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    ULTRA LOW NOISE N-CHANNEL JFET Search Results

    ULTRA LOW NOISE N-CHANNEL JFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    ULTRA LOW NOISE N-CHANNEL JFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    replacement 2sk170

    Abstract: 2sk170 ultra low idss LSK170 Toshiba 2SK170 2SK170 to92 low noise low frequency JFET frequency guitar IF4500 audio mixer
    Text: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET Linear Systems replaces discontinued Toshiba 2SK170 with LSK170 The 2SK170 / LSK170 is an Ultra Low Noise Single N-Channel JFET Optimized to provide low noise at both high and low frequency with a narrow range of IDSS and low capacitance. The 2SK170 /


    Original     		PDF LSK170 2SK170 LSK170 replacement 2sk170 ultra low idss Toshiba 2SK170 2SK170 to92 low noise low frequency JFET frequency guitar IF4500 audio mixer

    ULTRA LOW NOISE N-CHANNEL JFET

    Abstract: Zener Diode 3v 400mW jfet n channel ultra low noise jfet transistor 2n4391 ultra low igss pA LS843 spice ultra low noise NPN transistor J210 spice Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET"
    Text: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE en= 3nV/√Hz TYP. LOW LEAKAGE IG = 15pA TYPs. LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW OFFSET VOLTAGE ABSOLUTE MAXIMUM RATINGS NOTE 1


    Original     		PDF LS843 LS844 LS845 ULTRA LOW NOISE N-CHANNEL JFET Zener Diode 3v 400mW jfet n channel ultra low noise jfet transistor 2n4391 ultra low igss pA LS843 spice ultra low noise NPN transistor J210 spice Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET"

    ultra low igss pA

    Abstract: LS845 LS843 LS844 MONOLITHIC DUAL N-CHANNEL JFET SSG11
    Text: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE en= 3nV/√Hz TYP. LOW LEAKAGE IG = 15pA TYPs. LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW OFFSET VOLTAGE ABSOLUTE MAXIMUM RATINGS NOTE 1


    Original     		PDF LS843 LS844 LS845 ultra low igss pA LS845 MONOLITHIC DUAL N-CHANNEL JFET SSG11

    ultra low igss pA

    Abstract: No abstract text available
    Text: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW DRIFT │ΔVGS1-2/ΔT│= 5µV/ºC max. ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max. ABSOLUTE MAXIMUM RATINGS NOTE 1


    Original     		PDF LS830 LS831 LS832 LS833 70nV/â 25-year-old, ultra low igss pA

    LS845

    Abstract: No abstract text available
    Text: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en=3nV/Hz TYP. LOW LEAKAGE IG=15pA TYPs. LOW DRIFT I VGS1-2/TI=5µV/ºC max. ULTRA LOW OFFSET VOLTAGE IVGS1-2I=1mV max. ABSOLUTE MAXIMUM RATINGS SOIC-A TO-71


    Original     		PDF LS843 LS844 LS845 OT-23 400mW 25-year-old, LS845

    Untitled

    Abstract: No abstract text available
    Text: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en=3nV/Hz TYP. LOW LEAKAGE IG=15pA TYPs. LOW DRIFT I VGS1-2/TI=5µV/ºC max. ULTRA LOW OFFSET VOLTAGE IVGS1-2I=1mV max. ABSOLUTE MAXIMUM RATINGS SOIC-A TO-71


    Original     		PDF LS843 LS844 LS845 OT-23 400mW 25-year-old,

    Untitled

    Abstract: No abstract text available
    Text: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES VGS1-2/ T = 5µV/ºC max. ULTRA LOW DRIFT ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


    Original     		PDF LS830 LS831 LS832 LS833 70nV/â 25-year-old,

    "DUAL N-Channel JFET"

    Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
    Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71


    Original     		PDF LSK389 400mW 2SK389 "DUAL N-Channel JFET" Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A

    2SK389

    Abstract: lsk170 LSK389B 2SK389 equivalent LSK389 equivalent dss2 LSK389 LSK389C LSK389A
    Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71


    Original     		PDF LSK389 2SK389 2SK389 lsk170 LSK389B 2SK389 equivalent LSK389 equivalent dss2 LSK389 LSK389C LSK389A

    2sk170 spice

    Abstract: j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6
    Text: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE f = 1kHz en = 0.9nV/√Hz HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = -500pA max LOW CAPACITANCE IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170


    Original     		PDF LSK170 LSK389 400mW -500pA 2SK170 OT-23 2sk170 spice j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6

    lsk389

    Abstract: lsk170a LSK170C
    Text: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET FEATURES ULTRA LOW NOISE f=1kHz en = 0.9NV/√HZ HIGH BREAKDOWN VOLTAGE BVGSS=40V max HIGH GAIN Yfs=22mS (typ) HIGH INPUT IMPEDENCE IG= -500pA max LOW CAPACITANCE 22pF max IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170


    Original     		PDF LSK170 -500pA 2SK170 400mW LSK389 25-year-old, lsk170a LSK170C

