UN212X Search Results

UN2121

Abstract: UN2122 UN2123 UN2124 UNR2121 UNR2122 UNR2123 UNR2124 UNR212X UNR212Y
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR212x Series (UN212x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ ue pl d in an c se ed lud

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR212x Series (UN212x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95)

UN2121

Abstract: UN2122 UN2123 UN2124 UNR2121 UNR2122 UNR2123 UNR2124 UNR212X UNR212Y
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR212x Series (UN212x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou

UN2121

Abstract: UN2122 UN2123 UN2124 UN212X UNR2121 UNR2122 UNR2123 UNR2124 UNR212X
Contextual Info: Transistors with built-in Resistor UNR212x Series UN212x Series Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

UN2121

Abstract: UN2122 UN2123 UN2124 UNR2121 UNR2122 UNR2123 UNR2124 UNR212X UNR212Y
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR212x Series (UN212x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and

UN2121

Abstract: UN2122 UN2123 UN2124 UNR2121 UNR2122 UNR2123 UNR2124 UNR212X UNR212Y
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR212x Series (UN212x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

Contextual Info: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

UNR2223

Abstract: UN212X UN2223 UNR212X XN04390
Contextual Info: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) For digital circuit For switching Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 0.4±0.2

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

SC59A

Abstract: SC-59A RT1N441C RT1P441M RT1N434S RT1P441C RT1P441S UN111E UN111H UN112X
Contextual Info: - 336 - Ta=25t , *Ef][iTc=25‘ C) m z tt ICvDC) « (V) RT1P434S RT1P441C =m =M RT1P441M HS RTÌP441S H S UN111D UN211H ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ st ♦ST ♦ST ♦ST ♦ST ♦ST UN 2 i1L ft; UN211M UN111E U N I I IF

UN7000

Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
Contextual Info: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

equivalent transistor n 4212

Abstract: N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent
Contextual Info: Series N am e Pakage No. R esistance value Rbe Rb ik O ) <kQ) UN1000 Series UN2000 Series U N 2000T Series UN4000 Series UN5Û00 Series UN6000 Series UN7000 Series UN8000 Series U N9000 Series M T 2 T y p e (D 3 8 ) SS Mini Type (D1) (P c = 1 W ) (P c = 1 2 5 m W )

UN212X

Abstract: UN2223 UNR212X UNR2223 XN04390
Contextual Info: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Features 3 2 1 (0.65) • Two elements incorporated into one package. (Transistor with built-in resistor)

D8050

Contextual Info: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 3 2 1 (0.65) • Two elements incorporated into one package. (Transistor with built-in resistor)

UN2121

Abstract: UN2122 UN2123 UNR2121 UNR2122 UNR2123 UNR2124 UNR212X UNR212Y
Contextual Info: Transistors with built-in Resistor UNR2121/2122/2123/2124/212X/212Y UN2121/2122/2123/2124/212X/212Y Silicon PNP epitaxial planer transistor Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and