U-344 EPROM Search Results

89C54

Abstract: SST89C58 89c* with 2kb ram SST89C58-33-C-TQJ PLCC-44 SST89C54 89c58 sst interfacing of 4KB RAM and 4KB EEPROM with 8051
Contextual Info: FlashFlex51 MCU SST89C54 / SST89C58 Data Sheet SST89C5xFlashFlex51 MCU FEATURES: • 8-bit 8051-Compatible Microcontroller MCU with Embedded SuperFlash Memory – Fully Software Compatible – Development Toolset Compatible – Pin-For-Pin Package Compatible

Contextual Info: FlashFlex51 MCU SST89C54 / SST89C58 Preliminary Specifications FEATURES: • • Multi-Purpose 8-bit 8051 Family Compatible Microcontroller Unit MCU with Embedded SuperFlash Memory Fully Software and Development Toolset Compatible as well as Pin-For-Pin Package

SST89C58

Abstract: SST89C58-33-C-TQJ interfacing 4k*8 external RAM with 8051 Philips F423 5f405 89c58 sst flash programmer circuit for AT89c55 i87C51 p87c528 replacement C501-1E
Contextual Info: FlashFlex51 MCU SST89C54 / SST89C58 Preliminary Specifications FEATURES: • • Multi-Purpose 8-bit 8051 Family Compatible Microcontroller Unit MCU with Embedded SuperFlash Memory Fully Software and Development Toolset Compatible as well as Pin-For-Pin Package

Contextual Info: CY7C344 CY7C344B m w CYPRESS 32-Macrocell MAX EPLD F eatures F unctional D escription • High-performance, high-denslty re­ placement for TTL, 74HC. and cus­ tom logic • 32 macrocells, 64 expander product terms in one LAB • 8 dedicated inputs, 16 I/O pins

Contextual Info: WAFER SCALE IN TEGRATION 3TE D EB ^ 5 3 ^ 0 ODOQS'IS 4 E l tilAF _ WS57C128F ""p - W AFERSCALE IN TE G R A T IO N , IN C. ~2_°l L\ HIGH SPEED 16K x 8 CM OS EPROM KEY FEATURES • Fast A c c e ss Time — • EPI P ro cessin g

32-Pad

Abstract: 20 tlw
Contextual Info: DPV27C101 128K X 8 UVPROM MONOLITHIC D ESC R IP T IO N : The D P V 27 C 101 is a high-speed 128K X 8 U V erasable, electrically programmable read only memory EPROM . It is especially well suited for applications where low-power consumption is important 32-pin dilal in-line packages (D IPs) and standard

27C101

Contextual Info: Dense-Pac Microsystems. Inc. ^ 128K X 8 UVPROM MONOLITHIC D ESC R IP TIO N : The D P V 27 C 101 is a high-speed 128K X 8 U V erasable, electrically programmable read only memory EPROM . It is especially well suited for applications where low-power consumption is important

Contextual Info: WS27C256F MILITARY 32K x 8 CMOS EPROM KEY FEATURES • Fast A ccess Tim e • EPI P rocessing — 90 ns O ver Full Mil Te m p R ange — Latch-up Im m unity Up to 200 mA • Low Pow er C onsum ption — ESD P rote ction E xceed s 2000V • DESC SMD No. 5962-86063

780cb

Abstract: A138-00 1351F
Contextual Info: PDA REFERENCE DESIGN Evaluation Kit Hardware Manual Contents Introduction. 334 Specification.

epf8282 hardware

Contextual Info: Configuration EPROMs ÆQn=^ for FLEX 8000 Devices - 1 Data Sheet August 1993, ver. 2 Features □ □ □ □ □ □ Functional Description Fam ily of serial EPROM s designed to configure FLEX 8000 devices

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

Contextual Info: H ig h p e r f o r m a n c e 256K X8/128K X16 5 V C M O S F la s h E E P R O M « II A S29F200 A 2 5 6 K X 8 / 1 2 8 K X 1 6 C M O S Flash EEPROM Preliminary information Features • S ector a rc h ite c tu re - One 16K; tw o 8K; one 32K; and three 64K byte sectors

Contextual Info: CY7C344 CY7C344B W w CYPRESS 32-Macrocell MAX EPLD Features Functional Description • High-performance, high-density re­ placement for TTL, 74HC, and cus­ tom logic • 32 macrocells, 64 expander product terms in one LAB • 8 dedicated inputs, 16 I/O pins

