UGF16085 Search Results

UGF16085 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
UGF16085		Cree	85W,1.661GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET		Original	PDF	518.61KB	10

UGF16085 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: UGF16085 85W,1.661GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed specially for satellite communication applications in frequency range from 1626 to 1661 MHz. Rated with a minimum output power of 85W. This device is ideal for 16QAM, TDMA,	Original	UGF16085 661GHz, 16QAM, UGF16085	PDF
1661m Abstract: transistor 1661 equivalent Cree Microwave TANT-E UGF16085 85-W 85w sot23 Contextual Info: UGF16085 85W,1.661GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed specially for satellite communication applications in frequency range from 1626 to 1661 MHz. Rated with a minimum output power of 85W. This device is ideal for 16QAM, TDMA,	Original	UGF16085 661GHz, 16QAM, 85Whorized UGF16085 1661m transistor 1661 equivalent Cree Microwave TANT-E 85-W 85w sot23	PDF
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: UGF16085 85W,1.661GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed specially for satellite communication applications in frequency range from 1626 to 1661 MHz. Rated with a minimum output power of 85W. This device is ideal for 16QAM, TDMA,

Original

UGF16085 661GHz, 16QAM, UGF16085

PDF

1661m

Abstract: transistor 1661 equivalent Cree Microwave TANT-E UGF16085 85-W 85w sot23
Contextual Info: UGF16085 85W,1.661GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed specially for satellite communication applications in frequency range from 1626 to 1661 MHz. Rated with a minimum output power of 85W. This device is ideal for 16QAM, TDMA,

Original

UGF16085 661GHz, 16QAM, 85Whorized UGF16085 1661m transistor 1661 equivalent Cree Microwave TANT-E 85-W 85w sot23

PDF

semiconductors cross reference

Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b
Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30

Original

BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b

PDF