ULTRA FAST DIODE 400V 5A Search Results

50VF30

Abstract: 50VF30F 50VF40 50VF40F
Contextual Info: FAST RECOVERY DIODE 50VF30 50VF40 50VF30F 50VF40F 5.5A/300~400V/trr : 40nsec FEATURES 2.38M AX .094 ° T0-251AA Case n TO-252AA Case, Surface Mount Device • Ultra - Fast Recovery o Low Forward Voltage Drop ° Low Power Loss » High Surge Capability

Contextual Info: FAST RECOVERY DIODE 50VF30 50VF40 50VF30F 50VF40F 5.5A/300~ 400V/trr : 40nsec FEATURES • TO-251AA Case o TO-252AA Case, Surface Mount Device 0 Ultra - Fast Recovery o Low Forward Voltage Drop ° Low Power Loss « High Surge Capability • 100 Volts thru 400 Votls

F5KF40

Contextual Info: FAST RECOVERY DIODE 5.5A/300 400V/trr:45nsec 5KF30B F5KF30B 5KF40B F5KF40B FEATURES 0 Similar to T0-220AC and TO-220AB Case ‘ Fully Molded Isolation Case F- Type • Ultra - Fast Recovery ° Low Forward Voltage Drop Efficiency ° Low Power Loss, High ° High Surge Capability

Contextual Info: FAST RECOVERY DIODE 50VF30 50VF40 50VF30F 50VF40F 5.5A/300— 400V/trr : 40nsec FEATURES 0 TO-251AA Case » TO-252AA Case, Surface Mount Device ° Ultra - Fast Recovery « Low Forward Voltage Drop ° Low Power Loss ° High Surge Capability « 100 Volts thru 400 Votls

30KF40B

Abstract: 30KF40E 30KF30B 30KF30E
Contextual Info: FAST RECOVERY DIODE 30KF30E 30KF40E 30KF30B 30KF40B 33A/300~400V/trr : 60nsec FEATURES 3.«.: tic * Similar to TO-247AC Case I ° Ultra - Past Recovery h 4.31.169 * Low Forward Voltage Drop ’ 1- o Low Power Loss, High 2.2 ;.0 os 877]| J 3. 0.8(.031) M À X

230V AC primary to 12V, 1A secondary transformer

Abstract: 230v dc 5a rectifier diode 13003 charger 230V ac to 5V dc usb charger circuit CM 2N65
Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs For DOE Level 6 Standard Rev 1.5 Jan 2014 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 9,10 Page 11,12 2014 - Jan - 26

13003 charger

Abstract: 230v to 5v circuit using 13003 transistor 121k 1kv capacitor
Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs For DOE Level 6 Standard Rev 1.4 Jun 2013 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 9,10 Page 11,12 2013 - Jun - 26

FDB12N50U

Contextual Info: TM Ultra FRFET FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

smps with uc3842 and tl431

Abstract: mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a mc34063 step up 5a MOSFET 1000v 30a uc3842 step down mc34063 triple output
Contextual Info: POWER SUPPLY EQUIPMENT STMicroelectronics SOLUTIONS Power Converter Block Diagram Mains Mains Rectification Conditioning Mains Rectification / Inrush Current Limitation Mains Conditioning Primary Secondary Primary Secondary RECOMMENDED DEVICES MAIN FEATURES

Contextual Info: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FDPF*12n50ut

Abstract: FDPF12N50UT FDP12N50U FDP12N50
Contextual Info: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

10C2

Abstract: ULTRA FAST diode 400v 5a vrrm 400v if 20A ultra fast recovery diode 5GUZ47 markT2
Contextual Info: TOSHIBA 5GUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE 5GUZ47 Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 43.2 ± 0.2 10.3MAX. • Repetitive Peak Reverse Voltage V = 400V • Average Output Rectified Current I0 = 5A

FDPF*12n50ut

Abstract: FDPF12N50UT
Contextual Info: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

UF506

Abstract: UF505 Ultra Fast Rectifiers ULTRA FAST diode 400v 5a freewheeling diode 50A
Contextual Info: UF505 thru UF506 SURFACE MOUNT REVERSE VOLTAGE 500 TO 6 600 VOL TS ULTRA FAST RECTIFIERS FORWARD CURRENT - 5.0 AMPERES TO-220AC FEATURES MECHANICAL DATA Case: JEDEC TO-220AC, molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026

ULTRA FAST diode 400v 5a

Abstract: inverterdriven igbt 100V 5A IGBT Driver 10a 400V ultra fast diode d2pak
Contextual Info: FGB5N60UNDF tm 600V, 5A Short Circuit Rated IGBT Applications • Home appliance inverter-driven appplication - Fan Motor Driver, Circulation Pump, Refrigerator, Dish Washer Features • Short circuit rated 10us • High current capability General Description

12v dc full wave bridge rectifier

Abstract: Schottky Diode 40V 5A bridge SCR 12V battery charging Schottky Diode 40V 5A dual Schottky Diode 40V 5A Schottky Bridge 20V 2A bridge rectifier 100A 100V Dual N-Channel MOSFET dip package DIODE RECTIFIER BRIDGE SINGLE 200A P-Channel mosfet 400v
Contextual Info: Dual, Schottky Diodes CMRD6263DO 70V, 15mA Dual, Schottky Diodes Features: Benefits: Applications: SOT-963 Actual Size in mm 1.05 x 1.05 x 0.5 • Dual, isolated, 70V, 15mA Schottky diodes • Low reverse current 98nA @ 50V • High total energy efficiency

Contextual Info: FDB12N50U N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 10 A, 800 m Features Description • RDS on = 650 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

SML05SC06D3B

Abstract: LE17 MIL-PRF19500 QR217 ULTRA FAST diode 400v 5a
Contextual Info: ULTRA FAST RECOVERY POWER RECTIFIER SML05SC06D3A / SML05SC06D3B • VR max = 600V • IF(avg) = 5A • VF(typ) = 1.5V • DLCC3 Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B”/ “E-MELF” Package † No Reverse Recovery

FDPF*12n50ut

Abstract: FDPF12N50UT ULTRA FAST diode 400v 5a
Contextual Info: FDPF12N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 10 A, 800 m Features Description • RDS on = 650 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

Contextual Info: FDD5N50U N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 3 A, 2.0  Features Description • RDS on = 1.65  (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

Contextual Info: FGP5N60UFD tm 600V, 5A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.9V @ IC = 5A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new series

IGBT 600V 5A cost

Abstract: 5A IGBT igbt 100V 5A igbt for induction heating ic 600v 10A ultra fast recovery diode to220 FGP5N60UFD
Contextual Info: FGP5N60UFD tm 600V, 5A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS, and PFC applications where low conduction and switching losses are essential.

Contextual Info: UniFETTM FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

Latest Products Q3-10

Abstract: FULL WAVE mosfet RECTIFIER CIRCUITS 12v dc full wave bridge rectifier FULL WAVE RECTIFIER CIRCUITS with scr SCR 12V battery charging bridge rectifier 100A 100V battery charging with scr and circuit SCR full wave bridge rectifier Schottky Diode 40V 5A CMLDM7003
Contextual Info: Dual, Schottky Diodes CMRSH-4DO 40V, 200mA Dual, Schottky Diodes Features: Benefits: Applications: • Dual, isolated, 40V, 200mA • Low reverse current Schottky diodes 25nA @ 30V • High current rating in an extremely small SOT-963 package • DC/DC conversion