UBCN Search Results

Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 30 June 2013. INCH-POUND MIL-PRF-19500/376K 30 March 2013 SUPERSEDING MIL-PRF-19500/376J 20 November 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER,

BC 241

Abstract: ABB Group EM 235 setting D-346 gp 431
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 15 June 2013. INCH-POUND MIL-PRF-19500/337L 15 March 2013 SUPERSEDING MIL-PRF-19500/337K AMENDMENT 3 3 June 2011 PERFORMANCE SPECIFICATION SHEET

2N7626

Abstract: 2N7626UB IRHLUB7970Z4 MOSFET cross-reference 2N7626UBN 3PAD jan,tx series semiconductors um 031 diode
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 June 2010. INCH-POUND MIL-PRF-19500/745B 18 March 2010 SUPERSEDING MIL-PRF-19500/745A 26 February 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL,

JANSR2N7626UB

Abstract: JANSF2N7626UB IRHLUBN7970Z4 IRHLUBC7970Z4 IRHLUB7930Z4 JANSR2N7626UBN PD-94764L
Contextual Info: PD-94764L IRHLUB7970Z4 JANSR2N7626UB 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT UB REF: MIL-PRF-19500/745 ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHLUB7970Z4 100K Rads (Si) 1.4Ω -0.53A JANSR2N7626UB

Contextual Info: SCHOTTKY BARRIER DIODE C30T02QL C30T02QL-11A s s a / zov FEATURES o | SQUARE-PÀ k I TO-263AB SMD Packaged in 24mm Tape and Reel : C30T02QL o Tabless TO-220: C30T02QL-11A ° Dual Diodes - Cathode Common o Low Forward Voltage Drop o High Surge Capability

2N7616

Abstract: IRHLUBC770Z4 ubcn 2N7616UB 2N7616UBN 2N7616UBCN MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR MOSFET cross-reference MIL-PRF-19500/744 irhlubn770z4
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 May 2010. MIL-PRF-19500/744A 4 February 2010 SUPERSEDING MIL-PRF-19500/744 21 May 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL,

PD-95813H

Abstract: JANSR2N7616UB JANSR2n7616 IRHLUBC770Z4
Contextual Info: PD-95813H IRHLUB770Z4 JANSR2N7616UB 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT UB REF: MIL-PRF-19500/744 ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHLUB770Z4 100K Rads (Si) 0.68Ω 0.8A JANSR2N7616UB

JANSR2N7616UB

Abstract: JANSR2n7616 JANSF2N7616UB JANSF2N7616UBCN JANSR2N7616UBC JANSF2N7616UBC IRHLUBC770Z4 JANSR2N76 IRHLUB7970Z4 irhlubn770z4
Contextual Info: PD-95813G IRHLUB770Z4 JANSR2N7616UB 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT UB REF: MIL-PRF-19500/744 ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHLUB770Z4 100K Rads (Si) 0.68Ω 0.8A JANSR2N7616UB

msc 5511

Abstract: i 7814 hs H713 PT001 3tf ei3 TNY 766 mba sem 1 movi UI02 640x8
Contextual Info: 5 7 -y . 5 / h - M O S H ftillS M O S Integrated Circuit PD78146,78148 8 1i y h • *y ^ JMPD78148 J, V 7 h • T ^ n n y i f j “ ^ ftJftH: jS L £ J i i 2 / N - VTR#£'<7> v ? ; u • v - x n n * & w t t zfc m -i& m T '? 0 • ?-fA P R O M t tz I t EPROM Sl&

transistor A562

Abstract: A561 transistor trapatt diode A4 transistor A562 transistor transistor a561 transistor smd marking a73 reverse-conducting thyristor trapatt A5 DIODE
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 April 2011. INCH-POUND MIL-PRF-19500P 20 October 2010 SUPERSEDING MIL-PRF-19500N 30 November 2005 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICES,

JANSR2N7626UB

Abstract: JANSF2N7626UBC JANSR2N7626UBN IRHLUBN7970Z4 IRHLUB770Z
Contextual Info: PD-94764L IRHLUB7970Z4 JANSR2N7626UB 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT UB REF: MIL-PRF-19500/745 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHLUB7970Z4 100K Rads (Si) 1.4Ω -0.53A JANSR2N7626UB

JANSR2N7616UB

Abstract: JANSF2N7616UB JANSR2n7616 JANSF2N7616UBCN IRHLUBN770Z4 JANSF2N7616UBC
Contextual Info: PD-95813G IRHLUB770Z4 JANSR2N7616UB 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT UB REF: MIL-PRF-19500/744 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHLUB770Z4 100K Rads (Si) 0.68Ω 0.8A JANSR2N7616UB

2N2907AUB

Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 16 May 2013. INCH-POUND MIL-PRF-19500/291U 16 February 2013 SUPERSEDING MIL-PRF-19500/291T 23 September 2011 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING,

2N7616

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 July 2013. INCH-POUND MIL-PRF-19500/744D 4 January 2013 SUPERSEDING MIL-PRF-19500/744C 1 May 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL,

FCQ10A06

Contextual Info: SCHOTTKY BARRIER DIODE FCQ10A06 io a / bov 3.11.1221 FEATURES o S im ila r to T 0 - 2 2 0 A B C a se o F u lly M o ld ed Is o la tio n o D u al D io d es - C a th o d e C o m m o n o L o w F o r w a r d V o lta g e D ro p o L o w P o w e r L o ss , H ig h E ffic ie n c y