PMC-2021518
Abstract: No abstract text available
Text: ob er ,2 00 4 12 :5 3: 45 PM HDLIU 32 Hardware Specification Preliminary sd ay ,2 8O ct PM4329 in er In co n Th ur HDLIU 32 Preliminary Issue No. 3: September, 2004 Do wn lo ad ed by C on te n tT ea m of Pa rtm Hardware Specification Proprietary and Confidential to PMC-Sierra, Inc., and for its customers’ internal use.
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PM4329
PMC-2031990,
PMC-2021518
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inversor dc a ac
Abstract: inversor VAL-CP-2S-175 VAL-CP-350 inversor ac dc LA 350 VAL-CP-350-ST
Text: 9660549_VAL_CP_S_175.fm Seite 1 Montag, 26. September 2005 12:12 12 VALVETRAB compact Installations Instructions RS System UN ZBFM 5 VAL-CP-3S-175 28 59 45 3 VAL-CP-2S-175 28 59 49 5 VAL-CP-1S-175 28 59 47 9 TN-S/TT L1, L2, L3, N, PE 120 V AC/208 V AC 50/60 Hz
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VAL-CP-3S-175
VAL-CP-1S-175
AC/208
VAL-CP-2S-175
AC/150
kA/20
kA/40
inversor dc a ac
inversor
VAL-CP-2S-175
VAL-CP-350
inversor ac dc
LA 350
VAL-CP-350-ST
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0X144
Abstract: No abstract text available
Text: 45 AM S/UNI ATLAS 3200 ATM Layer Solution ASSP Data Sheet Released y, 20 03 06 :2 8: PM7325 id ay ,0 7F eb ru ar S/UNI® ATLAS™ 3200 in er In co n Fr OC-48 S/UNI ATM Layer Solution Released Issue No. 5: January 2003 Do wn lo ad e d by Co nt en tT ea
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OC-48
PMC-1990553,
PM7325
0X144
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Untitled
Abstract: No abstract text available
Text: Multi-pole Surge Arrester DVSC400 45 4 TT •max = 45fcA peepole 8/20 TT Network (Ihras-phasa) fï H =h - B - B - LI L2 U N • - LI - L2 ■ is * • • * ¡i Fä[] [] [] o o FFcnc i- . T. J Connection diagram Technical data DVSC400454TT Type yf In accordance with
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DVSC400
45fcA
DVSC400454TT
320/420V
100Arm
/100n*
20/20kA
125AgL/
125mma
UL94V-0
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MCM6249-30
Abstract: MCM6249-25 MCM6249-35
Text: - 4M X j& g ie B l g £ tt 45 CC TAAC max ns) TCAC max (ns) TOE nax (ns) CMOS A * T0H min (ns) S t a t i c v TOD nax (ns) 7 TWP min (ns) « R A M (1, 0 48, 5 7 6 x 4 ) tt TDS ii n (ns) 3 2 P I N X TC'H nin (ns) TttD •in (ns) TWR nax (ns) VDD o r VCC (V)
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576x4)
MCM6249-25
MCM6249-30
MCM6249-35
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CPT60135
Abstract: CPT60140 CPT60145
Text: Schottky PowerMod CPT601 35 ¥ Baseplate A=Common Anode V Baseplate Common Cathode t"1 1 u 1 — / t \ 141 ! - T / r '\l r ! t i ° °-N - TT E Notes: - I Baseplate D=Doubler CPT601 45 Dim. Inches Min. A B c E F G H N Q R U V W Max. -3.630 0.700 0.800
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CPT60145
10000E
CPT60135
CPT60140
CPT60145
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359RGA
Abstract: SM6J45 SM6D45 SM6D45A SM6G45 SM6G45A SM6J45A 4a2d
Text: - SM6 D, G, Jj45 TT-6 • 139 - * 2 I 3 - I OG I A c fo r n a i 6 A, 200 Y 600 V ( L , = 25 °C ) n S lt t f t t t O T O - 220 A B / ' y * r — :J le I drm Vt m S M 6 D 45 S M 6 G 45 S M 6 J 45 200 400 600 V d sm m T j — 125 ”C , 60 ( 50 H z, I 2 ■t
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00V-MOV
OTO-220AB/V
SM6D45
SM6G45
SM6J45
H-101
359RGA
SM6J45
SM6D45A
SM6G45A
SM6J45A
4a2d
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CPT50130
Abstract: CPT50135 CPT50140 CPT50145
Text: Schottky PowerMod CPT501 30 ¥ Baseplate A=Common Anode V t"1 1 u 1 T — / t W - Baseplate Common Cathode Í» r 1 t i °-N - c TT E Notes: 141 - I Baseplate D=Doubler CPT501 45 Dim. Inches Min. A B c E F G H N Q R U V W M illim eters Max. -3.630 0.700
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CPT50145
