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Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2003 Power MOSFET 9A, 25V P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UP2003 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM	Original	UP2003 UP2003 UP2003L-TN3-R UP2003G-TN3-R O-252 QW-R502-202	PDF
UP2003 Abstract: SWITCH MODE CURRENT SOURCE Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2003 Power MOSFET P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UP2003 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM	Original	UP2003 UP2003 UP2003L UP2003-TN3-R UP2003L-TN3-R UP2003-TN3-T UP2003L-TN3-T O-252 QW-R502-202 SWITCH MODE CURRENT SOURCE	PDF
UP2003 Abstract: JA125 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2003 Power MOSFET 9A, 25V P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UP2003 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM	Original	UP2003 UP2003 UP2003L-TN3-R UP2003G-TN3-R UP2003L-TN3-T UP2003G-TN3-T O-252 QW-R502-202 JA125	PDF
Contextual Info: UNISONICTECHNOLOGIESCO., LTD UP2003 Power MOSFET 9 A, 2 5 V P-CH AN N EL LOGI C LEV EL EN H AN CEM EN T M ODE FI ELD EFFECT T RAN SI ST OR ̈ DESCRI PT I ON The UP2003 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate	Original	UP2003 UP2003 UP2003L-TN3-R UP2003G-TN3-R UP2003L-TN3-T UP2003G-TN3-T QW-R502-202	PDF