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Microchip Technology Inc UM2108B Si PPIN Hermetic Glass Axial, Projected EOL: 2044-08-15 - Contact for Pricing
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Microchip Technology Inc	UM2108B			30 Weeks		1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microchip Technology Inc UM2108E Si PPIN Hermetic Glass Axial, Projected EOL: 2044-08-15 - Contact for Pricing
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Microchip Technology Inc	UM2108E			30 Weeks		1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microchip Technology Inc UM2108D Si PPIN Hermetic Stud, Projected EOL: 2044-08-15 - Contact for Pricing
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Microchip Technology Inc	UM2108D			30 Weeks		1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microchip Technology Inc UM2108C Si PPIN Hermetic Stud, Projected EOL: 2044-08-15 - Contact for Pricing
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Microchip Technology Inc	UM2108C			30 Weeks		1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microchip Technology Inc UM2108A Si PPIN Hermetic Seal, Projected EOL: 2044-08-15 - Contact for Pricing
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Microchip Technology Inc	UM2108A			30 Weeks		1 - 10 - 100 - 1000 - 10000 -	Get Quote

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UM2108 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
UM2108		Microsemi	Pin Diode		Scan	PDF	109.78KB	3
UM2108		Microsemi	PIN Diode		Scan	PDF	109.78KB	3

UM2108 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
UM2100 Abstract: um211 HP436A UM2101 UM2102 UM2104 UM2106 UM2108 UM2110 Contextual Info: UM2100 SERIES PIN DIODE FEATURES DESCRIPTION • HF band 2-30 MHz PIN • Long Lifetim e (25ns typ.) • High Power (1KW, CW) • High Isolation (32dB) U M 2100 Series PIN diodes are designed for transmit/receive switch and attenuator applications in HF band (2-30M H z) and below. As series configured	OCR Scan	UM2100 2-30MH7) 60dBm) -4-4-X44-M. um211 HP436A UM2101 UM2102 UM2104 UM2106 UM2108 UM2110	PDF
Contextual Info: UM2100 TM ATTENUATOR AND POWER PIN DIODES 2 – 30 MHz RoHS Compliant Versions Available K EY FEAT U RES DESCRIPT ION IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com ABSOLU T E M AX I M U M RAT I N GS AT 2 5 º C U N LESS OT H ERWI SE SPECI FI ED	Original	UM2100 60dBm) UMX2101B,	PDF
UM2110 Abstract: 1KW, 2-30MHz UM2100 UM2101 UM2102 UM2104 UM2106 UM2108 Contextual Info: UM2100 ATTENUATOR AND POWER PIN DIODES 2-30 MHz KEY FEATURES DESCRIPTION 60 dBm at 300 kHz with 1 watt per tone. The forward biased resistance/reactance vs. frequency characteristics are flat down to 10 kHz. The capacitance vs. reverse bias voltage characteristic	Original	UM2100 UM2100 2-30MHz) UM2110 1KW, 2-30MHz UM2101 UM2102 UM2104 UM2106 UM2108	PDF
UM2102 Abstract: UM2100 UM2101 UM2104 UM2106 UM2108 UM2110 Contextual Info: UM2100 TM ATTENUATOR AND POWER PIN DIODES 2 – 30 MHz RoHS Compliant Versions Available KEY FEATURES UM2100 Series PIN diodes are designed for transmit/receive switch and attenuator applications in HF band 2-30MHz and below. As series configured switches, these long lifetime (25 s typical) diodes	Original	UM2100 UM2100 2-30MHz) UM2102 UM2101 UM2104 UM2106 UM2108 UM2110	PDF
Contextual Info: PIN DIODE UM2100 SERIES FEATURES DESCRIPTION • HF band 2-30 MHz PIN • Long Lifetim e (25ns typ.) • High Power (1KW, CW) • High Isolation (32dB) U M 2100 Series PIN diodes are designed for transmit/receive switch and attenuator applications in HF band (2-30M H z) and below. As series configured	OCR Scan	UM2100 2-30M re1235	PDF
KV38S2 Abstract: KV3201 gc4700 UM7108 UM6606 GC4430 GC1210 GC4213 gc4213 transistor GC4731 Contextual Info: RF/MICROWAVE discretes & modules Microsemi R TM more than solutions - enabling possibilities Solutions l l l l l l l l Microwave Links Base stations Military/avionics Medical/MRI Radar/phase shifters Space / satellite applications V Sat terminals Land mobile radios	Original		PDF
Contextual Info: PIN DIODE UM2100 SERIES FEATURES • DESCRIPTION H F band 2 -3 0 M H z P IN U M 2 1 0 0 Series P IN diodes are designed for transm it/receive switch and attenuator applications in H F band (2 -3 0 M H z ) and below. As series configured • Long Lifetime (25ns typ.)	OCR Scan	UM2100 444-M	PDF