CPT50130*
CPT50135*
CPT50140*
CPT50145*
CPT50130
CPT50135
CPT50140
CPT50145
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Untitled
Abstract: No abstract text available
Text: • 4 3 0 E!2 7 1 Q0SM3M0 TT? ■ HAS R FM 6N 45/6N 50 RFP6N 45/6N 50 H a r r is N-Channel Enhancement Mode Power Field Effect Transistors A u g u st 1991 Features Packages TO-204AA • 6A, 450V and 500V • rDS{on = 1 .2 5 0 • SOA is P ow er-D issipation Lim ited
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45/6N
O-204AA
O-220AB
O-204AA
TQ-220AB
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LH5911
Abstract: IDT7132LA-100 IDT7132LA-120 IDT7132LA-25 IDT7132LA-30 IDT7132LA-35 IDT7132LA-45 IDT7132LA-55 IDT7132LA-70 IDT7132LA-90
Text: - 1 6 K CMOS m. 45 tt fi x fC TAAC max ns) TCAC max (ns) >f TOH rain (ns) • •/ f- TOD max (ns) TWP y D ual-P ort y & (ns) T DS min (ns) R A M (2. 048 X 8) 4 8 P ! N 7 1 3 2 / 4 2 tt M m TDH min (ns) TBAC max (ns) TBO max (ns) TBW min (ns) V D D or V C C
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IDT7132LA-100
IDT7132LA-120
IDT7132LA-25
LH5911-35
LH5911-45
LH5911-55
LH5914-35
LH5914-45
LH5914-55
LH5911
IDT7132LA-30
IDT7132LA-35
IDT7132LA-45
IDT7132LA-55
IDT7132LA-70
IDT7132LA-90
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E81956
Abstract: R2000 5-558530-3 ECD-08-011018 5-558530-1
Text: 4 TH IS DRAWING IS U N P U B L IS H E D . COPYRIGHT D 3 RELEA S ED BY TYCO ELECTRONICS CORPORATION. 9 . 53 [.3 75 ] FOR ALL PUBLIC ATIO N RIGHTS R E S ER V ED . •LOAD BAR 8.26 [.3 25 ] TT—Th—n—n—n—n—n—jfr— 2.69 — [ . 106] C 1.15 [.0 45 ]
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S4MZ\R2000
06SER2005
ECD-08-007212
31MAR08
ECD-08-011018
05MAY08
00CKAGE.
E81956
R2000
5-558530-3
5-558530-1
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AMP 1-480424-0
Abstract: No abstract text available
Text: TT 2 3 . 7- o 00 f REF 5 .3 r ? t r i n p f n r ? f n r i f o . 5. 45 02. 3 2PLACES £3— e 1— 4 . 2 3 t- ' ± CTOLERANCE 11.5 O v o OF . i PITCH ±0.1) I— I er H (PCB LD LAYOUT CREFD) ?£ 1. ^ >• 2. : P/N 1-480424-0 : 108-5155 3. : Î . 6mm NOTES
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CFJ00-0947-99)
L94-V
AMP 1-480424-0
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S6080
Abstract: No abstract text available
Text: -j'j vvv'ds-v 7:n.7,ii>'fy:ÿ'fy§ë. Dual In-line Package Bridge Diode OUTLINE DIMENSIONS S1NBC 800V 1.5A 45 £1 •/J\lÜDIPA"'.y'7— y •g Ü H tg fc ttö MMfàM RATINGS Absolute Maximum Ratings * I Ite m Storage Temperature » -& 8 & B K Operating Junction Temperature
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324mm2
J514-5
S6080
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Untitled
Abstract: No abstract text available
Text: M O S E L V tT E U C V53C 16256H 2 5 6 K X 16 C M O S D Y N A M IC R A M W ITH S E L F R E FR E S H P R E LIM IN A R Y HIGH PERFORMANCE 45 Max. RAS Access Time, tRA0 45 ns Max. Column Address Access Time, (tc ^ ) 22 ns 50 55 60 50 ns 55 ns 60 ns 25 ns 28 ns
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16256H
16-bit
40-pin
V53C16256H
V53C16256H
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55bt
Abstract: No abstract text available
Text: 1 — - j '— -T — 01 1 1 1 1 J DIM MILLIMETER A 20.32 14.27 B C D 18.03 5.8 4 E F G H 1 3.05 1.02 x 45° 5.8 4 4.57 0.13 J K M N 3.30 1.52 1.27 3.30 DIA K TOL .13 .13 INCHES .800 .562 TOL .005 .005 MIN .13 .710 .230 MIN .005 .130 .060 .050 .130 DIA TT
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55BTR
55bt
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1xys
Abstract: IXTN36N50 36N50 E72873 IXTN36N45
Text: • 4bûbE2b 0001Û11 TTñ ■ I X Y □IXYS Pow er M O S F E T IX TN 36N 45 IX TN 36N 50 N-Channel Enhancement Mode Symbol Test Conditions V oss T j = 25°C to 150°C Maximum Ratings IXTN36N45 IXTN36N50 450 500 V V V oc* ^ = 25°C to 150°C ;R es=10kQ 500
