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    UPC8119 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    uPC8119 NEC Semiconductor Selection Guide Original PDF
    UPC8119T California Eastern Laboratories Necs Variable Gain Amplifier Original PDF
    UPC8119T NEC VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE Original PDF
    UPC8119T NEC 1.9 GHz AGC AMPLIFIER Original PDF
    UPC8119T-C2M NEC 1.9 GHZ Agc Amplifier Original PDF
    UPC8119T-E3 NEC VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE Original PDF
    uPC8119T-E3 NEC Variable Gain Amplifier Silicon MMIC for Transmitter AGC Of Digital Cellular Telephone Original PDF

    UPC8119 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UPC8119T

    Abstract: UPC8119T-E3
    Text: 1.9 GHz AGC AMPLIFIER FEATURES UPC8119T UPC8119T GAIN vs. AGC VOLTAGE • FREQUENCY RESPONSE: 800 MHz to 1.9 GHz 20 • SUPPLY VOLTAGE RANGE: 2.7~3.3 V 10 • SUPER SMALL SURFACE MOUNT PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE • GAIN CONTROL RANGE UP TO 40 dB


    Original     		PDF UPC8119T UPC8119T UPC8119T-E3

    UPC8119T

    Abstract: UPC8119T-E3 UPC8120T UPC8120T-E3
    Text: 1.9 GHz AGC AMPLIFIER FEATURES UPC8119T UPC8120T UPC8119T GAIN vs. AGC VOLTAGE • FREQUENCY RESPONSE: 800 MHz to 1.9 GHz 20 • SUPPLY VOLTAGE RANGE: 2.7~3.3 V 10 • VAGC: 0.6~2.3 V Gain, dB • SUPER SMALL SURFACE MOUNT PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE


    Original     		PDF UPC8119T UPC8120T UPC8119T UPC8120T 100nH 1000pF 24-Hour UPC8119T-E3 UPC8120T-E3

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    sot26 sot363 transistor

    Abstract: transistor to6 UPG152TA SSOP20 package 2746 transistor UPG137 UPC8119 NE68730 NE68818 UPC2745
    Text: 900MHz NEW! NE68730 Bipolar Transistor • Low noise figure: 1.2 dB typ at 900MHz • Optimum Noise Match: Close to 50 Ohms • Miniature package: 1.25 x 2.0 mm UPC2745/46TB Buffer Amps UPC8112T Downconverter • 3V operation • 13 dB typ Conversion Gain


    Original     		PDF 900MHz NE68730 UPC2745/46TB UPC8112T 2700MHz 1500MHz OT-363 UPG152TA 30dBm sot26 sot363 transistor transistor to6 UPG152TA SSOP20 package 2746 transistor UPG137 UPC8119 NE68730 NE68818 UPC2745

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    UPG137

    Abstract: 2746 transistor NE34018 NE68818 UPC2745 UPC2771T UPC8112T UPG152TA sot26 sot363 transistor
    Text: PCS NEW! NEW! NE34018 HEMT • Low cost plastic package • + 30 dBm Output IP3 • -18 dB Input Return Loss • 0.8 dB Noise Figure • 16 dB Associated Gain UPC8112T Downconverter UPC2745 /46TB Buffer Amps • 3 V operation • 13 dB typ Conversion Gain


    Original     		PDF NE34018 UPC8112T UPC2745 /46TB OT-363 UPG152TA 30dBm OT-26 UPG137 /138GV 2746 transistor NE34018 NE68818 UPC2771T UPG152TA sot26 sot363 transistor

    UPC8119T

    Abstract: UPC8120T UPC8204TK UPC8204TK-E2-A
    Text: NEC's VARIABLE UPC8204TK GAIN AMPLIFIER OUTLINE DIMENSIONS Units in mm FEATURES • OPERATING FREQUENCY: f = 0.8 GHz to 2.5 GHz 1.3±0.05 Top View 1.1±0.1 0.48 0.48 0.96 1.5±0.1 • GAIN CONTROL RANGE: GCR = 40 dB TYP at f = 1.9 GHz GCR = 40 dB TYP at f = 2.4 GHz


    Original     		PDF UPC8204TK UPC8204TK UPC8119T UPC8120T UPC8204TK-E2-A

    Untitled

    Abstract: No abstract text available
    Text: NEC's VARIABLE UPC8204TK GAIN AMPLIFIER OUTLINE DIMENSIONS Units in mm FEATURES • OPERATING FREQUENCY: f = 0.8 GHz to 2.5 GHz 1.3±0.05 Top View 1.1±0.1 0.48 0.48 0.96 1.5±0.1 • GAIN CONTROL RANGE: GCR = 40 dB TYP at f = 1.9 GHz GCR = 40 dB TYP at f = 2.4 GHz


    Original     		PDF UPC8204TK UPC8204TK-E2 UPC8204TK)

    UPC8119T

    Abstract: UPC8120T UPC8204TK UPC8204TK-E2 ghz transmitter receiver
    Text: NEC's VARIABLE UPC8204TK GAIN AMPLIFIER OUTLINE DIMENSIONS Units in mm FEATURES • OPERATING FREQUENCY: f = 0.8 GHz to 2.5 GHz 1.3±0.05 Top View 1.1±0.1 0.48 0.48 0.96 1.5±0.1 • GAIN CONTROL RANGE: GCR = 40 dB TYP at f = 1.9 GHz GCR = 40 dB TYP at f = 2.4 GHz


    Original     		PDF UPC8204TK UPC8204TK UPC8204TK-E2 UPC8204TK) UPC8119T UPC8120T UPC8204TK-E2 ghz transmitter receiver

