U 324 SAMSUNG Search Results

samsung kmm5322204aw

Abstract: km416c1204aj kmm5322204aw MFJ 224 km416c1204a 2MX32 EDO SIMM Samsung
Contextual Info: DRAM MODULE KMM5322204AW/AWG KMM5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM G E N E R A L D E S C R IP T IO N FEATURES The Samsung KMM5322204AW is a 2M bit x 32 • Part Identification Dynamic RAM high density m em ory m odule. The

km416c1200aj

Abstract: KM416C1200A
Contextual Info: DRAM MODULE KM M5322200A W/AW G KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 D ynamic RAM high density m em ory module. The Samsung KM M 5322200AW consists of four CMOS

KMM5322204AW

Contextual Info: KMM5322204AW DR A M Modul e ELECTRONICS KM M5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322204AW is a 2M bit x 32 Dynamic RAM high density memory module. The

Contextual Info: DRAM MODULE KMM5322200AW/AWG KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200AW consists of four CMOS

Contextual Info: KMM5322200AW DRAM Module ELECTRONICS KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200AW consists of four CMOS

KM416C1200AJ

Contextual Info: DRAM MODULE 8 Mega Byte KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM , 1K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200AW consists of four CMOS

power supply samsung tv

Abstract: ka2105 samsung tv
Contextual Info: SAMSUNG SEM ICOND UC TO R INC Tfl ^ KA2105 7Tb4142 D0041D b 3 ' - T ~ n ~ tn -< n LINEAR INTEGRATED CIRCUIT LIMITER AMPLIFIER AND DETECTOR FOR A TV SIF The KA2105 contains a limitingamplifler and an FM detector in a singlein-line plastic package. This device Is especially recommended as a

power supply 120v- 12v circuit diagram

Abstract: MC1488 SAMSUNG
Contextual Info: SAMSUNG ELE CTRONICS INC 42E D KS5788 • 7 ^ 4 1 4 2 00QT322 1 « S M G K CMOS INTEGRATED CIRCUIT QUAD CMOS LINE DRIVER The KS5788 is designed to interface data terminal equip­ ment DTE with data communications equipment (DCE) in conformance with the specifications of EIA RS-232-Cr

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 'PTbmMS □G170t.G ÔT7 KM23C81 OOB G CMOS MASK ROM 8M-Bit (1M X 8 /5 1 2K X 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576x8 (byte mode) 524,288x16 (word mode) • Fast access time: 100ns (max.)

KS74AHCT

Abstract: U 324 SAMSUNG
Contextual Info: SAMSUNG S E M I CO ND UCTOR INC OS KS54AHCT E G A KS74AHCT w * * D e | 7 T b 4145 0 0 Qfcrlfl1 S | . Octal D-Type Flip-Flops ' with 3-State Outputs FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with 54J74ALS logic family • Low power consumption characteristic of CMOS

FD2S

Abstract: ix 3368 AO222 chapter 4 AO333 STD80 STDM80 jtag samsung FD6S samsung 649
Contextual Info: D • A • T • A • B • O • O • K STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library April 1997 V SAMSUNG SAMSUNG ASIC STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior

samsung kmm5322204aw

Abstract: Samsung 2MX32 EDO simm module KMM5322204a
Contextual Info: DRAM MODULE KMM5322204AW/AWG KMM5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Sam sung KM M 5322204AW is a 2M bit * 32 • Part Identification D ynam ic RAM high density m em ory module. The

KMM5322000BV-6

Abstract: KMM5322000BV6 kmm5322000b KMM5322000BV KMM532200 DU26
Contextual Info: KMM53: ’SÀVJlt BV/BVG DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5322000BV is a 2M bits x 32 Dynam­ ic RAM high density memory module. The Samsung KMM5322000BV consist of sixteen CMOS 1M x 4 bit

KMM581000A

Abstract: KM41C1000AJ KMM481000A-8
Contextual Info: KMM481000A/KMM581000A MEMORY MODULES 1 M x 8 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 1,048,576 x 8-bit Organization • Performance range: The Samsung KMM481000A and KMM581000A are 1 M x 8 dynamic RAM high density memory modules.

lcd power board schematic

Abstract: samsung hdd schematic ICH4-M MAIN BOARD DIAGRAM hdd schematic schematic diagram power sequence schematic diagram samsung schematic diagram of a charger ddr schematic
Contextual Info: 3 System Schematic Diagram 3-1 System Main Board Schematic Diagram Q30 This Document can not be used without Samsung’s authorization. 3-1 3 System Schematic Diagram 3-1-1 a Main Board Schematic Sheet 2 of 47(Block Diagram) 3-2 This Document can not be used without Samsung’s authorization.

SMDK2410

Abstract: LTD79W298L30GK LTV350QV S3C2413 lcd 240x320 OPENice-A1000 SMDK2413 LTV350 S3C2413X ltd79w298
Contextual Info: S3C2413X 32-BIT RISC MICROPROCESSOR APPLICATION NOTE Revision 1.01 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or

Contextual Info: SAMSUNG ELECTRONICS INC h?E D • 7 ^ 4 1 4 2 D 0 1 5 2 7 M 37=5 ■ SI'IGK KMM5364100H/HG DRAM MODULES 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KMM5364100H-6 tR A C tc A c Irc 60ns 15ns 110ns KMM5364100H-7 70ns 20ns

KMM5324

Contextual Info: Preliminary DRAM MODULE KMM5324004ASW/ASWG KMM5324004ASW/ASWG EDO Mode 4M X 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 5324004A is a 4Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KM M 5324004A

KS555

Abstract: KS555 327
Contextual Info: KS555 CMOS INTEGRATED CIRCUIT 8 DIP CMOS SINGLE TIMER The KS555 is a CMOS timer with improved performance over a standard bipolar one. Due to its high-impedance inputs, it is capable of producing accurate time delays and oscillations with less expensive smaller timing

1Mx4

Contextual Info: DRAM MODULE 4 Mega Byte KMM5361203W/WG Fast Page Mode 1Mx36 DRAM SIMM , 1K Refresh, 5V Using 1Mx16 B/W DRAM and 1Mx4 Quad CAS DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5361203W is a 1M bit x 32 Dynamic RAM high density memory module The

S3C2412X

Abstract: S3C2412 Samsung s3c2412 LTV350QV SMDK2410 SMDK2412 usb2412 LTD79W298L30GK 240x320 U241MON
Contextual Info: S3C2412X 32-BIT RISC MICROPROCESSOR APPLICATION NOTE Revision 1.01 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or

KA22471

Contextual Info: LINEAR INTEGRATED CIRCUIT KA22471 FM IF/AM TUNER SYSTEM T h e KA22471 is a m o n o lith ic integrated c irc u it deve lo pe d fo r th e radio ca ssette ta p e recorder. FUNCTIONS • AM S EC TIO N : C onverter, IF am plifier, Detector, Tuning indicator. • FM S E C TIO N : IF am plifier, Q u a d ra tu re detector, Tuning indicator.

Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. Northwest North Central 3655 North First Street San Jose, CA 95134 TEL: 408 954-7000 FAX: (408) 954-7883 Northeast 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: (708) 775-1050 FAX: (708) 775-1058 Southwest

Contextual Info: PRELIMINARY CMOS MASK ROM KM23C16100FP 16M-Bit 2M X 8/1 M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time Random access: 150ns (max.) Page access: 70ns (max.)