PDM41257 Search Results

Contextual Info: PDM41257 256K Static RAM 256K x 1-Bit Description Features n High-speed access times Com’l: 7, 8, 10, 12 and 15 ns Industrial: 8, 10, 12 and 15 ns n Low power operation typical - PDM41257SA Active: 400 mW Standby: 150 mW - PDM41257LA Active: 350 mW Standby: 25 mW

Contextual Info: Pa r a d ig m PDM41257 256K Static RAM 256K x 1-Bit Features D escription □ High speed access times Com'l: 8 ,1 0 ,1 2 ,1 5 , 20 and 25 ns Industrial: 10,12,15, 20, and 25 ns The PDM41257 is a high-performance CMOS static RAM organized as 262,144 x 1 bits. This product is

Contextual Info: PDM41257 256K Static RAM 256K x 1-Bit 1 Features Description • High-speed access times Com’l: 7, 8, 10, 12 and 15 ns Industrial: 8, 10, 12 and 15 ns The PDM41257 is a high-performance CMOS static RAM organized as 262,144 x 1 bit. This product is produced in Paradigm’s proprietary CMOS

PDM41257

Contextual Info: Paradigm PDM41257 256K Static RAM 256K x 1-Bit Features Description □ High-speed access times Com'l: 7, 8 ,1 0 ,1 2 and 15 ns Industrial: 8 ,1 0 ,1 2 and 15 ns The PDM41257 is a high-performance CMOS static RAM organized as 262,144 x 1 bit. This product is

DIN 41257 GPF

Contextual Info: PARADIGM TECHNOLOGY INC b e141DciO 0 D 0 0 0 4 1 T a*!E D H I ~ r^ 6 Z 3 256K Static RAM 256K x 1-Bit 0 5 PDM41257S PDM41257L Features Description □ High speed access times Com'l: 15/20,25,35 and 45ns M il: 20,25,35,45, and 55ns □ Low power operation - PDM41257S

din 41257

Abstract: 41257 C001 ZI170 PDM41257
Contextual Info: 256K Static RAM 256K x 1-Bit PDM41257SA PDM41257LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 12,15,20, 25,35,45, and 55ns □ Low power operation - PDM41257SA Active: 400mW typ. Standby: 150 mW (typ.) - PDM41257LA

Contextual Info: PARADIGM 256K Static RAM 256K x 1-Bit PDM41257S PDM41257L Features Description □ High speed access times Com'l: 15,20,25,35 and 45ns M il: 20,25,35,45, and 55ns □ Low power operation - PDM41257S Active: 400mW typ. Standby: 150mW (typ.) - PDM41257L Active: 350mW (typ.)

Contextual Info: PDM41257SA PDM41257LA Paradigm ' b^MlD^Q GDDÜ33S 414 « P A T M ö K Strtie RAM 256K x 1-Bit Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 1 2 ,1 5 ,2 0 ,2 5 , and 35ns Industrial: 1 2 ,1 5 ,2 0 ,2 5 , and 35ns

Contextual Info: PARADIGM TECHNOLOGY I NC SGE D bTMlO^O OOOOOH 3 « P A T i T ^ V PARADEN! 256K Static RAM 256K x 1-Bit o S PDM41257SA PDM41257LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 1 2 ,1 5 ,2 0 ,2 5 , 35,4 5 , and 55ns

Contextual Info: Paradigm ' PDM41257 256K Static RAM 256K x 1-Bit Features Description □ High-speed access times Com'l: 7, 8 ,10,12 and 15 ns Industrial: 8 ,10,12 and 15 ns The PDM41257 is a high-performance CMOS static RAM organized as 262,144 x 1 bit. Writing to this device is accomplished when the write enable WE

simm 72 pinout

Contextual Info: Product Line of Memory Products Paradigm Asynchronous SRAM Organization Device Type Voltage Pin Count Acess Time ns Packages Available Comments 256K PDM41256 PDM31256 PDM41257 5V 3.3V 5V 8,10,12,15 8,10,12,15,20 10, 12, 15, 20 28 28 24 SO, T (Type I) SO, T (Type I)

Contextual Info: p a r a d k m 256K Static RAM 256K x 1-Bit PDM41257SA PDM41257LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 1 2 ,1 5 ,2 0 ,2 5 ,3 5 ,4 5 , and 55ns □ Low power operation - PDM41257SA Active: 400mW typ. Standby: 150 mW (typ.)

