TYP 256 Search Results

Contextual Info: 8.50 [.335] 1.50 [.059] 0.80 [.031] Typ. 2.00 [.079] Typ. 2 13.80 [.543] 5.00 [.197] 1 12.00 [.472] 3 6.50 [.256] 9.00 [.354] 5.50 [.217] 0.50 [.020] Typ. 4.00 [.157] Typ. 8.50 [.335] 3.50 [.138] 2.00 [.079] Typ. 4.00 [.157] 12.00 [.472] 0.50 [.020] Typ. 0.40

908-21103

Abstract: V908 jack 3,5 pcb
Contextual Info: MicroMate MMCX PCB Mount Amphenol Fig. 1 Fig. 2 .175 (4.45) .110 (2.79) .020 SQ. (0.5) .100 TYP (2.54) .120 (3.05) .138 SQ. (3.5) .100 (2.54) .050 TYP (1.27) .020 SQ TYP (0.51) MICROMATE PLUG INTERFACE .100 (2.54) Ø.028 (0.72) .256 (6.5) .050 TYP (1.27)

Contextual Info: 2.54 TYP. 5.5 10.3 1.27 D C A 1.90+/-0.05 TYP .3 4.8 12.0 2.54 5.0 3.45 E 1.9 TYP .3 #2-56 UNC #4-40 UNC THREADED HOLE B O 3.0 TYP. 2 2.54+/-0.05 TYP. 8.00+/-0.05 3.0 TYP. D+/-0.1 A+/-0.1 1.27+/-0.05 TYP. O 0.80+/-0.05 TYP. Recommended P.C. Board Layout DIMENSION mm

t06 sot 23

Abstract: UPC2710 upc2713
Contextual Info: RF 1C Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL CHARACTERISTICS’ f t * • 25“C Typical Fraquancy Hangs Vcc 93H B V) Pan Numbar MIN 9m NF (dB) Icc <mA) TYP MAX Gain RLin RLout PldB ISOL (dB) (dB) (dB) (dBm) (dB) TYP TYP TYP TYP TYP MIN TYP MAX Pfeg.

IS61LV2568L

Abstract: IS61LV2568L-8B IS61LV2568L-8K IS61LV2568LL S61LV256
Contextual Info: IS61LV2568L IS61LV2568LL ISSI 256K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: IS61LV2568L: 8, 10 ns IS61LV2568LL: 12 ns • Operating Current: IS61LV2568L: 50mA typ. IS61LV2568LL: 30mA (typ.) • Standby Current: IS61LV2568L: 700µA (typ.)

Contextual Info: PARADIGM 256K Static RAM 256K x 1-Bit PDM41257S PDM41257L Features Description □ High speed access times Com'l: 15,20,25,35 and 45ns M il: 20,25,35,45, and 55ns □ Low power operation - PDM41257S Active: 400mW typ. Standby: 150mW (typ.) - PDM41257L Active: 350mW (typ.)

mmic a08

Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18

AS6C2008

Abstract: AS6C2008-55STIN
Contextual Info: February 2007 AS6C2008 Rev. 1.1 256K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time : 55ns Low power consumption: Operating current :20mA TYP. Standby current : 20mA(TYP.)L Version 1µ A (TYP.) LL-version Single 2.7V ~ 3.6V power supply

dp3t Alcoswitch

Abstract: STS-230-PC
Contextual Info: STS/STSA Series Slide Switches, Miniature, Low Profile, Economy Grade SEE PAGE B13 FOR PRODUCT SPECIFICATIONS DPDT .098 2.50 TRAVEL TYP B 12 .098 (2.50) .197 (5.00) Slide Switches STS/STSA Series .098 (2.50) TYP .035 DIA (0.90) TYP P. C. HOLE LAYOUT .256

Contextual Info: B D 2.54 .100 C 1.90±0.05 TYP.3 .075±.002 10.3 .406 5.5 .217 A A±0.1 1.27±0.05 TYP. .050±.002 #2-56 UNC #4-40 UNC OR TYP .2 THREADED HOLE 3.2 .126 E 4.8 .189 8.8 .346 3.5 .138 1.27 TYP. .050 2.54±0.05 TYP. .100±.002 1.90 TYP.3 .075 HOW TO ORDER: S DIMENSION mm

LF155A

Contextual Info: Monolithic JFET Input Operational Amplifiers 155/155A 156/156A 157/157A DC ELECTRICAL CHARACTERISTICS LF155A/355A LF155/265 PARAMETER v s = ± 15V, t a = 25°C LF156A/356A LF355 L F I 57 A/357A LF156/256 LF356 LF157/257 LF357 UNITS TYP MAX TYP MAX TYP MAX

alcoswitch

Abstract: MSSA4350RG MSSA3350R MSSA4450R DP3T mss6350 MSSA2450
Contextual Info: MSS Series Slide Switches, Instrumentation Grade SEE PAGE B20 FOR PRODUCT SPECIFICATIONS 4P3T .059 1.50 DIA. TYP. NO. 53 DRILL B 1 Slide Switches MSS Series 1 2 1 2 2 3 1 2 3 3 .157 (4.00) TYP. .157 (4.00) TYP. .302 (7.67) TYP. .016 (0.41) .079 (2.00) TYP.

