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    UPC8112T Price and Stock

    California Eastern Laboratories (CEL) UPC8112TB-A

    IC MIXER 800MHZ-2GHZ DWN 6SMD
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    California Eastern Laboratories (CEL) UPC8112TB-E3-A

    IC MIXER 800MHZ-2GHZ DWN 6SMD
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    Rochester Electronics LLC UPC8112TB-E3-A

    RF AND BASEBAND CIRCUIT, BIPOLAR
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    DigiKey UPC8112TB-E3-A Bulk 541
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    California Eastern Laboratories (CEL) UPC8112T

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    Bristol Electronics UPC8112T 2
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    Quest Components UPC8112T 1
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    Renesas Electronics Corporation UPC8112TB-E3-A

    RF and Baseband Circuit, Bipolar, PDSO6 '
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    Rochester Electronics UPC8112TB-E3-A 273,000 1
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    UPC8112T Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPC8112T NEC SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE Original PDF
    UPC8112TB NEC SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE Original PDF
    UPC8112TB-A California Eastern Laboratories RF Mixers, RF/IF and RFID, IC MIXER 800MHZ-2GHZ DWN 6SMD Original PDF
    UPC8112TB-E3 NEC SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE Original PDF
    UPC8112TB-E3-A California Eastern Laboratories RF Mixers, RF/IF and RFID, IC MIXER 800MHZ-2GHZ DWN 6SMD Original PDF
    UPC8112TB-E3-A California Eastern Laboratories 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER Original PDF
    UPC8112TB-EVAL California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD FOR UPC8112TB Original PDF
    UPC8112T-E3 NEC 3 V silicon MMIC L-band frequency down converter. Original PDF

    UPC8112T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2 LOIF

    Abstract: UPC8112T UPC8112T-E3
    Text: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER UPC8112T INTERNAL BLOCK DIAGRAM FEATURES • BROADBAND OPERATION: RF Input: 800 - 2000 MHz IF Output: 100 - 300 MHz IF Output RF Input • INPUT IP3: -7 dBm • LOW VOLTAGE OPERATION: 2.7~3.3 V • LOW CURRENT CONSUMPTION: 8.5 mA


    Original     		PDF UPC8112T UPC8112T UPC8112T-E3 24-Hour 2 LOIF UPC8112T-E3

    sot26 sot363 transistor

    Abstract: transistor to6 UPG152TA SSOP20 package 2746 transistor UPG137 UPC8119 NE68730 NE68818 UPC2745
    Text: 900MHz NEW! NE68730 Bipolar Transistor • Low noise figure: 1.2 dB typ at 900MHz • Optimum Noise Match: Close to 50 Ohms • Miniature package: 1.25 x 2.0 mm UPC2745/46TB Buffer Amps UPC8112T Downconverter • 3V operation • 13 dB typ Conversion Gain


    Original     		PDF 900MHz NE68730 UPC2745/46TB UPC8112T 2700MHz 1500MHz OT-363 UPG152TA 30dBm sot26 sot363 transistor transistor to6 UPG152TA SSOP20 package 2746 transistor UPG137 UPC8119 NE68730 NE68818 UPC2745

    UPG137

    Abstract: 2746 transistor NE34018 NE68818 UPC2745 UPC2771T UPC8112T UPG152TA sot26 sot363 transistor
    Text: PCS NEW! NEW! NE34018 HEMT • Low cost plastic package • + 30 dBm Output IP3 • -18 dB Input Return Loss • 0.8 dB Noise Figure • 16 dB Associated Gain UPC8112T Downconverter UPC2745 /46TB Buffer Amps • 3 V operation • 13 dB typ Conversion Gain


    Original     		PDF NE34018 UPC8112T UPC2745 /46TB OT-363 UPG152TA 30dBm OT-26 UPG137 /138GV 2746 transistor NE34018 NE68818 UPC2771T UPG152TA sot26 sot363 transistor

    UPC8112T

    Abstract: UPC8112TB UPC8112TB-E3-A
    Text: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER FEATURES UPC8112TB INTERNAL BLOCK DIAGRAM • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 Package IF Output RF Input • BROADBAND OPERATION: RF = 0.8 to 2.0 GHz IF = 100 to 300 MHz • INPUT IP3: -7 dBm


    Original     		PDF UPC8112TB OT-363 UPC8112TB UPC8112T UPC8112TB-E3-A

    UPC8112T

    Abstract: UPC8112T-E3
    Text: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER UPC8112T INTERNAL BLOCK DIAGRAM FEATURES • BROADBAND OPERATION: RF Input: 800 - 2000 MHz IF Output: 100 - 300 MHz IF Output RF Input • INPUT IP3: -7 dBm • LOW VOLTAGE OPERATION: 2.7~3.3 V • LOW CURRENT CONSUMPTION: 8.5 mA


