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    FD2S

    Abstract: ix 3368 AO222 chapter 4 AO333 STD80 STDM80 jtag samsung FD6S samsung 649
    Text: D • A • T • A • B • O • O • K STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library April 1997 V SAMSUNG SAMSUNG ASIC STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior


    Original     		PDF STD80/STDM80 P1149 FD2S ix 3368 AO222 chapter 4 AO333 STD80 STDM80 jtag samsung FD6S samsung 649

    lcd power board schematic

    Abstract: ICH4-M schematic lcd samsung schematic diagram samsung ddr schematic diagram sensor of ac samsung hdd schematic schematic diagram of a charger samsung dmb ddr schematic
    Text: www.kythuatvitinh.com 3 System Schematic Diagram 3-1 System Main Board Schematic Diagram Q30 This Document can not be used without Samsung’s authorization. 3-1 3 System Schematic Diagram www.kythuatvitinh.com 3-1-1 a Main Board Schematic Sheet 2 of 47(Block Diagram)


    Original     		PDF

    lcd power board schematic

    Abstract: samsung hdd schematic ICH4-M MAIN BOARD DIAGRAM hdd schematic schematic diagram power sequence schematic diagram samsung schematic diagram of a charger ddr schematic
    Text: 3 System Schematic Diagram 3-1 System Main Board Schematic Diagram Q30 This Document can not be used without Samsung’s authorization. 3-1 3 System Schematic Diagram 3-1-1 a Main Board Schematic Sheet 2 of 47(Block Diagram) 3-2 This Document can not be used without Samsung’s authorization.


    Original     		PDF 47ent lcd power board schematic samsung hdd schematic ICH4-M MAIN BOARD DIAGRAM hdd schematic schematic diagram power sequence schematic diagram samsung schematic diagram of a charger ddr schematic

    SMDK2410

    Abstract: LTD79W298L30GK LTV350QV S3C2413 lcd 240x320 OPENice-A1000 SMDK2413 LTV350 S3C2413X ltd79w298
    Text: S3C2413X 32-BIT RISC MICROPROCESSOR APPLICATION NOTE Revision 1.01 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or


    Original     		PDF S3C2413X 32-BIT S3C2413X, S3C2413X SMDK2410 LTD79W298L30GK LTV350QV S3C2413 lcd 240x320 OPENice-A1000 SMDK2413 LTV350 ltd79w298

    S3C2412X

    Abstract: S3C2412 Samsung s3c2412 LTV350QV SMDK2410 SMDK2412 usb2412 LTD79W298L30GK 240x320 U241MON
    Text: S3C2412X 32-BIT RISC MICROPROCESSOR APPLICATION NOTE Revision 1.01 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or


    Original     		PDF S3C2412X 32-BIT S3C2412X, S3C2412X S3C2412 Samsung s3c2412 LTV350QV SMDK2410 SMDK2412 usb2412 LTD79W298L30GK 240x320 U241MON

    samsung kmm5322204aw

    Abstract: km416c1204aj kmm5322204aw MFJ 224 km416c1204a 2MX32 EDO SIMM Samsung
    Text: DRAM MODULE KMM5322204AW/AWG KMM5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM G E N E R A L D E S C R IP T IO N FEATURES The Samsung KMM5322204AW is a 2M bit x 32 • Part Identification Dynamic RAM high density m em ory m odule. The


    OCR Scan     		PDF KMM5322204AW/AWG KMM5322204AW/AWG 2Mx32 1Mx16 KMM5322204AW 1Mx16bit 42-pin 72-pin samsung kmm5322204aw km416c1204aj MFJ 224 km416c1204a 2MX32 EDO SIMM Samsung

    km416c1200aj

    Abstract: KM416C1200A
    Text: DRAM MODULE KM M5322200A W/AW G KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 D ynamic RAM high density m em ory module. The Samsung KM M 5322200AW consists of four CMOS


