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siemens sab 82532

Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

marking code C1H SMD

Abstract: sab-c501-l24p
Contextual Info: SIEMENS 8-Bit CMOS Microcontroller C501 Preliminary • • • • • • • • • • • Fully compatible to standard 8051 microcontroller Versions for 12/24/40 MHz operating frequency 8 K x 8 ROM C501 -1R only 256 x 8 RAM Four 8-bit ports Three 16-bit Timers / Counters (Timer 2 with Up/Down Counter feature)

Contextual Info: • ñ 2 3 S bO S 0Dñl45fl 0«ïb SIEMENS PROFET BTS426L1 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • • Load dump and reverse battery protection1 VLoad dump Clamp of negative voltage at output V b b -i/o u T A v a la n c h e C la m p

Contextual Info: SIEM ENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • Versions for 12 MHz and 16 MHz operating frequency

Contextual Info: SIEMENS TEMPFET BTS115 Not for new design Replacement: BTS 115A • • • • • N channel Logic Level Enhancement mode Tem perature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Refer to circuit design hints (see chapter Technical Inform ation)

Contextual Info: SIEMENS IS D N S u b s c rib e r A c c e s s C o n tro lle r fo r U pn-In te rfa c e T e rm in a ls S m a rtL in k -P PSB 2197 Preliminary Data 1 CMOS 1C Features • Cost/performance-optimized Upn-interface transceiver, compatible to PEB 2096 OCTAT-P and

Contextual Info: SIEMENS Mini Smart Preliminary data • • • • • • • • • BSP 350 High-side Switch Short-circuit protection Overtemperature protection Overload protection Reverse battery protection Switching inductive load Clamp of negative output voltage with inductive loads

siemens scr

Abstract: scr 6A scr siemens 235L BTS620L1 BTS621L1 GPT05167
Contextual Info: m ¿castas ooôil^i iôt m SIEMENS PROFET BTS620L1 Smart Two Channel Highside Power Switch Features Product Summary • Load dump and reverse battery protection1 • Short-circuit protection VLoad dump • Current limitation Vbb operation) • Thermal shutdown

BSS97

Abstract: BSS 97 bss 97 transistor LC-R121R3P GPT05576 transistor bss
Contextual Info: SIEMENS SIPMOS Small-Signal Transistor VDS I D = 200 V = 1 .5 A ^ D S o n • • • BSS 97 = 2.0 Q N channel Enhancement mode Package: TO-202 ’ > Not for new design! Type O rdering code for version in bulk • BSS 97 Q 62702-S463 Maxim um Ratings

MARKING CODE SMD JW

Abstract: TXC CXO A51AC isdn modem 2S34 chmn m1p7 SAB-R3000
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E D • ô53St.0S QQBbbSa Ô m S l E ú SAB 82532 1 INTRODUCTION The Enhanced Serial Communication Controller ESCC2 SAB 82532 is a data communication device with two symmetrical serial channels. It has been designed to implement high-speed com­

siemens 4261-2

Abstract: P-T0220-5-1 PA 1300 4261s 6326c 4267 G Q67000-A9187 4260-2S Q67000-A9224
Contextual Info: Low Drop-Out-Spannungsregler Low Drop-Out Voltage Regulators Block. Diagram V ESO Protection •D*«.l. IwSef -Threshold Adjust -T im e Adjust ,ìigià<ióg: Self Protection ON/OFF Logic -O v e r Temperature -O v e r Voltage - S h o r t Circuit

Contextual Info: SIEMENS BGA 420 Si-MMIC-Amplifier in SIEGET 25-Technologie Preliminary data • Cascadable 50 Q-gain block • Unconditionally stable • Gain IS2 1 12 = 13 dB at 1.8 GHz /P3out = +9 dBm at 1.8 GHz \/D = 3 V, /D = typ. 6.4 mA • Noise figure NF= 2.2 dB at 1.8 GHz