    Original     		PDF UPC8112T UPC8112T UPC8112T-E3 34-6393/FAX UPC8112T-E3

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    J243 336

    Abstract: IM361 PC2758 pc2757tb 58rf j374 PC2758TB J148 314 j122 nec J141
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PC2757, PC2758, PC8112 P11997JJ2V0ANJ12 P11997JJ2V0AN00 PC8112 J243 336 IM361 PC2758 pc2757tb 58rf j374 PC2758TB J148 314 j122 nec J141

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


    Original     		PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


    Original     		PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    j337

    Abstract: power tr unit j122 5 pin J122 transistor transistor j122 PDC800M PC2758TB
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8112TB SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The μPC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The μPC8112TB features


    Original     		PDF PC8112TB PC8112TB PC2757TB PC2758TB j337 power tr unit j122 5 pin J122 transistor transistor j122 PDC800M

    ic isl 887

    Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03
    Text: RF & マイクロ波デバイス システムブロック www.renesas.com 2010.04 目 次 1. はじめに •··········································································································································· 3


    Original     		PDF PA86x PG2158T5K PC3218T5Y NES1823M-45, NES1823M-180, NES1823M-240, NES1823S-45, NES1823S-90 R09CA0001JJ0100 PX10020JJ42V0PF ic isl 887 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC8112T SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The ^¡PC8112T is a silicon monolithic integrated circuit designed as cellular/cordless telephone receiver stage. 1st frequency down-converter for


    OCR Scan     		PDF uPC8112T PC8112T uPC2757T uPC2758T 20ount: C10535E) P10764E

    fl capacitor 1000

    Abstract: t06 93
    Text: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER UPC8112T INTERNAL BLOCK DIAGRAM FEATURES BROADBAND OPERATION: RF Input: 800 - 2000 MHz IF Output: 100 -3 0 0 MHz INPUT IP3: -7 dBm LOW VOLTAGE OPERATION: 2 .7 -3 3 V LOW CURRENT CONSUMPTION: 8.5 mA POWER SAVE FUNCTION


    OCR Scan     		PDF UPC8112T UPC8112T UPC8112T-E3 fl capacitor 1000 t06 93

    UPC2798GR

    Abstract: No abstract text available
    Text: Configuration Drawings Frequency Downconverters UPC1686GV/ 2721GV/2722GV UPC2756T ose ose ose Vcc Coupling (Feedback) (Bypass) (F o u t2 GND R F in -2 UPC2757T/58T UPC8112T R F in - i (Bypass) UPC2768GR UPC2782GR UPC2798GR Configuration Drawings IQ Modulators


    OCR Scan     		PDF UPC1686GV/ 2721GV/2722GV UPC2756T UPC2757T/58T UPC8112T UPC2768GR UPC2782GR UPC2798GR UPC8104GR UPC8105GR UPC2798GR

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT uPC8112TB SILICON MMIC 1st FREQUENCY DOWNCONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The ¿¿PC8112TB is a silicon monolithic integrated circuit designed as 1st frequency downconverter tor


    OCR Scan     		PDF uPC8112TB PC8112TB jPC81 iPC2757TB PC2758TB iPC8112TB

    Untitled

    Abstract: No abstract text available
    Text: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER FEATURES upC8112T INTERNAL BLOCK DIAGRAM BROADBAND OPERATION: RF Input: 800 - 2000 MHz IF Output: 100- 300 MHz INPUT IP3: -7 dBm LOW VOLTAGE OPERATION: 2.7~3.3 V LOW CURRENT CONSUMPTION: 8.5 mA POWER SAVE FUNCTION


    OCR Scan     		PDF upC8112T UPC8112T UPC8112T-E3

    CAPACITOR

    Abstract: No abstract text available
    Text: PRELIM IN A R Y DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT u P C 8 1 1 2 T B SILICON MMIC 1st FREQUENCY DOWNCONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The ^¡PC8112TB is a silicon monolithic integrated circuit designed as 1st frequency downconverter for


    OCR Scan     		PDF PC8112TB uPC2757TB uPC2758TB PC8112TB WS60-00-1 10535E CAPACITOR

    1509-30

    Abstract: UPC8103T UPC8108T
    Text: Frequency Downconverters _ . J U B m e « • CHAU ftMt [ ^> n UPC1685G UPC1606G UPC1686GV UPC1687G UPC2721GR new MHz (MHz) TYP TYP 55-890 55-890 55-890 55-890 900-2000 10-100 10-80 10-80 10-80 50-600 Vcc (V) Icc (mA) Conversion Noise Gain PSAT Figure (dB)


    OCR Scan     		PDF UPC1685G UPC1606G UPC1686GV UPC1687G UPC2721GR UPC2721GV UPC2722GR UPC2722GV UPC2731GS UPC2734GR 1509-30 UPC8103T UPC8108T