    OCR Scan     		PDF KMM5322200AW/AWG KMM5322200AW/AWG 2Mx32 1Mx16 KMM5322200AW 42-pin 72-pin KMM5322200AW km416c1200aj KM416C1200A

    KMM5322204AW

    Abstract: No abstract text available
    Text: KMM5322204AW DR A M Modul e ELECTRONICS KM M5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322204AW is a 2M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM5322204AW M5322204AW/AWG 2Mx32 1Mx16 KMM5322204AW 42-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5322200AW/AWG KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200AW consists of four CMOS


    OCR Scan     		PDF KMM5322200AW/AWG KMM5322200AW/AWG 2Mx32 1Mx16 KMM5322200AW 42-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: KMM5322200AW DRAM Module ELECTRONICS KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200AW consists of four CMOS


    OCR Scan     		PDF KMM5322200AW KMM5322200AW/AWG 2Mx32 1Mx16 KMM5322200AW cycles/16 KMM5322200AWG

    KM416C1200AJ

    Abstract: No abstract text available
    Text: DRAM MODULE 8 Mega Byte KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM , 1K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200AW consists of four CMOS


    OCR Scan     		PDF KMM5322200AW/AWG 2Mx32 1Mx16 KMM5322200AW 42-pin 72-pin KM416C1200AJ

    power supply samsung tv

    Abstract: ka2105 samsung tv
    Text: SAMSUNG SEM ICOND UC TO R INC Tfl ^ KA2105 7Tb4142 D0041D b 3 ' - T ~ n ~ tn -< n LINEAR INTEGRATED CIRCUIT LIMITER AMPLIFIER AND DETECTOR FOR A TV SIF The KA2105 contains a limitingamplifler and an FM detector in a singlein-line plastic package. This device Is especially recommended as a


    OCR Scan     		PDF 7Tb4142 D0041D KA2105 KA2105 PH100mV 400Hz 25KHz 100mV 25KHZ, power supply samsung tv samsung tv

    power supply 120v- 12v circuit diagram

    Abstract: MC1488 SAMSUNG
    Text: SAMSUNG ELE CTRONICS INC 42E D KS5788 • 7 ^ 4 1 4 2 00QT322 1 « S M G K CMOS INTEGRATED CIRCUIT QUAD CMOS LINE DRIVER The KS5788 is designed to interface data terminal equip­ ment DTE with data communications equipment (DCE) in conformance with the specifications of EIA RS-232-Cr


    OCR Scan     		PDF KS5788 00QT322 KS5788 RS-232-Cr MC1488) MC1488 KS5788N KS5788D power supply 120v- 12v circuit diagram MC1488 SAMSUNG

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 'PTbmMS □G170t.G ÔT7 KM23C81 OOB G CMOS MASK ROM 8M-Bit (1M X 8 /5 1 2K X 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576x8 (byte mode) 524,288x16 (word mode) • Fast access time: 100ns (max.)


    OCR Scan     		PDF G170t KM23C81 576x8 288x16 100ns 42-pin, 44-pln, KM23C8100B 0G170b3

    samsung kmm5322204aw

    Abstract: Samsung 2MX32 EDO simm module KMM5322204a
    Text: DRAM MODULE KMM5322204AW/AWG KMM5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Sam sung KM M 5322204AW is a 2M bit * 32 • Part Identification D ynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM5322204AW/AWG KMM5322204AW/AWG 2Mx32 1Mx16 5322204AW 1Mx16bit 42-pin 72-pin M5322204AW samsung kmm5322204aw Samsung 2MX32 EDO simm module KMM5322204a

    KMM5322000BV-6

    Abstract: KMM5322000BV6 kmm5322000b KMM5322000BV KMM532200 DU26
    Text: KMM53: ’SÀVJlt BV/BVG DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5322000BV is a 2M bits x 32 Dynam­ ic RAM high density memory module. The Samsung KMM5322000BV consist of sixteen CMOS 1M x 4 bit


