UNI JUNCTION TRANSISTOR Search Results

TN41

Abstract: TN41A
Contextual Info: TOSHIBA TN41AJN41B TOSHIBA PROGAMMABLE UNI JUNCTION TRANSISTOR TN41A SILICON PLANAR TYPE TNZL1R THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, PULSER AND TIMER Unit in mm APPLICATIONS ¿5.1 M AX. • Low Leakage Current : lG A O ~ l^ n^- Max. I(^Kg = 100nA (Max.)

TN41A

Abstract: TN-41A
Contextual Info: TN41 A,TN41 B TO SHIBA TOSHIBA PRO GA M M ABLE UNI JUNCTION TRANSISTOR SILICON PLANAR TYPE TN41A, TN41B THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, PULSER AND TIM ER U nit in mm APPLICATIONS {¡5.1 M A X • Low Leakage Current : lQAO = 10nA Max. IGKS = lOOnA (Max.)

TN41A

Abstract: ujt timer CIRCUIT transistor tn41a ujt timer PROGRAMMABLE UJT TN-41A TN41 TN41B uni junction transistor
Contextual Info: TN41A,TN41B TOSHIBA TOSHIBA PROGAMMABLE UNI JUNCTION TRANSISTOR SILICON PLANAR TYPE T N 4 1 A , T N 4 1 B THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, PULSER AND TIMER APPLICATIONS • Low Leakage Current : IQAO“ 10nA Max. lG K S~ 1 0 0 n A (Max.) • High Pulse Output Voltage : V q = 10V (Typ.)

3SK28

Abstract: 38K28 10ID 251C ta1028 transistor BC 307 3SK 49
Contextual Info: 3SK 28 s /U D y N Z - v f tM S t& B m n m m h jy s J z ? ^ IL IC O N N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR I f l x t i INDUSTRIAL APPLICATIONS o Uni t in mm xf+mmmmm 0 5 8 MAX. o Video Pre —Amplifier Applications o VHP Band Amplifier Applications f i s 3 'S * t fi y *

3SK62

Abstract: transistor KL Transistor VN 40
Contextual Info: 3SK * SILICON N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR O < •*£« o Im pedance C o n v erto r Uni t i n y y * -f 3 i» Ä 3 'J' £ ilffl S 4 « ffi L -r w -Í - t o B A 1}4 y n — f y x - c - t • 2 m = 3 0 0 —2000 u n lAttiU-t y e - f y * r - t :

bf246c

Abstract: BF247A
Contextual Info: DISC RETE SE M IC O N D U C TO R S InlEET BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors

Contextual Info: Philips Semi c on du ct or s Pr od uc t specification P o w e r M O S transistor G E N E R A L DE SCRIPTION BUK462-1 00A QUICK RE FE R E N C E DATA N-channel enhancement mode field-effed power transistor in a plastic envelope suitable for surface mount applications.

Unitrode transistors data To5

Abstract: UC195 on 614 TO3 power transistor UC395 transistor 257 transistor 257 isolated unitrode
Contextual Info: UNITRODE CORP/UNITRODE IN T E G R A T E D y IC “ F Smart Power Transistor UNITRODE FEATURES • Greater Than 1.0A Output • 3-OjuA Typical Base Current • 500ns Switching Time • 2.0V Saturation • Directly Interfaces with CMOS or TTL • Internal Thermal Limiting

003A

Abstract: ET393R Transistor E
Contextual Info: SPECIFICATION DEV ICE NAME : BIPOLAR TRANSISTOR TYPE NAME :_ E T 3 9 3 R SPEC. No. DATE Fuji E l e c t r i c Co., Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Cc^LtcL DRAWN ! CHECKED T Y 0257—R—004a

003A

Abstract: t393 ET393R
Contextual Info: SPECIFICATION DEVICE NAME : TYPE NAME : BIPOLAR TRANSISTOR ET 3 9 3 R SPEC. No. DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Cc^LtcL DWG.NO. DRAWN ! CHECKED T % Y 0257-R-004a Ratings

Contextual Info: WILLAS General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ THRU MMBT3906TT1 FM1200-M+ Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

003A

Abstract: t393 ET393R
Contextual Info: SPECIFICATION DEVICE NAME : TYPE NAME : BIPOLAR TRANSISTOR ET 3 9 3 R SPEC. No. DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Cc^LtcL DWG.NO. DRAWN ! CHECKED T % Y 0257-R-004a Ratings

Contextual Info: SIEMENS BCR 119 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R-|=4.7ki2 IO ­ nr T I Pin Configuration BCR 119 WKs 1= B Q62702-C2255 Package o II CO Marking Ordering Code LU II

T8L10

Abstract: 2SD1024
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1024 Case : TO-220 T8L10 Unit : mm 8A NPN RATINGS ●Absolute Maxi mum Rati ngs Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Logic level FET F E A TU R ES PHP21 N06LT, PHB21 N 0 6 L T SY M B O L • ’ T re n c h ’ technology • Very low on-state resistance • Fast sw itching

Contextual Info: 1989963 C E N T R A L S E M I C O N D U C T O R •=12 à- DE ■ n û ' n b B 92D 00386 aOOOBflt. T -J* 3-/3. 33-J3 4 TIP35, A, B, C TIP36, A, B, C ' ' NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS central Sem iconductor Corp. T0-3P CASE 145 Adams Avenue

1B16A

Abstract: B216A MJE13008 MJE13009 MJE-13008
Contextual Info: DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13008, MJE13009 types are Silicon NPN Transistors designed for high voltage, high speed switching appl ications. MAXIMUM RATINGS Tr=25°C Col 1ector- Emitter Voltage (VBE= 1 .5V) Co l1ector- Emi tter Voltage Emitter Base Voltage

SOT890-1

Contextual Info: WILLAS FM120-M+ THRU 2SA1201 FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse

2N6229

Abstract: 2N5633 2N5634 2N6230 2N6231 2N5632
Contextual Info: 2N5632 2N6229 Central 2N5633 2N6230 2N5634 2N6231 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS Semiconductor Corp. Central Semiconductor Corp. JEDEC TO-3 CASE 1 4 5 Adam s Avenue Hauppauge, New York 1 1 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5632, 2N6229 series types are complementary silicon power

buk555-60a

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK555-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

2N5192

Abstract: 2N5191 2N5195
Contextual Info: 2N5191 2N5192  MEDIUM POWER NPN SILICON TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N5191 and 2N5192 are silicon epitaxial-base NPN transistors in Jedec SOT-32

MMDT4403

Abstract: transistor c 2026 TRANSISTOR m3a
Contextual Info: MMDT4403 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 200 mWatts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE = -40V • Collector current I C = -600mA • In compliance with EU RoHS 2002/95/EC directives

U2775B-B

Abstract: U269B-B u269b u4614b-a U6811B-B U2555 u4614 U2390B-F u2775b U2550B1-A
Contextual Info: TELEFUNKEN Semiconductors Quality and Reliability Data TELEFUNKEN Semiconductors Issue: 11.95 TQ02 TQ02 TELEFUNKEN Semiconductors Table of Contents 1. Quality and Reliability Targets . 1

Contextual Info: *57 T YPE irfs IRF N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V dss RDS on Id IRF840 IRF840FI 500 V 500 V < 0.85 £2 < 0.85 a 8 A 4.5 A IRF841 IRF841FI 450 V 450 V < 0.85 ß < 0.85 ß 8 A 4.5 A • . ■ ■ 40 /fi 841/Fl SGS-THOMSON iLiOM)iQ(£I