UA 554 BR Search Results

Contextual Info: D4KB05 thru D4KB10 GLASS PASSIVATED REVERSE VOLTAGE FORWARD CURRENT BRIDGE RECTIFIERS - 50 to 1000Volts - 4.0 Amperes D3K FEATURES ● Glass passivated chip junction .057 1.45 R2 ● High case dielectric strength .130(3.3) .114(2.9) .110(2.8) .094(2.4) .555(14.1)

Contextual Info: D4KB05 thru D4KB10 GLASS PASSIVATED REVERSE VOLTAGE FORWARD CURRENT BRIDGE RECTIFIERS - 50 to 1000Volts - 4.0 Amperes D3K FEATURES ● Glass passivated chip junction .057 1.45 R2 ● High case dielectric strength .130(3.3) .114(2.9) .110(2.8) .094(2.4) .555(14.1)

Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BSR30 ISSUE* -JUNE 1996_ O_ C O M PLEM EN TA R Y T Y P E - BSR40 PARTM ARKIN G D E T A IL - BR1 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -70 V Collector-Emitter Voltage

KBU401

Abstract: KBU402 KBU403 KBU404 KBU405 KBU406 KBU407
Contextual Info: FCI Semiconductor Preliminary Data Sheet KBU401.407 series 4.0 AMP Single Phase Silicon Bridge Mechanical Dimensions Description KBU401.407 series KBU401.407 series .280 •260 .205 .106 —II-.0S2 Features O O O O O Compact Size Low Leakage Low Cost Construction

Contextual Info: B 41 554 Capacitors with Screw Terminals SIKOREL 125, LL Grade Maximum reliability For highly professional switch-mode power supplies and capacitor banks Operating temperatures up to 125 °C Construction • Charge-discharge proof, polar • Aluminum case with insulating sleeve

2SB554

Abstract: toshiba 2sb554 2SD424 TOSHIBA 2SD424 SB554 S8B554-R
Contextual Info: 2 / U D > P N P = « f f i i b « . W h 5 ^ y 7 >‘9 SILICON PNP TR IP LE DIFFUSED MESA TRANSISTOR 2SB o 554 U n i t i n mm o 0 2 5 .0 MAX . P ow er A m p l i f i e r A p p l i c a t i o n s 3 • u ? milite a : * è i S iB - E - t - t o 0 2 1 .0 MAX Hr : P c = 150W

BS208

Abstract: MB8075
Contextual Info: Philips Components Data sheet status Product specification date of issue February 1991 BS208 P-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION FEATURES • Direct interface to C-MOS • High-speed switching • No secondary breakdown.

55461HM

Abstract: 55461RM 75461RC 75461TC 55461 75461 fairchild 55461 c
Contextual Info: 55/75460 • 55/75461 • 55/75462 55/75463 • 55/75464 DUAL HIGH VOLTAGE HIGH CURRENT'PERIPHERAL DRIVERS FAIRCHILD LINEAR I N T E G R A T E D CI RC UIT S G E N E R A L D E S C R IP T IO N — The 5 5 /7 5 4 6 0 Peripheral Driver Series converts T T L and D T L logic levels to H IG H voltage, H IG H current levels. The

Contextual Info: • International Rectifier Data Sheet No. PD-6.078 IR 04 H420 HIGH VOLTAGE HALF-BRIDGE Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation

75462TC

Abstract: 75462 55462HM 75462HC 75462RC 55462
Contextual Info: 55/75460 • 55/75461 • 55/75462 55/75463 • 55/75464 DUAL HIGH VOLTAGE HIGH CURRENT'PERIPHERAL DRIVERS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E S C R IP T IO N — The 5 5 /7 5 4 6 0 Peripheral Driver Series converts T T L and D T L logic levels to H IG H voltage, H IG H current levels. The

TLMG1100-GS08

Abstract: TLMP1100-GS08 TLMO1100-GS08 TLMG1100GS08
Contextual Info: TLMS1100, TLMO1100, TLMY1100, TLMG1100, TLMP1100, TLMB1100 www.vishay.com Vishay Semiconductors Standard 0603 SMD LED FEATURES • Smallest SMD package 0603 with exceptional brightness 1.6 mm x 0.8 mm x 0.6 mm L x W x H • High reliability lead frame based

Contextual Info: TLMS1100, TLMO1100, TLMY1100, TLMG1100, www.vishay.com Vishay Semiconductors Standard 0603 SMD LED FEATURES • Smallest SMD package 0603 with exceptional brightness 1.6 mm x 0.8 mm x 0.6 mm L x W x H • High reliability lead frame based • Temperature range -40 °C to +100 °C

