UPA81 Search Results
UPA81 Price and Stock
Rochester Electronics LLC UPA811T-T1-ARF TRANS 2 NPN 10V 8GHZ SOT-363 |
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UPA811T-T1-A | Bulk | 18,000 | 533 |
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California Eastern Laboratories (CEL) UPA812T-ARF TRANS 2 NPN 10V 7GHZ SOT-363 |
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UPA812T-A | Bulk |
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California Eastern Laboratories (CEL) UPA810T-ARF TRANS 2 NPN 12V 4.5GHZ SOT363 |
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UPA810T-A | Bulk |
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California Eastern Laboratories (CEL) UPA814T-T1RF TRANS 2 NPN 6V 9GHZ 6-SO |
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UPA814T-T1 | Reel | 3,000 |
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California Eastern Laboratories (CEL) UPA810T-T1RF TRANS 2 NPN 12V 4.5GHZ 6-SO |
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UPA810T-T1 | Reel |
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UPA81 Datasheets (79)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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uPA81 |
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Semiconductor Selection Guide 1995 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
uPA81 |
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Semiconductor Selection Guide | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UPA81 |
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Silicon Darlington transistor array | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UPA810 |
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NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
uPA810 |
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Semiconductor Selection Guide | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UPA810T |
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Npn Silicon High Frequency Transistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UPA810T |
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Consumer-use Ultra-high Frequency Bipolar Transistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UPA810T |
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NPN silicon high frequency transistor. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
uPA810T |
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HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 x 2SC4226 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UPA810T-A |
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RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 4.5GHZ SOT363 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UPA810T-A |
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NPN SILICON HIGH FREQUENCY TRANSISTOR | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UPA810TC |
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NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
uPA810TC |
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NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 x 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER M | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UPA810TC-T1 |
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NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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UPA810TF |
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NPN SILICON HIGH FREQUENCY TRANSISTOR | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UPA810TF |
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Consumer-use Ultra-high Frequency Bipolar Transistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
uPA810TFB-T1 |
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High-Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 6-Pin 2 x 2SC4226) Small Mini Mold | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
uPA810TGB |
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High-Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 6-Pin 2 x 2SC4226) Small Mini Mold | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UPA810T-T1 |
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RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN HF FT=4.5GHZ SOT-363 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UPA810T-T1 |
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NPN SILICON HIGH FREQUENCY TRANSISTOR | Original |
UPA81 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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NE688
Abstract: S21E UPA814T UPA814T-T1
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Original |
UPA814T NE688 UPA814T IS21eI2 IS21EI UPA814T-T1 24-Hour S21E UPA814T-T1 | |
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA814TC FEATURES DESCRIPTION • SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 high • FLAT LEAD STYLE: Reduced lead inductance improves electrical |
Original |
OT-363 UPA814TC UPA814TC NE688 50GHz UPA814TC-T1, 24-Hour | |
613 GB 123 CTContextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S |
OCR Scan |
uPA812T 2SC4227) /xPA812T 613 GB 123 CT | |
nec d 588
Abstract: NEC 2532 NEC 2504
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OCR Scan |
uPA811T 2SC4228) /xPA811T nec d 588 NEC 2532 NEC 2504 | |
Contextual Info: SILICON TRANSISTOR UPA812T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz |
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UPA812T NE681 UPA812T UPA812T-T1-A 24-Hour | |
Contextual Info: SILICON TRANSISTOR UPA811T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • • • • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz |
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NE680 UPA811T UPA811T UPA811T-T1-A 24-Hour | |
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • UPA811T PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz |
OCR Scan |
NE680 UPA811T UPA811T UPA811T-T1 | |
8003* transistor
Abstract: UPA814T UPA814T-T1 NE688 S21E transistor C 110 transistor f 20 nf
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UPA814T NE688 UPA814T UPA814T-T1, 24-Hour 8003* transistor UPA814T-T1 S21E transistor C 110 transistor f 20 nf | |
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA810TC FEATURES DESCRIPTION • SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high • FLAT LEAD STYLE: Reduced lead inductance improves electrical |
Original |
OT-363 UPA810TC UPA810TC NE856 UPA810TC-T1, 24-Hour | |
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 2 . 1 + 0.1 LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz - |
OCR Scan |
NE688 UPA814T UPA814T UPA814T-T1, 24-Hour | |
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA812T OUTLINE DIMENSIONS Units in mm FEATURES SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |
OCR Scan |
NE681 UPA812T UPA812T UPA812T-T1, 24-Hour | |
NEC 2501 re 443
Abstract: LS 1691 BM je 371 Transistor
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OCR Scan |
uPA813T 2SC4570) /xPA813T jiPA813T-T1 NEC 2501 re 443 LS 1691 BM je 371 Transistor | |
NE856
Abstract: S21E UPA810TC UPA810TC-T1
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Original |
UPA810TC OT-363 UPA810TC NE856 UPA810TC-T1, 24-Hour S21E UPA810TC-T1 | |
UPA814TC
Abstract: UPA814TC-T1 NE688 S21E
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UPA814TC OT-363 UPA814TC NE688 UPA814TC-T1, 24-Hour UPA814TC-T1 S21E | |
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NE688
Abstract: S21E UPA814T UPA814T-T1 UPA814T-T1-A
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Original |
UPA814T NE688 UPA814T S21E UPA814T-T1 UPA814T-T1-A | |
OF transistor 13
Abstract: ultra low noise NPN transistor
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UPA810T NE856 UPA810T UPA810T-T1 UPA810T-A UPA810T-T1-A OF transistor 13 ultra low noise NPN transistor | |
low power rf transistor TContextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA811T OUTLINE DIMENSIONS Units in mm FEATURES SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View LOW NOISE FIGURE: IMF = 1 .9 dB TYP at 2 GHz 2 .1 1 0 . 1 HIGH GAIN: - 1 . 2 5 ± 0.1- |
OCR Scan |
NE680 UPA811T UPA811T UPA811T-T1 24-Hour low power rf transistor T | |
TI 9023 IC data
Abstract: 2SC4226 APPLICATION NOTES
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OCR Scan |
uPA810T 2SC4226) /xPA81 TI 9023 IC data 2SC4226 APPLICATION NOTES | |
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5193 SMALL MINI MOLD PACKAGE DRAWINGS FEATURES • • Low Voltage O peration, Low Phase Distortion (U n it: m m ) Low Noise |
OCR Scan |
uPA814T 2SC5193) | |
UPA810T-T1-A
Abstract: NE856 S21E UPA810T UPA810T-A UPA810T-T1 ultra low noise NPN transistor
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Original |
UPA810T NE856 UPA810T UPA810T-T1-A S21E UPA810T-A UPA810T-T1 ultra low noise NPN transistor | |
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA |
Original |
UPA814T NE688 UPA814T IS21eI2 IS21EI UPA814T-T1 24-Hour | |
ultra low noise NPN transistor
Abstract: NE680 npn dual emitter RF Transistor ultra low noise transistor S21E UPA811T UPA811T-T1
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Original |
UPA811T NE680 UPA811T UPA811T-T1, 24-Hour ultra low noise NPN transistor npn dual emitter RF Transistor ultra low noise transistor S21E UPA811T-T1 | |
NE680
Abstract: S21E UPA811T UPA811T-T1
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Original |
UPA811T NE680 UPA811T UPA811T-T1 24-Hour S21E UPA811T-T1 | |
NE680
Abstract: S21E UPA811T UPA811T-T1 UPA811T-T1-A
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Original |
UPA811T NE680 UPA811T S21E UPA811T-T1 UPA811T-T1-A |