    UNION CARBIDE

    Abstract: No abstract text available
    Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER FEATURES ULTRA LOW NOISE en = 0.9nV/√Hz typ TIGHT MATCHING IVGS1-2I = 20mV max HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Gfs = 20mS (typ) LOW CAPACITANCE 25pF typ IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389


    Original     		PDF LSK389 2SK389 400mW 25-year-old, UNION CARBIDE

    lsk170

    Abstract: No abstract text available
    Text: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET FEATURES ULTRA LOW NOISE f=1kHz en = 0.9NV/√HZ HIGH BREAKDOWN VOLTAGE BVGSS=40V max HIGH GAIN Yfs=22mS (typ) HIGH INPUT IMPEDENCE IG= -500pA max LOW CAPACITANCE 22pF max IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170


    Original     		PDF LSK170 -500pA 2SK170 400mW LSK389 25-year-old, lsk170

    LSK170A

    Abstract: LSK170 LSK170C LSK170B replacement 2sk170 2SK170 2SK170 to92 LSK389 equivalent n-channel JFET sot23 jfet n channel ultra low noise
    Text: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE f = 1kHz en = 0.9nV/√Hz HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = -500pA max LOW CAPACITANCE IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170


    Original     		PDF LSK170 -500pA OT-23 2SK170 400mW LSK170A LSK170 LSK170C LSK170B replacement 2sk170 2SK170 2SK170 to92 LSK389 equivalent n-channel JFET sot23 jfet n channel ultra low noise

    ultra low igss pA

    Abstract: ultra low igss LS831 LS830 LS832 LS833
    Text: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW LEAKAGE IG = 80fA TYP. LOW NOISE en= 70nV/√Hz TYP. LOW CAPACITANCE CISS= 3pf MAX.


    Original     		PDF LS830 LS831 LS832 LS833 70nV/Hz ultra low igss pA ultra low igss LS833

    ultra low igss pA mosfet

    Abstract: jfet transistor 2n4391 "DUAL N-Channel JFET" ultra low Ciss jfet sstpad100 "spice" 2n4416 transistor spice jfet n channel ultra low noise 2N44 Ultra High Input Impedance N-Channel JFET Amplifier 2n3955 transistor spice
    Text: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW LEAKAGE IG = 80fA TYP. LOW NOISE en= 70nV/√Hz TYP. LOW CAPACITANCE CISS= 3pf MAX.


    Original     		PDF LS830 LS831 LS832 LS833 70nV/Hz ultra low igss pA mosfet jfet transistor 2n4391 "DUAL N-Channel JFET" ultra low Ciss jfet sstpad100 "spice" 2n4416 transistor spice jfet n channel ultra low noise 2N44 Ultra High Input Impedance N-Channel JFET Amplifier 2n3955 transistor spice

    LSK489

    Abstract: LSK186 lsk 489 amelco
    Text: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.5nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits •       Reduced Noise due to process improvement Monolithic Design High slew rate


    Original     		PDF LSK489 LSK489 LSK186 lsk 489 amelco

    Untitled

    Abstract: No abstract text available
    Text: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits •       Reduced Noise due to process improvement Monolithic Design High slew rate


    Original     		PDF LSK489 25-year-old,

    LSK186

    Abstract: No abstract text available
    Text: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits •       Reduced Noise due to process improvement Monolithic Design High slew rate


    Original     		PDF LSK489 25-year-old, LSK186

    LSK489

    Abstract: No abstract text available
    Text: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits •       Reduced Noise due to process improvement Monolithic Design High slew rate


    Original     		PDF LSK489 25-year-old, LSK489

    amelco

    Abstract: LSK389B
    Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 0.9nV/√Hz typ TIGHT MATCHING IVGS1-2I = 20mV max HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Gfs = 20mS (typ) LOW CAPACITANCE Top View TO-71 25pF typ IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389


    Original     		PDF LSK389 2SK389 400mW 25-year-old, amelco LSK389B

    Untitled

    Abstract: No abstract text available
    Text: LINEAR SYSTEMS LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE e = 3nV/ Hz TYP. LOW LEAKAGE lQ = 15pA TYPs. n LOW DRIFT 1 V g s i -2 / T I = 5 ^ V / ° C m a x - ULTRA LOW OFFSET VOLTAGE


    OCR Scan     		PDF LS843 LS844 LS845

    Untitled

    Abstract: No abstract text available
    Text: LINEAR SYSTEMS LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE e LOW LEAKAGE = 3nV/VHz T Y P . n lG = 15 pA TY P s. LOW DRIFT Ia V g s i -2 m t I= 5 M V /°C m a x . ULTRA LOW OFFSET VOLTAGE


    OCR Scan     		PDF LS843 LS844 LS845

    M0305

    Abstract: a/LS833
    Text: LINEAR SYSTEMS LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW DRIFT 1V gsi- 2 / t , = 5 Mw °c max. ULTRA LOW LEAKAGE IQ = 80fA TYP. LOW NOISE en= 70nV/ Hz TYP. C|ss= 3pf MAX.


    OCR Scan     		PDF LS830 LS831 LS832 LS833 LS833 M0305 a/LS833