U MARKING AMPLIFIER Search Results

Contextual Info: JIANGS U CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications Marking :1C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB typ. (@f=1GHz) • High Gain: |S21e| =11dB (typ.) (@f=1GHz) 2 Marking M U

Contextual Info: C21 POWER dielectric laboratories Ultra High Q, Porcelain, High Power High performance, compact high voltage capacitors for use in Power Amplifiers, Matching Networks and Filters. Part Number C 21 AH 202 J 1 U X L Product Code Size Code Laser Marking Optional

MT3S20P

Contextual Info: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB Typ. (@f=1GHz) • High Gain: |S21e|2=11dB(Typ.) (@f=1GHz) Marking M U PW-Mini

HN3C14F

Contextual Info: HN3C14F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 14 F VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO v EBO ic Ib MARKING

HN3C15F

Contextual Info: HN3C15F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 15F VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) MARKING 6 5 4 Fl F» FI- Type Name

HN2C10FU

Contextual Info: TO SH IBA HN2C10FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N2C1OFU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) MARKING

HN3C09FU

Contextual Info: TO SH IBA HN3C09FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C09FU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) MARKING

HN2C12FU

Abstract: H123
Contextual Info: TO SH IBA HN2C12FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN2C12FU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) MARKING

Contextual Info: CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PACKAGE O U TLIN E DETAILS ALL DIM EN SION S IN nun Marking CSA1162Y-3E CSA1162GR G -3F _3.0 2.8 0.14 Û.09 0.48 o 3b Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02

BFW92

Contextual Info: Tem ic BFW92 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92 Marking: BFW92

Contextual Info: 2SC4061K Transistor, NPN Features Dimensions U n its : mm • • • • available in SMT3 (SMT, SC-59) package package marking: 2SC4061K; AN^, where ★ is hEE code high breakdown voltage, BVCEo = 300 V small collector output capacitance 2SC4061K (SMT3)

TRANSISTOR 2SC

Abstract: ic MARKING FZ 2SC4061K T146 398-2 Transistor Marking C3
Contextual Info: 2SC4061K Transistor, NPN Features Dimensions U nits: mm • available in SMT3 (SMT, SC-59) package • package marking: 2SC4061K; AN-*, where ★ is hFE code • • 2SC4061K (SMT3) high breakdown voltage, BVCeo = 300 V small collector output capacitance

Contextual Info: f Z T S G S - T H O Ä T# is M S O N S03904 U i C T lt g « ! SMALL SIGNAL NPN TRANSISTOR Type Marking S03904 071 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPO SE AMPLIFIER AND

MAR 641 TRANSISTOR

Abstract: transistor MAR 543 MAR 737 ic BFR92AR BFR92A mar 727 1646 IC 28B SOT-23 of ha 741 ic MAR 737
Contextual Info: Tem ic BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency BFR92A Marking: + P2 Plastic case SOT 23

TELEFUNKEN* U 413 B

Abstract: MAR 641 TRANSISTOR transistor MAR 439
Contextual Info: T emic BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-araplifier up to GHz range specially for wide band an­ tenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR96T Marking: BFR96T

BFR92a MARKING P2

Abstract: MAR 641 TRANSISTOR sot-23 marking RIP ha 1452 BFR92A
Contextual Info: T em ic BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency BFR92A Marking: + P2 Plastic case SOT 23

Contextual Info: SIEMENS BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 £2-gain block • 9 dB typical gain at 1.0 GHz • 9 dBm typical P.-idB at 1-0 ^ z • 3 dB-bandwidth: DC to 2.4 G Iz I" RF IN o- Circuit Diagram Type u Marking Ordering Code

Contextual Info: 32E D • Ö23b320 O G l b U l S « S I P NPN Silicon RF Transistor -p_ ^ | « ^ 3 .S IE M E N S / SPCLi SEMICONDS _ 64 • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 70 to 150 mA. TVpe Marking

2SA1036K

Abstract: transistor surface mount to 2SA1577 2SC2411K 2SC4097 T106 T146 transistor PNP
Contextual Info: 2SA1036K 2SA1577 Transistor, PNP Features Dimensions U n its: mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1036K and 2SA1577; H-*, where ★ is hFE code • • • large collector current: ^C(max) = —500 mA

marking AGs sot-23

Abstract: marking AGs sot23 ags marking n1a marking n1a sot23 marking code VN2106
Contextual Info: VN2106 VN2110 S u p ertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S ON Product marking for SOT-23: (max) TO-92 TO-236AB* 60V 4.0Q VN2106N3 - VN2106ND 100V 4.0C1 — VN2110K1 VN2110ND BV dqs

Contextual Info: 2SA1036K 2SA1577 Transistor, PNP Features Dimensions Units : mm • available in SM T3 (SMT, SC -59) and U M T3 (UNIT, SC -70) packages • package marking: 2SA 1036K and 2SA1577; (-!★, where ★ is hFE code • large collector current: ^C(max) = - 500 mA

CSA1362GR

Abstract: transistor K 1413 CSA1362
Contextual Info: CSA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P-N -P transistor PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m Marking CSA1362GR : AE _3 .0_ 2.8 0.14 0.48 0.38 Pin configuration 1 = BASE 2 = EMITTER • 3 = COLLECTOR 2.6 2.4 _K°2_ 0.89 0.60

Contextual Info: 23033*34 Ü DO Ga b? 234 • CSA1162 CDÎL LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PA CKA G E O U TLIN E D ETA ILS ALL D IM EN SIO N S IN m m Marking CSA1162Y-3E CSA1162GR G -3F _3.0 2 . 8~ 0.48 0.38 3 Pin configuration 1 = BASE