    OCR Scan     		PDF KMM53: KMM5322000BV 20-pin 72-pin M5322000BV-6 M5322000BV KMM5322000BV-8 KMM5322000BV-6 KMM5322000BV6 kmm5322000b KMM532200 DU26

    KMM581000A

    Abstract: KM41C1000AJ KMM481000A-8
    Text: KMM481000A/KMM581000A MEMORY MODULES 1 M x 8 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 1,048,576 x 8-bit Organization • Performance range: The Samsung KMM481000A and KMM581000A are 1 M x 8 dynamic RAM high density memory modules.


    OCR Scan     		PDF KMM481000A/KMM581000A KMM481000A-8 KMM581000A-8 KMM481000A-10 KMM581000A-10 150ns 180ns 180ns KMM481000A KMM581000A KM41C1000AJ

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC h?E D • 7 ^ 4 1 4 2 D 0 1 5 2 7 M 37=5 ■ SI'IGK KMM5364100H/HG DRAM MODULES 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KMM5364100H-6 tR A C tc A c Irc 60ns 15ns 110ns KMM5364100H-7 70ns 20ns


    OCR Scan     		PDF KMM5364100H/HG KMM5364100H-6 KMM5364100H 24-pin 72-pin 22/xF 110ns KMM5364100H-7 130ns

    KMM5324

    Abstract: No abstract text available
    Text: Preliminary DRAM MODULE KMM5324004ASW/ASWG KMM5324004ASW/ASWG EDO Mode 4M X 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 5324004A is a 4Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KM M 5324004A


    OCR Scan     		PDF KMM5324004ASW/ASWG 4Mx16, 324004A 4Mx32bits 4Mx16bits 72-pin KMM5324004ASW/ASWG 5324004ASW KMM5324

    KS555

    Abstract: KS555 327
    Text: KS555 CMOS INTEGRATED CIRCUIT 8 DIP CMOS SINGLE TIMER The KS555 is a CMOS timer with improved performance over a standard bipolar one. Due to its high-impedance inputs, it is capable of producing accurate time delays and oscillations with less expensive smaller timing


    OCR Scan     		PDF KS555 KS555 500KHz) KS555 327

    1Mx4

    Abstract: No abstract text available
    Text: DRAM MODULE 4 Mega Byte KMM5361203W/WG Fast Page Mode 1Mx36 DRAM SIMM , 1K Refresh, 5V Using 1Mx16 B/W DRAM and 1Mx4 Quad CAS DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5361203W is a 1M bit x 32 Dynamic RAM high density memory module The


    OCR Scan     		PDF KMM5361203W/WG 1Mx36 1Mx16 KMM5361203W 42-pin 24-pin 72-pin 1Mx4

    KA22471

    Abstract: No abstract text available
    Text: LINEAR INTEGRATED CIRCUIT KA22471 FM IF/AM TUNER SYSTEM T h e KA22471 is a m o n o lith ic integrated c irc u it deve lo pe d fo r th e radio ca ssette ta p e recorder. FUNCTIONS • AM S EC TIO N : C onverter, IF am plifier, Detector, Tuning indicator. • FM S E C TIO N : IF am plifier, Q u a d ra tu re detector, Tuning indicator.


    OCR Scan     		PDF KA22471 KA22471 400Hz

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. Northwest North Central 3655 North First Street San Jose, CA 95134 TEL: 408 954-7000 FAX: (408) 954-7883 Northeast 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: (708) 775-1050 FAX: (708) 775-1058 Southwest


    OCR Scan     		PDF 124th 105th

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS MASK ROM KM23C16100FP 16M-Bit 2M X 8/1 M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time Random access: 150ns (max.) Page access: 70ns (max.)


    OCR Scan     		PDF KM23C16100FP 16M-Bit 150ns 100mA 64-pin KM23C16100FP KM23C16100FP)