U 343M Search Results

tic 2260

Abstract: F63TNR FDS6575 L86Z
Contextual Info: FAIRCHILD S E M I C O N D U C T O R November 1998 tm FDS65 75 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features T h is P -C h a n n e l Logic Level M O S F E T is pro d u ce d u s in g F a irchild S e m ic o n d u c to r's a d v a n c e d P o w e rT re n ch

tic 2260

Abstract: MARKING W1 AD CBVK741B019 F63TNR FDS6375 FDS9953A L86Z MARKING code F050
Contextual Info: =M l C O N D U C T O R tm FDS6375 Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features T h is P -C h a n n e l 2 .5 V s p e c ifie d M O S F E T is p ro d u ce d u s in g F a ir c h ild S e m ic o n d u c t o r 's advanced P o w e rT re n c h pro c e s s th a t has been e s p e c ia lly ta ilo re d

tic 2260

Abstract: F63TNR FDS6675 L86Z
Contextual Info: FAIRCHILD October 1998 SEMICONDUCTOR t m FDS6675 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features T h is P -C h a n n e l Lo gic Level M O S F E T is p ro d u ce d u s in g F a irch ild S e m ic o n d u c to r's a d v a n c e d P o w e rT re n ch

Contextual Info: ,V U .g July 1999 U M fc P A I R C H I L_D FDS6890A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified M OSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored

Contextual Info: EMl C O N D U C TO R ! FDS6982 Dual N-Channel, Notebook Power Supply MOSFET General Description Features This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the va rio u s peripheral vo lta ge rails required in notebook

Supersot6

Abstract: ld18a d872 SSOT-6 MARKING W1 AD CBVK741B019 F63TNR FDC6506P
Contextual Info: =M l C O N D U C T O R tm FDC6506P Dual P-Channel Logic Level PowerTrench MOSFET General Description Features These P-Channel logic level MOSFETs are produced using F airch ild S e m ico n d u cto r's ad va nce d Pow erTrench process that has been especially tailored to m inimize

Contextual Info: SLI-343M8G Data Sheet SLI-343 8 Series EXCELED Features ・Viewing angle 2θ 1/2 : 40° ・High brightness ・Low current consumption Color Type ・Competent to direct mount V U D Y M P Specifications Viewing angle 2θ 1/2 / 40 : EXCELED™ Chip Structure

Contextual Info: SLI-343M8C Data Sheet SLI-343 8 Series EXCELED Features ・Viewing angle 2θ 1/2 : 40° ・High brightness ・Low current consumption Color Type ・Competent to direct mount V U D Y M P Specifications Viewing angle 2θ 1/2 / 40 : EXCELED™ Chip Structure

Contextual Info: S E M IC O N D U C TO R tm FDR836P P-Channel 2.5V Specified MOSFET General Description Features S u p e rS O T -8 P -C hannel en han cem en t m ode power • -6.1 A, -2 0 V. R ds on = 0 .0 3 0 W @ V QS = -4 .5 V field effect transistors are produced using Fairchild’s

sli-343

Contextual Info: SLI-343MC Data Sheet SLI-343 Series Features ・Viewing angle 2θ 1/2 : 40° ・High brightness Color Type ・Competent to direct mount U D Y M Specifications Viewing angle 2θ 1/2 / 40 : High luminous intensity Chip Structure Part No. • SLI-343URC Absolute Maximum Ratings Ta＝25℃

Contextual Info: SLI-343MG Data Sheet SLI-343 Series Features ・Viewing angle 2θ 1/2 : 40° ・High brightness Color Type ・Competent to direct mount U D Y M Specifications Viewing angle 2θ 1/2 / 40 : High luminous intensity Chip Structure Part No. • SLI-343URC Absolute Maximum Ratings Ta＝25℃

supersot-3

Abstract: Single P-Channel, Logic Level, PowerTrench MOSFET MARKING W1 AD 100MS FDN360P SSOT-23
Contextual Info: EM I C O N D U C T O R tm FDN360P Single P-Channel PowerTrench MOSFET General Description Features T h is P -C h a n n e l Lo gic Level M O S F E T is p ro d u c e d using Fairchild S em iconductor's advanced Pow erTrench process th a t ha s been e s p e c ia lly ta ilo re d to m in im iz e o n -s ta te

Contextual Info: S E M IC O N D U C TO R PRELIMINARY tm FDS5680 Single N-Channel PowerTrench MOSFET G eneral D escription Features T h is N -C h a n n e l Lo g ic Level M O S F E T is p ro d u ce d using Fairchild S em iconductor's ad vanced P ow erTrench process th a t h a s be en e s p e c ia lly ta ilo re d to m in im iz e o n -s ta te

5l 0380

Abstract: sl 0380 r fs3t MARKING W1 AD CBVK741B019 F63TNR FDR835N FDR838P
Contextual Info: 1999 =M l C O N D U C T O R tm FDR838P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features T h e se P -G hannel 2.5V s pe cified M O S FETs are produced using Fairchild S e m ic o n d u c to r's a d v a n c e d P ow erT ren ch p rocess th a t ha s been e s p e c ia lly ta ilo re d to m in im ize th e

Contextual Info: S E M IC O N D U C TO R tm FDC642P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state

Contextual Info: =M l C O N D U C T O R tm FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize

tic 2260

Abstract: tnr 221 CBVK741B019 F63TNR FDS6961 FDS6961A FDS9953A L86Z
Contextual Info: FAIRCHILD M IC D N D U C T D H April 1999 tm FDS6961 A Dual N-Channel Logic Level PowerTrench General Description MOSFET Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been

d872

Abstract: Supersot6 MARKING code GM SOT 323 CF 331 SSOT-6 Supersot 6 MARKING W1 AD CBVK741B019 F63TNR FDC6306P
Contextual Info: =M l C O N D U C T O R tm FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET Features General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize

F63TNR

Abstract: L86Z NDS9435A
Contextual Info: FAIRCHILD S E M IC O N D U C T O R May 1996 tm NDS9435A Single P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancem ent mode power field effect transistors are produced using Fairchild's proprietary, high

VEB Keramische Werke

Abstract: Keramische Werke Hermsdorf Manifer 183 VEB Kombinat zf filter Ringkerne DDR DDR-102 keramische werke hermsdorf spulen Schalenkerne HERMSDORF EE-55 FERRITE
Contextual Info: FERRITE-HANDBUCH K WH KOM BINAT VEB KERAM ISCHE W ERK E HERM SDORF/THÜR. DEUTSCHE DEMOKRATISCHE REPU BLIK A U S G A B E 1970 Abbildungen und Werte gelten nur bedingt als Unterlagen für Bestellungen. Rechtsverbindlich ist jeweils die Auftragsbestätigung.

R8V mark sot 23

Abstract: FZ 300 R 06 KL optron CBVK741B019 F63TNR NDH8321C
Contextual Info: January 1999 FAIRCHILD :M l C O N D U C T O R NDH8321 C Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description T h ese dual N- and P -Channel enhancem ent mode power field effect transistors are produced using Fairchild's

Contextual Info: S E M IC O N D U C TO R tm FDN342P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized

Contextual Info: S E M IC O N D U C TO R tm FDS5670 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

PVP134

Contextual Info: U N I V ERSAL BACKPLAN ES Alzanti have designed and are now manufacturing a range of Universal Backplanes for use in the high speed assembly and prototyping of 3U ‘Eurorack’ systems. The Eurocard compatible DIN41612 series connector is converted to a convenient screw terminal interface