UHF/POWER AMPLIFIERS Search Results
UHF/POWER AMPLIFIERS Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN |
![]() |
||
MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN |
![]() |
||
MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
![]() |
||
MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
![]() |
||
MGN1S0508MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-8V GAN |
![]() |
UHF/POWER AMPLIFIERS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
2SC2586Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in m illim eters The 2SC2586 is an NPN silicon epitaxial transistor designed for UHF-band medium power amplifiers. |
OCR Scan |
2SC2586 2SC2586 P11693EJ1V0DS00 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF1032 The RF Line UHF Power TVansistor . . . designed primarily for large-signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers 6.0 W, TO 1.0 GHz UNEAR UHF POWER TRANSISTOR |
OCR Scan |
MRF1032 MRF1032 | |
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Tkansistor . . . designed primarily for wideband, large-signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers 4.5 W, TO 1.0 GHz LINEAR UHF POWER TRANSISTOR |
OCR Scan |
MRF1031 | |
MHW2727
Abstract: Amplifier Modules motorola MHW2727-3 sps 1951 Motorola UHF Power Amplifier Module
|
Original |
MHW2727/D MHW2727-3 420AC MHW2727 Amplifier Modules motorola MHW2727-3 sps 1951 Motorola UHF Power Amplifier Module | |
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC 2586 is an NPN silicon epitaxial transistor designed for UHF-band medium pow er amplifiers. |
OCR Scan |
2SC2586 11693EJ1V0D | |
MHW820-1
Abstract: MHW820-3 MOTOROLA hybrid amplifiers MHW820-3
|
OCR Scan |
MHW820-1 MHW820-2 MHW820-3 MHW820-1 MHW820-3) EB-107. MHW820-3 MOTOROLA hybrid amplifiers MHW820-3 | |
Motorola UHF Power Amplifier Module
Abstract: MHW2805-1 MHW2805-2 420AB
|
Original |
MHW2805/D MHW2805-1 MHW2805-2 420AB Motorola UHF Power Amplifier Module MHW2805-1 MHW2805-2 420AB | |
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC2586 is an NPN silicon epitaxial transistor designed ^ 9 .4 MAX. for UHF-band medium pow er amplifiers. |
OCR Scan |
2SC2586 2SC2586 | |
Contextual Info: MOTOROLA Order this document by MHW707/D SEMICONDUCTOR TECHNICAL DATA MHW707-1 MHW707-2 MHW707-3 MHW707-4 The RF Line UHF Power Amplifiers Designed for 7.5 Volt UHF power amplifier applications in industrial and commercial equipment primarily hand portable radios. |
Original |
MHW707/D MHW707-1 MHW707-2 MHW707-3 MHW707-4 MHW707â | |
MHW2805-1
Abstract: MHW2805-2 Motorola UHF Power Amplifier Module
|
Original |
MHW2805/D MHW2805-1 MHW2805-2 MHW2805-1 MHW2805-2 Motorola UHF Power Amplifier Module | |
LF1002
Abstract: MHW2821 MHW2821-1 MHW2821-2 phcenix MHW2621-1
|
Original |
MHW28211D MHW2821-1 MHW2821-2 MHW2821 MHW2821 Arizona85036 2PHX246180-O 23E1l LF1002 MHW2821-1 MHW2821-2 phcenix MHW2621-1 | |
MHW2821-1
Abstract: 81 210 W 20 MHW2821 MHW2821-2 Motorola UHF Power Amplifier Module motorola application note amplifier power
|
Original |
MHW2821/D MHW2821-1 MHW2821-2 MHW2821 301AB MHW2821-1 81 210 W 20 MHW2821-2 Motorola UHF Power Amplifier Module motorola application note amplifier power | |
MHW2821-1
Abstract: MHW2821 MHW2821-2
|
Original |
MHW2821/D MHW2821-1 MHW2821-2 MHW2821 301AB MHW2821-1 MHW2821-2 | |
BLV862Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV862 UHF linear push-pull power transistor Preliminary specification File under Discrete Semiconductors, SC08a 1996 Jun 11 Philips Semiconductors Preliminary specification UHF linear push-pull power transistor FEATURES |
Original |
BLV862 SC08a OT262B SCA49 127041/1200/02/pp8 BLV862 | |
|
|||
Contextual Info: b S H T û E 1! D O lflO öl ÖTT MITSUBISHI SEMICONDUCTOR GsAsMMIC MGF7113P UHF BAND GaAs POWER AMPLIFIER IC DESCRIPTION Unlttmillimeters OUTLINE DRAWING MGF7113P is a monolithic microwave integrated circuit for use in UHF band power amplifiers. 3 C Z I@ |
OCR Scan |
MGF7113P MGF7113P 900MHz 240mA | |
BY206
Abstract: C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor
|
Original |
BLW34 BY206 C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor | |
BLW33
Abstract: BY206 BZY88-C3V3 SOT122A BZY88C-3V3 application note blw33 BZY88 npn transistor dc 558
|
Original |
BLW33 BLW33 BY206 BZY88-C3V3 SOT122A BZY88C-3V3 application note blw33 BZY88 npn transistor dc 558 | |
BY206
Abstract: BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430
|
Original |
BLW32 BY206 BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430 | |
cermolox
Abstract: TP105 burle "Power Tube"
|
Original |
||
2SC2762Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2762 NPN SILICON EPITAXIALTRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SC2762 is an NPN silicon epitaxial transistor designed for in millimeters UHF-band medium pow er amplifiers. |
OCR Scan |
2SC2762 2SC2762 | |
Power UHF amplifiers 432 MHz
Abstract: Transistor 1308 transistor 1334 SOT634A BLF2022-125
|
Original |
M3D792 BLF2022-125 OT634A SCA75 613524/03/pp8 Power UHF amplifiers 432 MHz Transistor 1308 transistor 1334 SOT634A BLF2022-125 | |
2222 031 capacitor philips
Abstract: BLV861 SMD ic catalogue transistor bd139 mexico Ceramic capacitor 105 philips power transistor bd139
|
Original |
M3D099 BLV861 SCA57 127047/00/05/pp12 2222 031 capacitor philips BLV861 SMD ic catalogue transistor bd139 mexico Ceramic capacitor 105 philips power transistor bd139 | |
TRANSISTOR SMD MARKING CODE w2
Abstract: smd TRANSISTOR code marking w2 smd transistor marking u1 SMD transistor MARKING CODE 312 TEKELEC all transistor book AN10229 transistor smd marking code c3 smd transistor marking C14 8DS3
|
Original |
M3D379 BLF1820-90 15-Aug-02) TRANSISTOR SMD MARKING CODE w2 smd TRANSISTOR code marking w2 smd transistor marking u1 SMD transistor MARKING CODE 312 TEKELEC all transistor book AN10229 transistor smd marking code c3 smd transistor marking C14 8DS3 | |
2222 031 capacitor philips
Abstract: transistor bd139 BLV862 BD139 philips power transistor bd139 AN98014 smd transistor Nr 912 smd transistor SMD transistor L17 UT70-25
|
Original |
M3D091 BLV862 125002/05/pp12 2222 031 capacitor philips transistor bd139 BLV862 BD139 philips power transistor bd139 AN98014 smd transistor Nr 912 smd transistor SMD transistor L17 UT70-25 |