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IXTN36N45
IXTN36N50
IXTN36N45
Cto150Â
IXTN36N
D-68619;
1xys
IXTN36N50
36N50
E72873
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mtp2p45
Abstract: TP2P45 45MTP 314B03 HF 1932
Text: MOT OROL A SC XSTRS/R b3b7254 F GDTñbHH 224 • MOTOROLA ■ SEM ICO NDUCTOR TECHNICAL DATA M TP 2P 45 M TP 2P 50 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r P-Channel Enhancement-Mode Silicon Gate TT These TMOS Power FETs are designed fo r medium voltage,
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b3b7254
MTP2P50
21A-06
O-220AB)
Y145M
221D-02
O-220
Y145M,
AND-02
314B03
mtp2p45
TP2P45
45MTP
HF 1932
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s15vb
Abstract: No abstract text available
Text: SQ I PS! 7 'J Bridge Diode Square In-line Package • fl-fiN -JÄ H OUTLINE DIMENSIONS Package : S15VB S15VB 600V 15A 45 £1 + Plastic body w ith back A l h eat transfer plate. ■ Unit : mm « fiL tC D S n îE O L Y C B :, }£ E P tt« £ C !B 1 8 <
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S15VB
S15VB20
S15VB60
50HZJESÄ
J514-5
S15VBD
s15vb
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transistor su 312
Abstract: No abstract text available
Text: W a t k i n s - J o h n s o n : T h e C e l l E x t e n d e r s Power Amplifiers SA1068 C D M A 1 0 .0 -W a tt 1.93 G H z to 1.99 G H z L in e a r P o w e r A m p lifie r M o d u le • ■ 45 iB Sain PláB:+48 dBm atkins-Johnson’s SA1068 Power W Amplifier provides exceptional
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SA1068
SA1068
transistor su 312
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WATKINS-JOHNSON
Abstract: No abstract text available
Text: W a t k i n s - J o h n s o n : The Ce l l E x t e n d e r s Power Amplifiers SA1106 T D M A 4 0 -W a tt 1.93 G H z to 1.99 G H z L in e a r P o w e r A m p lifie r M o d u le - 40 Watts TOMA IS-136 • +48d0mP1dB ■ 45 iB Bain ■ -30°B to +85°C W atkins-Johnson’s SA1106 Power Amplifier
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SA1106
IS-136
48d0mP1dB
SA1106
WATKINS-JOHNSON
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Untitled
Abstract: No abstract text available
Text: Alle Rechte vorbehalten/ i l l rights re strni 2 A Montageausschn i tt panel cut out 3 4 5 6 m i n . 23 1 9 , 2 ±0, 1 -ds CVI CVI — f- max . R 1 , 2 5 2 T \ b e z o g e n a u f d i e R J 45 B u c h s e V -J re l a t e d to PJ45 jack / 7 \ b e z o g e n a u f PCB
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Untitled
Abstract: No abstract text available
Text: TT WMS128K8-XXX M/HITE M IC R O E L E C T R O N IC S 128Kx8 MONOLITHIC SRAM PRELIMINARY * FEATURES • M IL-STD -883 Com pliant D evices A v a ila b le ■ A c c e ss T im e s 17, 20, 25, 35, 45, 55nS ■ Co m m ercial, Ind ustrial and M ilita ry Tem perature Range
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WMS128K8-XXX
128Kx8
IL-STD-883
128Kx
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Untitled
Abstract: No abstract text available
Text: î/y ^ n /'fy ^ 'fy M - j'j v V ÿ 'C t - F Bridge Diode Single In-line Package OUTLINE DIMENSIONS Package : 5S D5SBD TO 800V 6A 45 £1 •»süsiPA’y 'r - y •U L 1 S W U L File No,E 1 4 2 4 2 2 (D © Unit : mm («fiLtCDSâSEOLYCB:, }£ E P tt« £ C !B 1 8 < f c 'Î U )
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J514-5
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vds3v
Abstract: 2SK274 2SK276
Text: 'M l- Ç fflG a A s A - * tt i i II ft ft * # M G F 13 0 5 3 V I d s s (mA) 13.00 30.00 45. 00 f f l ü : SHF Î Î ? S i Vg so (V) gm(mS) 25.00 tf jg : N f t ? * y S 7 l ' + ^ ' j r y - I d ( üA) G sl(d B )* 13.00 F GaAs FET. • ÌS^IetÌb!£o ifiiüf^o
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12GHz
2SK274)
10jiA,
10hiA,
vds3v
2SK274
2SK276
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