UHF DUAL GATE Search Results

SGM2016AM

Abstract: SGM2016AP dual-gate
Contextual Info: SGM2016AM/AP GaAs N-channel Dual-Gate MES FET Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,

3SK166A

Abstract: 3SK166A-0 3SK166A-2 N-Channel, Dual-Gate FET
Contextual Info: 3SK166A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to

SGM2016AN

Abstract: dual-gate SGM2016 N-Channel, Dual-Gate FET
Contextual Info: SGM2016AN GaAs N-channel Dual-Gate MES FET Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers.

dual-gate

Contextual Info: SONY SGM2016AM/AP GaAs N-channel Dual-Gate MES FET Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-nolse amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,

SONY 877

Contextual Info: SONY 3SK166A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-nolse amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to

Contextual Info: SO N Y SGM2016AN GaAs N-channel Dual-Gate MES FET Prelim inary Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,

3SK166A

Abstract: nf 922 3SK166A-0 3SK166A-2 C 3807 transistor 3SK166
Contextual Info: 3SK166A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF

Contextual Info: 3SK166A SONY GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK166A is an N-channel dual gate GaAs M ES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to

0945 transistor

Abstract: Sony Semiconductor M-281 SGM2016AN dual-gate
Contextual Info: SONY SGM2016AN GaAs N-channel Dual-Gate MES FET Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-nolse amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers.

3SK166A

Abstract: 3SK166A-0 3SK166A-2 3SK1
Contextual Info: 3SK166A GaAs N-channel Dual Gate MES FET Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance.

Contextual Info: HA21001MS VHF/UHF Tuner Use GaAs IC Features • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET • Low noise, low distortion • Surface mount package UHF RF input VHF RF input 2 1 18 AC GND2 AC GND1

3SK80

Contextual Info: 3SK80 MOS F ET SILICON N Ç HANNEL DUAL GATE MOS FET UHF AMPLIFIER UHF T V TUNER R F AMPLIFIER UHF a « * « « « UHF T V * * - * * « * * « * t. * - n c m i I r - »1 Cm > j r *> : otm «. / • * W t« 'P h w i— i • - la mm I H*t» —< > j,-n

BF980

Abstract: BF980A
Contextual Info: BF980A SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected. Intended for UHF applications, such as UHF television tuners, with 12 V supply voltage and professional communication equipment.

Dual-Gate Mosfet

Contextual Info: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF997 PINNING APPLICATIONS • UHF and VHF applications such as UHF/VHF television tuners and professional communications equipment. • Especially intended for use in pre-amplifiers in CATV

3SK146

Contextual Info: 3SK146 SILICON N CHANNEL DUAL GATE MOS TYPE TV TUNER, UHF RF AMPLIFIER APPLICATIONS. Unit in mm TV TUNER UHF MIXER APPLICATIONS. FEATURES: . Superior Cross Modulation Performance. . Low Reverse Transfer Capacitance : CrSs=0.02pF Typ. . Low Noise Figure : NF=2.6dB(Typ.)

Contextual Info: SILICON N CHANNEL DUAL GATE MOS TYPE 3SK127 T V TUNER, UHF RF AM PLIFIER APPLICATIONS. T V TUNER, UHF M IXER APPLICATIONS. • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 0.03pF Max. • Low Noise Figure : NF = 3.2dB (Typ.)

Contextual Info: BF980A J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected. Intended for UHF applications, such as UHF television tuners, with 12 V supply voltage and professional communication equipment.

3SK127

Contextual Info: TOSHIBA 3SK127 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 27 TV TUNER, UHF RF AM PLIFIER APPLICATIONS TV TUNER, UHF M IXER APPLICATIONS • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 0.03pF Max.

Contextual Info: TOSHIBA 3SK127 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 27 TV TUNER, UHF RF AM PLIFIER APPLICATIONS. TV TUNER, UHF M IXER APPLICATIONS. • • • Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.03pF Max.

3SK320

Abstract: "GaAs N-channel Dual Gate" 3SK3
Contextual Info: 3SK320 Preliminary TOSHIBA Field Effect Transistor GaAs N-Channel Dual Gate MES Type 3SK320 UHF Band Low Noise Amp UHF Band Mix Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Gate 1-drain voltage VG1DO −6 V Gate 2-drain voltage

dual-gate

Contextual Info: Short-form product specification Philips Sem iconductors Silicon N-channel dual-gate MOS-FET BF980A APPLICATIONS • UHF applications such as UHF television tuners with 12 V supply voltage and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic X-package

3SK320

Abstract: 1202 toshiba transistor
Contextual Info: 3SK320 Preliminary TOSHIBA Field Effect Transistor GaAs N-Channel Dual Gate MES Type 3SK320 UHF Band Low Noise Amp UHF Band Mix Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Gate 1-drain voltage VG1DO -6 V Gate 2-drain voltage VG2DO

3SK320

Abstract: L 0946
Contextual Info: TOSHIBA TENTATIVE 3SK320 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND LOW NOISE AMP GaAs N-CHANNEL DUAL GATE MES TYPE 3SK320 UHF BAND MIX MAXIMUM RATINGS Ta = 25°C SYMBOL RATING UNIT Gate 1-Drain Voltage Gate 2-Drain Voltage VG1DO V V Gate 1-Source Voltage

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D454 BGY280 UHF amplifier module Preliminary specification 2000 Oct 31 Philips Semiconductors Preliminary specification UHF amplifier module BGY280 PINNING - SOT559A FEATURES • Dual band GSM amplifier PIN • 3.6 V nominal supply voltage