Contextual Info: CY7C340 EPLD Family 0 CYPRESS Multiple Array Matrix High-Density EPLDs — VHDL simulation ViewSim Features • Erasable, user-configurable CMOS EPLDs capable o f implementing highdensity custom logic functions • 0.8-micron double-metal CMOS EPROM technology (CY7C34X)

Contextual Info: & 27HC256 Microchip 256K 32K x 8 High Speed CMOS EPROM FEATURES DESCRIPTION • The Microchip Technology Inc 27HC256 is a CMOS 256K bit (electrically) Programmable Read Only Memory. The device is organized into 32K words of 8 bit each. Advanced CMOS technology allows bipolar speed with

Contextual Info: H igh p erfo rm an ce 1M X 8/512K X 16 3V CMOS Flash EEPROM AS29LV800 h il. II 1 M X 8 / 5 1 2 K x 1 6 C M O S F lash EPROM Advance information Features •O rg a n iza tio n : 1M x 8 / 5 1 2 K x 16 • L o w p o w e r c o n s u m p t io n • Sector architecture

MEXICO LF 2A 250V 313 FUSE

Abstract: MEXICO LF 1A 250V 313 FUSE MEXICO LF 15A 250V 326 FUSE MEXICO LF 20A 250V 326 FUSE MEXICO LF 5A 250V 314 FUSE mosfet 5kw high power rf MEXICO LF 20A 250V 314 FUSE MEXICO LF 5A 250V 314 FUSE slo blo MEXICO LF 2A 250V 312 FUSE equivalent circuit of power transformer 11kv
Contextual Info: Circuit Protection Specialists World Headquarters Littelfuse, Inc. 800 E. Northwest Highway Des Plaines, IL 60016, USA www.littelfuse.com International Sales, Distribution and Engineering Facilities: North America • Des Plaines, Illinois USA Technical Assistance and

Contextual Info: bSMTflSñ □ □ l b 7 3 1 TäT • m m M IT S U B IS H I M ICRO CO MPUTERS MITSUBISHK m C M P T R / N I P R O M37415PFS blE ] PIGGYBACK fo r M 3 7 4 1 S M 4 -X X X F P DESCRIPTION FEATURES The M37415PFS is an EPROM mounted-type microcompu­ • D ifference with the M 37415M 4-XXXFP are:

Contextual Info: M IT S U B IS H I M IC RO CO M PUTERS M37415PFS PIGGYBACK for M 3 7 4 1 5 M 4 -X X X F P DESCRIPTION FEATURES The M37415PFS is an EPROM mounted-type microcompu­ • ter which utilizes C M O S technology, and is designed for D ifference with the M 37415M 4-XXXFP are:

Contextual Info: ADV MICRO M E M O R Y 4ÔE D 025752Ö GüBDS^e 1 • a T—46—13-25 Am 27X010 1 Megabit (131,072 x 8-Bit) CMOS ExpressROM Device AMD4 Advanced Micro Devices DISTINCTIVE CHARACTERISTICS ■ ■ ■ As an OTP EPROM alternative: - Factory optimized programming

Contextual Info: H i j j h P i - r f o r m a i K <.• L BB SV C M O S I la s h 1 I P R O M 2 A S 2 l> I ' 2 0 0 A S6K X 8/IZ8K x I6 6 K x 8 / I 2 8 K x 1 6 C M O S Jf /.isii I'I P K O M Preliminary information Features • Organization: 256KX8 or 128KX16 • Sector architecture

27C010

Abstract: 27C020 NM27C040 512K x 8 High Performance CMOS EPROM 0300-040
Contextual Info: December 1995 NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibllity

AM27C256-205

Abstract: Am27C258 27C256-250 Am27c256-155 AM27C256DC AM27C256 AMD 27C256 255
Contextual Info: Am27C256 32,768 X Advanced Micro Devices 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS Fast access time — 55 ns Low power consumption: - 100 maximum standby current Programming voltage: 12.5 V Single +5-V power supply • • • • JEDEC-approved pinout

Contextual Info: WS57C51C HIGH SPEED 16K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Low Power Consumption • Pin Com patible with Am27S51 and N82HS1281 Imm une to Latch-UP • Fast Programming • ESD Protection Exceeds 2000V • — 35 ns — Up to 200 mA