JFET
Contextual Info: N T E ELE CTRONICS INC SSE D bMaiSST 000Sb2S TMb BIN TE T -tt-O l DWER MOS Fi Gatato Source Cutott Voltage Volta Gate to Source Breakdown Voltage (Volt») Maximum Continuous Drain Currant (Amp*) BVosa ±20 Max >D ros(On) 12 0.18 Max case Styl« Di»g. Number

odv marking

Contextual Info: TO SHIBA 2SK2607 TOSHIBA FIELD EFFECT TRANSISTOR SILICON IM CHANNEL MOS TYPE tt-MOSIII 2SK26Q7 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

MTM13N50E

Abstract: MTM13N50 40N20 MOSFET IRF250 TM12P10 55n10 mtm6n80 15N20 MTM7N50 mtm15n40e
Contextual Info: TT TMOS TMOS Power MOSFETs Metal Packages — TO-204AA/AE 0 40" 060" TO-204AA CASE 1-07 Table 6 — P-Channel Voss Volts Min 100 RDS(on) ID (Ohms) (Amps) Max TO-204AE CASE 197A-03 Table 7 — N-Channel Device •d (cont) Amps Pd * (Watts) Max VDSS (Volts)

UFT125

Abstract: UFT12505 UFT12510 UFT12515 UFT12620 UFT12630 UFT12640 UFT12650 UFT12760 UFT12770
Contextual Info: Ultrafast Recovery Modules UFT125. 126 & 127 ¥ Baseplate A=Common Anode ti Baseplate Common Cathode u — *"1 1 1 / T É i - 'r 1 °-N—i—N-o W ic Baseplate D=Doubler TT Notes: — I V [E \ ! Dim. Inches A Min. Max. — 3.630 0.800 0.630 0.130 0.510 B 0.700

epap 420

Abstract: BP3303
Contextual Info: BP3303/BP3304 BP3303/BP3304 BP3303/BP3304 IJ, * > 7 v 7 $ < TJl>, h r-r„ A > K t ^h, * - # - m z ftta tz tc tt-? * Multifunction Telephone Sets BP3303 and BP3304 are telephone units with abbrevi­ ated dialing, onhook dialing and holding with melody. You can complete a telephoneset only by adding hand­

Contextual Info: “HYUNDAI HY51V4810B Series 5 1 2 K x 8 -b tt CM O S DRAM w it h W r it e - P e r - B it PRELIMINARY DESCRIPTION The HY51V4810B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4810B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

6 pin pulse transformer 4503 circuit diagram

Abstract: l0534 HCPL 601 motor IG 2200 19 x 00 15 r ADC60-08 L4562 BD transistor smd Optocoupler 601 8 pin smd l0631 l0601
Contextual Info: Optocoupler Preference Guide . • • • • * *•••* ••• • • •. . * • • • * ’• Agilent Technologies •• ? *. Innovating the HP Way Introducing A g ile n t Technologies, the result of H e w le tt-P a c k a rd 's stra te g ic re a lig n m e n t of its

BI 370

Abstract: 2SK1878 LM9005 2501L 2SK1852 2SK1853 2SK1859 2SK1862 2SK1863 BA 5810
Contextual Info: - 124 - f £ tt % ffl & m S m * ê JV K V m * (V) * * M 3 & 1 * (A) * P d /P c h Ig s s (max) (W) (A) Vg s (V) (min) (max) Vos (A) (A) (V) fó Í# 1*È (Ta=25‘ C) (min) (V) (max) Vos (V) (V) (min) (S) Id (A) Vd s (V) % ? Id (A) 2SK1852 NEC SW.Motor-D

FHX04FA

Abstract: 3SK71 FHR10X 3SK38 FHR01FH FHX05FA 3SK38A NEC 2501L 4AK15 4AK17
Contextual Info: - 130 - ft f m % tt m m € * 1 % K V* V, m * * tit /E Vg s * E % * (V (A) « » * P d /P c h (W) S (Ta=25,C ) 14 . Ig s s (max) (A) Vg s (V) (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) c (min) (typ) Vd s (S) (s) (V) Id (A) Id (A) Chop

H 9311

Abstract: r519 HZM10N HZM11N HZM12N HZM13N HZM15N HZM18N HZM20N HZM22N
Contextual Info: - 234- x t« H ffí £ tt £ P iW (»A) siin typ nax Iz(mA) (Q ) ln S J. Ite j » ji p tm Zzkinax Zzraax Vz (V) Iz L. A r it m iz Iz (mA) (Q ) Vz ÉD * IR 'JAt n m m Iz(mA) (%/°C) Umax ik ft * ffe © # ft m ( ß A) Vr (V) B HZM3.6N HZM3.9N HZM4 3N HZM4.7N

2SJ18

Abstract: 2SJ174 HA 1350S 2S1189 2S119 2sj196 mos-mcs 2SJ170 2SJ171 2SJ172
Contextual Info: - 22 - m % ft € m & m ss f t t % * K V ± * ft Ê (V) ft * tt ft (A) P d /P c h (W) Ig s s (max) (A) Vg s (V) % M (min) (max) Vd s (A) (V) (A) ft t*È (Ta=25‘ C) (min) (max) V d s (V) (V) (V) Id (A) (min) (S) Vds (V) Id (A) 2SJ170 0 * SW-Reg, DDC MOS

2SK779

Abstract: 2SK794 2sk792 2SK777 2sk718 2SK775 2SK791 k796a 2SK790 2SK786
Contextual Info: Üi f m. s *± ffl € iâ m ü Y % % a . Ÿâ îÈ . K V m * % * (V) (A) s : P d /Pc h ! * * (W) ÍG S S (max) (A) Vg s (V) 6<i (min) (max) Vd s (A) (V) (A) tt ^ (13=25*0 (min) (max) Vd s (V) (V) (V) (min) (S) % ? Id (A) Vd s (V) Id (A) 2SK774 NEC SW

2SK839

Abstract: K818A K809A 2SK834 2SK828 2SK813 2SK814 2SK817 S09A 2SK810
Contextual Info: - 70 - ito Hi M tt m € & m m 1 5e! V * S ?£ P d /P c h m * K A (V) * (A) * (W) Ig s s (max) (A) Vg s (V) te % (rain) (max) V d s (A) (A) (V) (min) (V) (Ta=25?C) (max) V d s (V) (V) (min) (S) Id (A) Vd s (V) Id (A) 2SK805 DDC, Motor-D MOS N E 200 DSS

H 9311

Abstract: r519 HZM10N HZM11N HZM12N HZM13N HZM15N HZM18N HZM20N HZM22N
Contextual Info: - 234- x t« H ffí £ tt £ P iW (»A) siin typ nax Iz(mA) ( Q) ln S J. Ite j » ji p tm Zzkinax Zzraax Vz (V) Iz L. A r it m iz Iz (mA) (Q ) Vz ÉD * IR 'JAt nm m Iz(mA) (%/°C) Umax ik ft * ffe © # ft m ( ß A) Vr (V) B HZM3.6N HZM3.9N HZM4 3N HZM4.7N