SDA30C162

Abstract: 30C162 SDA 30C162 Siemens 3TB da 218 moy SMD NB18 30C163 adg smd NB b6 smd transistor
Contextual Info: SIEM ENS ICs for Consumer Electronics 8-Bit Microcontroller, ROMLESS SDA 30C163-2 Advanced Data Sheet 05.94 ÖB3SbQ5 0 0 ö0 5b 3 447 • SD A 30C163-2 Revision History: Original Version: 05.94 Previous Releases: Page Subjects changes since last revision

HD1131

Abstract: HD1131-G HD1131-R
Contextual Info: SIEMENS HD1131R/1133R SUPER-RED HD11310/11330 GREEN HD1131G/1133G red Common Anode/Common Cathode 0.53" 13.5 mm Seven Segment Numeric Display FEATURES • Rugged Encapsulated Package • 0.53" (13.5 mm) Digit Height • Choice of Colors: Red, Super-Red, Green

Contextual Info: SIEMENS 3 mm T1 LED, Non Diffused LS P380, LO P380, LY P380 LG P380, LP P380 Besondere Merkm ale • • • • • • farbloses, klares G ehäuse zur Einkopplung in Lichtleiter als optischer Indikator einsetzbar Lötspieße m it Aufsetzebene gegurtet lieferbar

Contextual Info: SIEMENS Double Differential Magneto Resistor FP 420 L 90 2 6 fingers on both sides free of lacquer 3) Center-distance between the Oiff.-Systems. Approx. w e ig h t 0.2 g GPX06896 Dimensions in mm Features Typical applications • • • • • • • •

siemens C167

Abstract: siemens sab-C167 SAB-C167-LM 711S C167 instruction set C167 loader t41e Siemens C16x Family Instruction Set Manual FE7C IT46
Contextual Info: SIEMENS C16x-Family of High-Performance CMOS 16-Bit Microcontrollers C167 Preliminary C167 16-Bit Microcontroller • High Performance 16-bit CPU with 4-Stage Pipeline • 100 ns Instruction Cycle Tim e at20-M Hz CPU Clock • 500 ns M ultiplication 1 6 x 1 6

Contextual Info: B 41 554 Capacitors with Screw Terminals SIKOREL 125, LL Grade Maximum reliability For highly professional switch-mode power supplies and capacitor banks Operating temperatures up to 125 °C Construction • Charge-discharge proof, polar • Aluminum case with insulating sleeve

Contextual Info: Metallized Polypropylene Film Capacitors MKP in Plastic Case B 32 620 . B 32 622 MKP stacked-film capacitors Smallest possible dimensions _ / _ b T I Construction • • • • Dielectric: polypropylene Stacked-film technology Plastic case (UL 94 V-0)

D53-92

Abstract: B37942
Contextual Info: Standard Chip Capacitors Z5U Y5U /2F4 fS M D l Features • Extremely high volumetric efficiency • Non-linear capacitance change Applications • • • • Blocking Coupling Decoupling Interference suppression Terminals • For soldering: silver-nickel-tin

BTS100

Contextual Info: m a235bOS 00013=15 0Ô2 SIEMENS Smart Highside Power Switch TEMPFET BTS 100 Features • • • • P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Refer to circuit design hints see chapter Technical Information

A1E transistor

Contextual Info: B S 107 Infineon tcehnologi*» SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 •^GS th = 0.8.2.0V Pin 1 VPT05548 Pin 2 S Pin 3 G Type Vbs fe BDS(on) Package Marking BS 107 200 V 0.13 A 26 a tO -92 BS 107 Type BS 107

Contextual Info: SIEMENS Fault Tolerant Differential CAN Transceiver TLE 6252 G Target Data Features • Data transmission rate up to 125 kBaud • Very low current consumption in stand-by and sleep mode • Optimized EMI behavior due to limited and symmetric dynamic slopes of CANL and

Contextual Info: SIEMENS 2-Phase Stepper-Motor Driver TLE 4727 Overview Bipolar 1C Features • 2 x 0.7 amp. outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Max. supply voltage 45 V • Outputs free of crossover current