PDM31564

Abstract: 32KX8 64KX16 PDM31048LL PDM31096 PDM31096LL simm 72 pinout 256KX8 SIMM 256kx8 sram 5v
Contextual Info: PRODUCT SELECTOR GUIDE Asynchronous SRAM ORGANIZATION DEVICE TYPE VOLTAGE A CESS TIME NS PIN COUNT PACKAGES AVAILABLE COMMENTS 256K 32Kx8 32Kx8 32KX8 32Kx8 256Kx1 PDM41256 PDM31256 PDM31256LL PDM21256LL PDM41257 5V 3.3V 3.3V 2.7V 5V 8, 10, 12, 15 8, 10, 12, 15, 20

Contextual Info: PARADIGM 256K Static RAM 256K x 1-Bit PDM 41257SA PDM 41257LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 12,15, 20,25, 35,45, and 55ns □ Low power operation - PDM41257SA Active: 400mW typ. Standby: 150 mW (typ.)

Contextual Info: PARADIGM Product Family MODULES Secondary Level Cache Modules Static RAM Modules • • • • • • • • PDM4M096S PDM4M096L PDM4M4030 PDM4M4040 PDM4M4050 PDM4M4060 PDM4M4110 PDM4M4120 512K x 8 Asynchronous (512K x 8 Asynchronous) (64Kx 32 Asynchronous)

km681001j-20

Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Contextual Info: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

TMS6207-35

Abstract: 24PIN MT5C2561-20 MT5C2561-30 MT5C2561-35 MT5C2561-45 PDM41257LA-12 PDM41257LA-15 PDM41257LA-1D 24PIN 1800
Contextual Info: - 108 — 2 5 6 K m £ £ i&mm CO A 4 TAAC •ax ns TCAC max (ns) TOE max (ns) CMOS S t a t i c RAM ( 2 6 21 4 4 x 1 ) 2 4 P I N À 7 f TOH •in (ns) TOD ■ax (ns) TWP ■in (ns) TDS miri (ns) TDH •in (ns) TWD ■in (ns) TUR max (ns) V D D or V C C (V)

MT5C2568

Abstract: 16kx4 8833 256kx1 IDT7188 41024 84256 CY7C PDM41024 EDI88130
Contextual Info: SRAM FUNCTIONAL CROSS REFERENCE GUIDE NOTE: This guide reflects functional correlation only. Refer to individual data sheets to ensure that the device meets your requirements. CYPRESS AUSTIN DESCRIPTION IDT AUSTIN DESCRIPTION CY7C 106 MT5C1005 256Kx40E IDT61298

PDM41257SA15D

Abstract: Paradigm 41256 PDM41024S20L32 PDM41024-S20L32 PDM41257LA15D MT5C1005C CY7C199-35DMB SRAM Cross Reference EDI84256LPS25TB 41256
Contextual Info: National Semiconductor Part Numbering System N S 41024 L 20 E -SMD Grade Package Code Speed Grade Power Level Device Type /883 MIL-STD-883 Level B AC/DC tested at –55, +25 and +125°C with High Temp Burn-in -SMD DESC Standard Military Drawing AC/DC tested at –55, +25 and +125°C with High Temp Burn-in

IDT CYPRESS CROSS REFERENCE

Abstract: CY7C
Contextual Info: ^ A I S M N SI M 1 C Ü M H t I OR. I NC. C ROSS R E F E R ^ ^ e 'g UIDE SRAM FUNCTIONAL CROSS REFERENCE GUIDE NOTE: This guide reflects functional correlation only. Refer to individual data sheets to ensure that the device meets your requirements. DESCRIPTION