    MARKING c1y

    Abstract: MARKING C2K marking C2H marking c1h marking C1s marking c1e c2a marking marking C1P UPG152TA C1H MARKING
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. +0.2 2.8 -0.3 T06 +0.2 1.5 -0.1 3 0.95 4 1.9±0.2 2 0.95 5 1 6 2.9±0.2 +0.2 1.1 -0.1 MARKING -0.05 0.3 +0.10 0.13±0.1 0.8 0 to 0.1 PART


    Original     		PDF UPC2708T UPC8106T UPC2747T UPC2709T UPC8108T UPC2748T UPC2710T UPC8109T UPC2749T UPC2711T MARKING c1y MARKING C2K marking C2H marking c1h marking C1s marking c1e c2a marking marking C1P UPG152TA C1H MARKING

    as 15-g

    Abstract: No abstract text available
    Text: 1.9 GHz AGC AMPLIFIER FEATURES_ UPC8120T UPC8119T GAIN vs. AGC VOLTAGE • FREQUENCY RESPONSE: 800 M H z to 1.9 G Hz • SUPPLY VOLTAGE RANGE: 2 .7 -3 .3 V • VAGC: 0 .6 -2 .3 V • SUPER SMALL SURFACE MOUNT PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE


    OCR Scan     		PDF UPC8120T UPC8119T 100nH 1000pF 24-Hour as 15-g

    UPC8119T

    Abstract: No abstract text available
    Text: 1.9 GHz AGC AMPLIFIER FEATURES_ UPC8119T UPC8120T UPC8119T GAIN vs. AGC VOLTAGE • FREQUENCY RESPONSE: 800 M Hz to 1.9 GHz • SUPPLY VOLTAGE RANGE: 2 .7 -3 .3 V • VAGC: 0 .6 -2 .3 V • SUPER SMALL SURFACE MOUNT PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE


    OCR Scan     		PDF UPC8119T UPC8120T 8119T 8120T UPC8119T, UPC8120T UPC8119T-E3

    Untitled

    Abstract: No abstract text available
    Text: Video Amplifiers ELECTRICAL CHARACTERISTICS Ta s. 2 5 t! Vcc (V) VMM AVd17 tí*.? tpd4? Vchcmï5 V o p p (MHz) (ns) (ns) (V) (Vp-p) Gain 1 Gain 2 Gain 1 Gain 2 Gain 1 Gain 2 Sain 1 Gain 2 Icc (mA) ISINK6 <mA) Demand Pari Number TYP TYP TYP TYP TYP TYP TYP


    OCR Scan     		PDF UPC1663GV AVd17 UPG137GV UPG138GV UPG152TA OT-26

    UPD812

    Abstract: IPC811 iPC812
    Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS ¿ ¿ P C 8 1 1 9 T , ¿ ¿ P C 8 1 2 T GAIN CONTROL AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE DESCRIPTION /¿PC8119T and /¿PC8120T are silicon m onolithic integrated circuits designed as gain control am plifier. Due to 100


    OCR Scan     		PDF uPC8119T uPC8120T PC8119T PC8120T UPD812 IPC811 iPC812

    tpc8130

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS u P C 8 1 3 0 T A , u P C 8 1 3 1 T A -1 5 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE DESCRIPTION The ,uPC8130TA and ,uPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier.


    OCR Scan     		PDF uPC8130TA uPC8131TA uPC8119T uPC8120T WS60-00-1 C10535E) tpc8130

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS ¿tPC8119T, ¿iPC8120T GAIN CONTROL AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE DESCRIPTION ¿¡PC8119T and ¿¡PC8120T are silicon monolithic integrated circuits designed as gain control amplifier. Due to 100


    OCR Scan     		PDF tPC8119T, iPC8120T PC8119T PC8120T WS60-00-1 VP15-00-3 IR35-00-3 C10535EJ7V0IF00)

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ IV IF f * / BIPOLAR ANALOG INTEGRATED CIRCUIT / uPC8130TA, uPC8131TA -1 5 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE DESCRIPTION The ,uPC8130TA and ,uPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier.


    OCR Scan     		PDF uPC8130TA uPC8131TA uPC8119T uPC8120T WS60-00-1 C10535E)

    t06 sot 23

    Abstract: UPC2710 upc2713
    Text: RF 1C Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL CHARACTERISTICS’ f t * • 25“C Typical Fraquancy Hangs Vcc 93H B V) Pan Numbar MIN 9m NF (dB) Icc <mA) TYP MAX Gain RLin RLout PldB ISOL (dB) (dB) (dB) (dBm) (dB) TYP TYP TYP TYP TYP MIN TYP MAX Pfeg.


    OCR Scan     		PDF UPC1678GV6 UPC2708T2 UPC2709TB2 UPC2710T6 UPC2711TB2 UPC2712TB2 UPC2713T6 UPC2745TB6 UPC2746TB6 UPC2747T3 t06 sot 23 UPC2710 upc2713

    transistor A 564

    Abstract: transistor am s20 T06 transistor transistor t06 19 transistor t06
    Text: Transistor Arrays gtECTRICAL CHARACTERISTICS <7> * 2SX! • fr Mm SLt * ; UPA101G1 UPA1Q2G2 UPA103G3 hFE Ces CCS: mA) CcB tpF) (pF) (pF) MAX MAX TYP TYP TYP TYP 1.0 1.0 1.0 1.0 100 - 1.0 1.0 100 100 0.9 1.4 1.4 1.4 •:1.4 iCBO (GHz) TYP MAX 9 40 40 40


    OCR Scan     		PDF UPA101G1 UPA102G2 UPA103G3 DC-150 UPB1004GS1 UPC8116GR2 UPC2798GR3 transistor A 564 transistor am s20 T06 transistor transistor t06 19 transistor t06