Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    UIS TEST Search Results

    UIS TEST Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    SNJ54ACT8990HV
    		Texas Instruments Test Bus Controllers 68-CFP -55 to 125 Visit Texas Instruments Buy
    5962-9322801MXA
    		Texas Instruments Test Bus Controllers 68-CFP -55 to 125 Visit Texas Instruments Buy
    SN74SSTUB32866NMJR
    		Texas Instruments 25-Bit configurable registered buffer with address-parity test Visit Texas Instruments Buy

    UIS TEST Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    912 MOSFET

    Abstract: DOC-70 AN601
    Contextual Info: VISHAY SILICONIX Power MOSFETs Application Note 912 Power MOSFET in UIS/Avalance Applications By Kandarp Pandya Inductive loads require adequate attention in electronic control circuits, since otherwise they can lead to unclamped inductive switching UIS or avalanche conditions, which


    Original     		SQM110N04-03 AN601 22-Dec-08 912 MOSFET DOC-70 AN601 PDF

    RFP70N06

    Abstract: AN9322 AVALANCHE TRANSISTOR
    Contextual Info: Harris Semiconductor No. AN9322.1 Harris Power MOSFET January 1996 A Combined Single Pulse and Repetitive UIS Rating System Author: Wallace D. Williams the +25oC line, the application is beyond the UIS rating of the device and the user stands a risk of device failure. If the


    Original     		AN9322 1-800-4-HARRIS RFP70N06 AVALANCHE TRANSISTOR PDF

    Contextual Info: A Product Line of Diodes Incorporated DMN4034SSS ADVANCE INFORMATION 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(on) ID TA = 25°C • 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance


    Original     		DMN4034SSS AEC-Q101 DS32106 PDF

    SiR642DP

    Abstract: SIR642
    Contextual Info: New Product SiR642DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 TrenchFET Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see


    Original     		SiR642DP SiR642DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIR642 PDF

    Contextual Info: New Product SiR642DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 TrenchFET Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see


    Original     		SiR642DP SiR642DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on ID TA = +25C • 100% Unclamped Inductive Switch (UIS) test in production  Low on-resistance 68mΩ @ VGS= 10V 5.6A 


    Original     		DMN6068SE AEC-Q101 DS32033 PDF

    Contextual Info: DMJ7N70SK3 700V N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary V BR DSS • 100% Unclamped Inductive Switch (UIS) test in production  Low Gate Input Resistance  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 


    Original     		DMJ7N70SK3 AEC-Q101 DS36907 PDF

    Contextual Info: New Product SiR642DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 TrenchFET Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see


    Original     		SiR642DP SiR642DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    g4406ls

    Abstract: g4406
    Contextual Info: DMG4406LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C • 100% Unclamped Inductive Switch (UIS) test in production  Low On-Resistance 11mΩ @ VGS = 10V 10.3A  Low Input Capacitance 9.3A  Fast Switching Speed


    Original     		DMG4406LSS DS35539 g4406ls g4406 PDF

    Contextual Info: A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on ID TA = +25C • 100% Unclamped Inductive Switch (UIS) test in production  Low on-resistance 68m @ VGS= 10V 5.6A 


    Original     		DMN6068SE DS32033 PDF

    SQJ469EP

    Contextual Info: SQJ469EP www.vishay.com Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		SQJ469EP AEC-Q101 2002/95/EC SQJ469EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQJ469EP PDF

    Contextual Info: SQJ964EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		SQJ964EP AEC-Q101 2002/95/EC SQJ964EP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SQJ964EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		SQJ964EP AEC-Q101 2002/95/EC SQJ964EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SQJ461EP www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		SQJ461EP AEC-Q101 2002/95/EC SQJ461EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SQS420EN www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		SQS420EN AEC-Q101 2002/95/EC SQS420EN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SQS400EN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		SQS400EN AEC-Q101 2002/95/EC SQS400EN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SQ1421EEH www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		SQ1421EEH AEC-Q101 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Contextual Info: SQS420EN www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		SQS420EN AEC-Q101 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SQ1421EEH www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		SQ1421EEH AEC-Q101 2002/95/EC OT-363 SC-70 SC-70 SQ1421EEH-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Contextual Info: SQ2318ES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested


    Original     		SQ2318ES O-236 OT-23) AEC-Q101 2002/95/EC SQ2318ES* OT-23 SQ2318ES-T1-GE3 11-Mar-11 PDF

    SQJ401EP

    Contextual Info: SQJ401EP www.vishay.com Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		SQJ401EP AEC-Q101 2002/95/EC SQJ401EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQJ401EP PDF

    67401

    Contextual Info: SQ3469EV www.vishay.com Vishay Siliconix Automotive P-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested


    Original     		SQ3469EV AEC-Q101 2002/95/EC SQ3469EV-T1-GE3 11-Mar-11 67401 PDF

    Contextual Info: SQJ963EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		SQJ963EP AEC-Q101 2002/95/EC SQJ963EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SQJ469ep

    Contextual Info: SQJ469EP www.vishay.com Vishay Siliconix Automotive P-Channel 80 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		SQJ469EP AEC-Q101 2002/95/EC SQJ469EP-T1-GE3 11-Mar-11 SQJ469ep PDF