Lpp 97

Abstract: transil 428 54-135
Contextual Info: transient voltage suppressors «TRANSIL» íí diodes de protection «TRANSIL» THOMSON-CSF 'R M @ V r m t»A 2,5 KW G LT G LT G LT G LT / 12 24 47 120 V) m in 12 24 47 120 m ax nom 350 W 1 ms expo. 5 5 5 5 @ V(BR>* (V) U nidirectional typ es / 15 30 60

Contextual Info: TLMS1100, TLMO1100, TLMY1100, TLMG1100, TLMP1100, TLMB1100 www.vishay.com Vishay Semiconductors Standard 0603 SMD LED FEATURES • Smallest SMD package 0603 with exceptional brightness 1.6 mm x 0.8 mm x 0.6 mm L x W x H • High reliability lead frame based

Contextual Info: Z-Power LED X10490 Technical Data Sheet Specification UPGT801-S SSC Drawn Approval CUSTOMER Approval Rev. 00 September 2010 www.seoulsemicon.com Document No. : SSC-QP-7-07-24 Rev.00 Z-Power LED X10490 Technical Data Sheet UPGT801-S 1. Features 2. Absolute Maximum Ratings

s51 Optocoupler

Abstract: LA12 NSL-32 500AH NSL32
Contextual Info: NSL-32 i|LON€X Optocoupler Features * * * 5.7 nin. Compact, moisture resistant package Low LED current Passive resistance output 25A min. Anode lead 0.25x0.51 Photocell 2.54 Description This optocoupler consists o f a r LED input optically coupled to a photocell. The photocell resistance is

Transient voltage suppressors

Abstract: DIODE 1n6294a diode 1n6285A 1N6275 1,5ke15 diode 1n6278A
Contextual Info: 1.5KE6.8 thru 1.5KE440CA and 1N6267 thru 1N6303A Transient Voltage Suppressors Peak Pulse Power 1500W Breakdown Voltage 6.8 to 440V Features ‹ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ‹ Glass passivated junction ‹ 1500W peak pulse power capabililty on 10/1000us waveform,

N5L-32B-100

Abstract: Photocell LA12 NSL-32B-102 NSL-32B-103 NSL-32B-104
Contextual Info: N5L-32B-100 Series SÏLONEX Opto couplers Features * * * Compact, moisture resistant package Low LED current Passive resistance output Description This optoccupler consists o f a r LED input optically coupled to a photocell. The photocell resistance is high when the LED current is "off: and low 'Mien the

Contextual Info: Z-Power LE DX10490 Technical Data Sheet Spe cifica t ion UPGT8 0 1 - S SSC Drawn Approval CUSTOMER Approval Re v. 0 0 Se pt e m be r 2 0 1 0 w w w .se oulse m icon .com Document No. : SSC-QP-7-07-24 Rev.00 Z-Power LE DX10490 Technical Data Sheet UPGT8 0 1 - S

SC08-11HWA

Abstract: SA08-11 SC08-13 "pin compatible" FX08-11EWA 12EWA SA08-11HWA LT/SG3527A SA08-12 SA08-13 SC08-11
Contextual Info: 20mm 0.8INCH SINGLE DIGIT NUMERIC DISPLAYS SA08-11 SC08-11 SA08-12 SC08-12 SA08-13 . SC08-13 SA08-21 SC08-21 FX08-11 Features Description •0.8 INCH DIGIT HEIGHT. The Bright Red source color devices are made with Gallium •LOW CURRENT OPERATION. Phosphide Red Light Emitting Diode.

transistor c925

Abstract: DIODE C921
Contextual Info: P D - 9.1142 International [ËjüRectffier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ns @125°C, VGe = 15V Switching-loss rating includes all "tail" losses

MB88F332

Abstract: apix IC201-001 CU80F Cu80 FPT-208P-M06 MB88F33
Contextual Info: FUJITSU SEMICONDUCTOR MB88F332 FLASH Memory Product Parallel Writer Specification Ver.1.0 FUJITSU MICROELECTRONICS LIMITED 【Revision History】 Ver. 1.0 Data 2008/12/16 Description First Editinon 【Overview】 Items Detail Product name MB88F332 FLASH memory size

2SD1378

Contextual Info: 2SD1378 h i 7 > v 7 .$ / T ransistors 2SD1378 y 'J 3 > h 7 > y 7 ^ U k M y & W t ^ Ifffl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • • fl.JfjT|-;±|l/Dimensions Unit: mm) 1) V c e o =80V, T —x 2) V c eo = Pc = 1 0 W 2 T 7 " T T K 7 "f A t* 5 g „

HALL 550

Abstract: 550 WG9 signal hall sensor 550 wg9
Contextual Info: EW-450, EW-550 UNIPOLAR HALL EFFECT SWITCHES Note : It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue. ASAHI HALL EFFECT ICs ASAHI KASEI ELECTRONICS Hall Effect ICs are composed of a Ultla-high sensitive InSb Hall element and a signal processing IC