Contextual Info: P ow er S p u tters/C o m b in ers 50 & 75Q 4 WaY-0° 2 kHz to8.4 GHz ZBSC-4 ZCSC-4 FREQ. RANGE MHz MODEL NO. ISOLATION dB L V fu Typ. Min M ZFSC-4 INSERTION LOSS, dB Above 6dB U L Typ. Min. Typ. Min. M PHASE UNBALANCE Degrees L U Typ. Max. Typ. Max. Typ. Max.

Contextual Info: LY62L25616 256K X 16 BIT LOW POWER CMOS SRAM Rev. 2.0 FEATURES GENERAL DESCRIPTION „ Fast access time : 45/55/70ns „ Low power consumption: Operating current : 40/30/20mA TYP. Standby current : 20 A (TYP.) L-version 2μA (TYP.) LL-version „ Single 2.7V ~ 3.6V power supply

Contextual Info: Miro-D Plastic Shell - .050" Contact Spacing MD Panel Cutouts D TYP. C B FULL R. TYP. .015 (0.38)R. MAX.(TYP) A Figure 1 Front Mounting C .075 (1.91) A D + .005 (0.13) R TYP - .000 (0.00) B FULL R. (TYP.) 26˚/27˚TYP Figure 2 Rear Mounting C .450+ _.002

Contextual Info: FTS621256-45XX 256K X 1 High Speed CMOS SRAM United Kingdom Features Pin Description • Single 5 V supply and high density 24-pin package • High speed Access time: 25/35/45 ns max • Low power  Operation: 300 mW (typ)  Standby: 100 µW (typ) 30 µW (typ) (L-version)

Hitachi DSA00164

Contextual Info: HM6207H Series 256 k High Speed SRAM 256-kword x 1-bit Features • Single 5 V supply and high density 24-pin package • High speed Access time: 25/35/45 ns (max) • Low power  Operation: 300 mW (typ)  Standby: 100 µW (typ) 30 µW (typ) (L-version)

HM6207H

Abstract: HM6207HJP-25 HM6207HJP-35 HM6207HJP-45 HM6207HLJP-25 HM6207HLP-25 HM6207HLP-35 HM6207HLP-45 HM6207HP-25 HM6207HP-35
Contextual Info: HM6207H Series 256 k High Speed SRAM 256-kword x 1-bit Features • Single 5 V supply and high density 24-pin package • High speed Access time: 25/35/45 ns (max) • Low power  Operation: 300 mW (typ)  Standby: 100 µW (typ) 30 µW (typ) (L-version)

Contextual Info: CSC2611 NPN PLASTIC POWER TRANSISTOR High voltage Amplifier and TV Video Output PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2 .25 TYP. 0 .49 0.75 C 4 .5 TYP. L 15.7 TYP. M 1.27 TYP. N 3 .7 5 TYP.

Contextual Info: 5.60±0.13 10.30±0.25 2.54 63.88±0.38 57.91±0.25 Insulator Material: PBT with glass fiber reinforcement, UL 94V-0 rated, black color 46.13±0.25 1.27 typ. 1 Contact Plating: gold plated over nickel underplate 41.91 1.27 typ. 1.905 typ. 2.54 typ. Shell Material:

Contextual Info: WJ-RA62/SMRA62 2000 to 6000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRAWIDE BANDWIDTH: 1.5-6.2 GHz TYP. MEDIUM GAIN: 16.0 dB (TYP.) MEDIUM OUTPUT POWER: +13.0 dBm (TYP.) LOW NOISE FIGURE: 4.0 dB (TYP.) Outline Drawings

Contextual Info: Page:1/1 Update: January 9, 2015 High Speed SRAM Density 64K Configuration 8K x 8 Power Supply 5V 5V 256K Item No. Speed ns LY6164 Isb 12/15 1.0mA(typ) LY61256 12/15 0.5mA(typ) Operating Temp. (*1) Data Sheet C/E/I C/E/I 32K × 8 3.3V LY61L256 12/15 0.5mA(typ)

Contextual Info: FLM1414-4F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω

c 4977 transistor

Contextual Info: WJ-PA3 / SMPA3 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER: +24.5 dBm TYP. @ +15Vdc ♦ HIGH THIRD ORDER INTERCEPT POINT: +34 dBm (TYP.) ♦ MEDIUM GAIN: 14.5 dB (TYP.) ♦ LOW VSWR: < 1.5:1 (TYP.) Outline Drawings