UHF 3W AMPLIFIER Search Results

2SC2106

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2106 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONSFEATURES : . Output Power : P0=12W Min. (f=470MHz, VCC=12.6V, Pi=3W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=15V, Pi=3W, f=470MHz

2SC2380

Abstract: uhf 3W amplifier 2SC238
Contextual Info: 2SC2380 SILIC O N NPN E P IT A X IA L P LA NA R TYPE Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=12W Min. (f=470MHz, VCC=12.6V, Pi=3W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR § VCC=12.6V, Pi=3W, f=470MHz

10ID

Abstract: 2SC3006
Contextual Info: TOSHIBA 2SC3006 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3006 UHF BAND POWER AMPLIFIER APPLICATIONS • Output Power : Unit in mm Po = 3W Min. (f= 470MHz, V e e = 12.6V, Pi = 0.4W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING

2SC3006

Abstract: 2SC300
Contextual Info: 2SC3006 SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES : . Output Power : P0=3W Min. (f=470MHz, Vcc=12.6V, Pi=0.4W) MAXIMUM RATINGS (Ta-25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage

Contextual Info: TO SHIBA 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2642 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. • Output Power : Po = 12W Min. (f= 470MHz, V ee = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage

10ID

Abstract: 2SC2642
Contextual Info: TOSHIBA 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2642 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS Output Power : Po = 12W Min. (f= 470MHz, V e e = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT

Contextual Info: TOSHIBA 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2642 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. Output Power : Po = 12W Min. (f= 470MHz, VCC = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) UNIT V V V 1. EMITTER A 2. BASE 3. EMITTER

P104W

Abstract: 2SC2104
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2104 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES: . Output Power : P0=3W Min. (f=470MHz, VCC=12.6V, P1=0.4W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VcC=15V, Pi=0.4W, f=470MHz

2SC2391

Abstract: pjw1
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2391 Unit In mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=3W Min. (f=470MHz, VCC=12.6V, Pi=0.4W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCc=15V, Pi=0.4W, f=470MHz

2SC2391

Abstract: 10ID
Contextual Info: ~5Í T O S H I B A -CDISCRETE/OPTO} 909 725 0 TOSHIBA dF|t[H7S50 00G7S5ä CD ISC RETE/OPTO SILICON NPN EPITAXIAL PLANAR TYPE_ Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : Po= 3W Min.) (f=470MHz, VCC=12.6V, Pi=0.4W)

Contextual Info: T O SH IB A 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 ^ f ? fi J 7 UHF BAND POWER AMPLIFIER APPLICATIONS • U nit in mm O utput Power : Po = 12W Min. (f= 470MHz, V c c = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb D e ”! T T 72S □ DD07S S4 DISCRETE/OPTO SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=12W(Min.) (f=470MHz, VCC=12.6V, Pi=3W) . 100% Tested for Load Mismatch Stress at All Phase

Contextual Info: TO SHIBA 2SC3006 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE K f í n n fi UHF BAND POWER AMPLIFIER APPLICATIONS Output Power Unit in mm Po = 3W Min. r f= 4 .7 0 iv m 7 V. / in = 1 9. RV -P i- = n 4.W1 . , MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC

SOT223 MARKING L5

Abstract: L42 marking transistor THN6701B FR4 dielectric constant 4.6 FR4 dielectric constant vs temperature transistor 1608 transistor L42
Contextual Info: THN6701B Semiconductor SiGe NPN Transistor Unit in mm SOT-223 □ Applications 6.5 - VHF and UHF power amplifier 3.0 4 - High power gain 7.0 3.5 □ Features GP = 14 dB at VCE = 6 V, IC = 400 mA, f = 465 MHz - High power 1 POUT = 35 dBm 3W at VCE = 6 V, ICQ = 50 mA, f = 465 MHz

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TO SHIBA Sb SE I TOTTESD DGDT^flM 3 bôC CDIS C R E T E /O PTO SILICON NPN EPITAXIAL P LA NA R TYPE_ 07484 2 S C 2 0 7 ", j 3 - o s ' 1 4 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=3W Min.')

2SC2106

Abstract: 10ID
Contextual Info: SÍ TOSHIBA íDISCRETE/OPTO> 9097 250 TO SHIBA DE I^GTTaSD QODTMflfl O CD IS C R E T E /O P T O SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONSFEATURES : . Output Power : P0=12W Min.) (f=470MHz, V CC=12.6V, Pi=3W) . 100% Tested for Load Mismatch Stress at All Phase

10ID

Abstract: 2SC2380 13Supply 2SC2380 TOSHIBA
Contextual Info: TOSHIBA {DISCRETE/OPTO} 909 725 0 T OSH IBA Sb 1>F| L O T O S O 0007524 0 J DISCRETE/OPTO ?3- Oj SILICO N NPN E P IT A X IA L PLANAR TYPE Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=12W(Min.) (f=470MHz, VCC=12.6V, Pi=3W)

Contextual Info: 5b TOSHI BA - { D I S C R E T E / O P T O } 9097250 TOSHIBA DÉT| T C m S S D □Dü7S2fi DI SC RE TE /O PT O> SILICON NPN EPITA X IA L PLANAR TYPE Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES: . Output Power : P0=3W(Min. (f=470MHz, VCc=12.6V, Pi=0.4W)

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb DE I ciGli7aSD □007Mñfl O 56C 0 7 * 8 8 D I S C R E T E / O P T O DT*J3-ûf SILICON NPN EPITA X IA L PLANAR TYPE Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONSFEATURES : . Output Power : P 0=12W(Min.) (f =4 70 MH z, V cc= 1 2 .6V, Pi=3W)

PO7C

Abstract: 2SC2380 2SC238
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2380 Unit in m m UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0 =12W Min. (f=470MHz, V C C=12.6V, Pi=3W) . 1 0 0 % T e s t e d f o r L o a d M i s m a t c h S t r e s s at A l l P h a s e A n g l e s w i t h 30:1 V S W R

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1966 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1966 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on UHF band mobile radio applications. D im ensions in mm FEATURES •

2SC2642

Contextual Info: J.£.i6.£.u <^>£.m.i- -ona\j.ckoi L/~* 10 duct i, Line. u Cx 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SC2642 Unit in nun UHF BAND POWER AMPLIFIER APPLICATIONS • Output Power : Po = 12W(Min.)

transistor D 1557

Abstract: RD15HVF1 RD15HV D 1413 transistor MOSFET RF POWER TRANSISTOR VHF 703 MOSFET TRANSISTOR Semiconductor 1346 transistor transistor 45 f 123 UHF POWER mosfet 3w transistor d1 391
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz15W 520MHz,15W 3.2+/-0.4 1.3+/-0.4 3.6+/-0.2 2 9+/-0.4 1.2+/-0.4 0.8+0.10/-0.15 APPLICATION 1 2 3 For output stage of high power amplifiers in VHF/UHF

ALL BAND TV TUNER IC

Abstract: DIODE CG4 sony tv circuit diagram pll uhf oscillator sony TV TUNER pin uhf varicap varicap diode tv tuner t1ls tv tuner ic CXA3025N
Contextual Info: SONY CXA3095N A ll Band TV Tuner 1C VHF-CATV-UHF Description The CXA3095N is a single chip TV tuner 1C which performs as an oscillator, mixer for VHF-CATV and UHF bands. An IF amplifier is also provided. This 1C adopts a 24-pin SSOP package (0.8mm pitch) in response to the trend toward miniaturizing