UHF VHF TRANSFORMER SCHEMATIC Search Results

Contextual Info: UM10710 UBA20270DB1122 - 35 W/46 V/690 mA LED driver demo board Rev. 2 — 25 September 2013 User manual Document information Info Content Keywords UBA20270DB1122, demo board, LED, non-dimmable, PFC Abstract The UBA20270DB1122 is a non-dimmable 230 V mains 35 W LED driver

pin diagram for IC cd 1619 fm receiver

Abstract: ml 1136 triac Transistor 337 DIODE 2216 yagi-uda Antenna bistable multivibrator using ic 555 NEC plasma tv schematic diagram Digital Panel Meter PM 428 555 solar wind hybrid charge controller CLOVER-2000
Contextual Info: Index Editor’s Note: Except for commonly used phrases and abbreviations, topics are indexed by their noun names. Many topics are also cross-indexed. The letters “ff” after a page number indicate coverage of the indexed topic on succeeding pages. A separate Projects index follows the main index.

TOKO 10.7 transformer

Abstract: WBC1-1TL CR05-101J AVX 1005 j142 TRANSFORMER RF 4.5 MHZ TOKO passive vhf mixer TOKO 100KHz transformer j172 j178
Contextual Info: LT5512 1kHz-3GHz High Signal Level Active Mixer U FEATURES DESCRIPTIO • The LT 5512 is an active double-balanced mixer IC, optimized for high linearity HF, VHF and UHF applications. The IC includes an integrated LO buffer amplifier to drive the mixer and an RF buffer amplifier for improved LO-RF

Contextual Info: LT5512 1kHz-3GHz High Signal Level Active Mixer U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Broadband RF, LO and IF Operation High Input IP3: >20dBm from 30MHz to 900MHz +17dBm at 1900MHz Typical Conversion Gain: 1dB SSB Noise Figure: 11dB at 900MHz

Intermediate frequency transformer 455khZ

Abstract: NE602 application note NE602 philips double conversion narrow band FM receiver 10.7Mhz 15Khz crystal filter SA602 NE602 equivalent 10.7MHz, shielded IF transformer SA602 Double Balanced Mixer and Oscillator if transformer 455khz
Contextual Info: RF COMMUNICATIONS PRODUCTS AN1993 High sensitivity applications of low-power RF/IF integrated circuits 1997 Aug 20 Philips Semiconductors Philips Semiconductors Application note High sensitivity applications of low-power RF/IF integrated circuits AN1993 ABSTRACT

TDA5737 application note

Abstract: 714 diode varicap tv main board schematic diagram philips AN00074 TSA5060A TDA5060A voltage controlled oscillator ic 555 TDA5737 TP97036 voltage controlled oscillator using ic 555
Contextual Info: APPLICATION NOTE - TSA5060A TERRESTRIAL LOW-NOISE PLL DEMONSTRATION BOARD AN00074 VERSION 1.0 Philips Semiconductors TP97036.2/W97 TRAD Philips Semiconductors - TSA5060A DEMONSTRATION BOARD Application Note AN00074 Purchase of Philips I2C components conveys a

NE602 ic

Abstract: NE602 application note NE602 Signetics NE602 NE602 equivalent circuit NE602 equivalent 10.7Mhz 15Khz crystal filter NE602 application p 605 transistor equivalent NE602 mixer
Contextual Info: S ig n e tic s A N 1993 High Sensitivity Applications of Low-Power RF/IF Integrated Circuits Linear Products Application Note ABSTRACT This paper discusses four high sensitivity receivers and IF Intermediate Frequency strips which utilize intermediate frequencies

ne602

Abstract: NE602 equivalent NE602 application note NE602 equivalent circuit NE602 application Signetics NE602 NE602N NE602 ic AN1982 10.7MHz, shielded IF transformer
Contextual Info: AN 1993 Signetics High Sensitivity Applications of Low-Power RF/IF Integrated Circuits Unear Products Application Note ABSTRACT This paper discusses four high sensitivity receivers and IF Intermediate Frequency strips which utilize intermediate frequencies

BROWN BOVERI guanella

Abstract: transistor c 5287 800w rf power amplifier circuit diagram transmission line transformers Design of H.F. Wideband Power Transformers Practical Wideband RF Power Transformers 300w rf amplifier uhf guanella transformers 325 339 H C 5287 equivalent
Contextual Info: RF APPLICATION NOTE: PUSH-PULL CIRCUITS and WIDEBAND TRANSFORMERS Push-Pull Transistors Semelab plc produces a wide range of push-pull MOSFETs and this application note is intended as a guide to some circuit design principles which are particularly appropriate when using these

LTC5510IUF

Abstract: LTC5510
Contextual Info: LTC5510 1MHz to 6GHz Wideband High Linearity Active Mixer Features n n n n n n n n n n n n n n Description Input/LO Frequency Range to 6GHz 50Ω Matched Input from 30MHz to >3GHz Capable of Up- or Down-Conversion OIP3: 27dBm at fOUT = 1575MHz 1.5dB Conversion Gain

Contextual Info: SD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 150W MIN. WITH 12.5 dB gain @175 MHz DESCRIPTION The SD2921 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2921 is

1200 uF 63V capacitor

Abstract: 1200 uF 63V capacitor 2% SD2921 SD2921-10 VK200 m 404 g
Contextual Info: SD2921-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 150W MIN. WITH 12.5 dB gain @175 MHz . THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES DESCRIPTION

6W toroid TRANSFORMER

Abstract: SC1318 SD2921 VK200 556 b uhf vhf transformer schematic
Contextual Info: SD2921  RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz DESCRIPTION The SD2921 is a gold metallized N-Channel MOS

SD2921

Abstract: SC13200 SC1318
Contextual Info: SD2921 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz DESCRIPTION The SD2921 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2921 is

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance

philips ecg master replacement guide

Abstract: ecg semiconductors master replacement guide ECG transistor replacement guide book free philips ecg semiconductors master replacement guide oz 8602 gn AC digital voltmeter using 7107 smd glass zener diode color codes cd 1619 CP fm radio russian transistor cross-reference yd 7377
Contextual Info: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete

SD2931

Abstract: VK200 resistor 680 ohm
Contextual Info: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for

Power Transformer EE-19

Abstract: EE-19 transformer arco 404 SD2931 VK200 resistor 680 ohm 16-100pF
Contextual Info: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for

RF POWER TRANSISTOR

Abstract: resistor 680 ohm
Contextual Info: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

6W toroid TRANSFORMER

Abstract: SD2921-10 uhf 150w mosfet SD2921 pin configuration 20k ohm potentiometer SC1318
Contextual Info: SD2921-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

EE-19 transformer

Abstract: Power Transformer EE-19 SD2931 VK200 resistor 680 ohm 25 ohm semirigid
Contextual Info: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz M174 epoxy sealed DESCRIPTION The SD2931 is a gold metallized N-Channel MOS

resistor 680 ohm

Contextual Info: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for

uhf 150w mosfet

Abstract: SD2921 10000 uF 63V capacitor RF POWER TRANSISTOR 1200 uF 63V capacitor 1200 uF 63V capacitor 2% capacitor 100 uf 63v TC 2,2 uF 20V SD2921-10 VK200
Contextual Info: SD2921-10  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

ECG transistor replacement guide book free

Abstract: philips ecg master replacement guide one chip tv ic 8873 ecg semiconductors master replacement guide philips ecg semiconductors master replacement guide cd 1619 CP fm radio smd transistor 5AW replacement of bel 187 transistor ecg philips semiconductor master book SUBSTITUTE FOR A bel 187 transistor
Contextual Info: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete