UPD42100 Search Results

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

PD421001

Contextual Info: E C ELECTRONICS INC OSE D "I b 4 2 7 5 E 5 O o a i a S T 3 6427525 N E C ELECTRONICS 05E 21859 INC NEC NEC Electronics Inc. Description The/uPD421001 is a nibble version, 1,048,576-word by 1-bit dynamic CM OS RAM designed to operate from a single +5-volt power supply. Advanced polycide

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

NEC 555

Abstract: 511000 18pin nec v70 18PIN UPD421000V-12 UPD421000V-80 UPD421001C-10 UPD421001C-80 UPD421001LA-10 UPD421002C-80
Contextual Info: - 209 IM CMOS -f ^ £ tt « TRAC max ns CC) V Dynamic f' R A M (1 0 4 8 5 7 6 x 1 ) > 7 fttï TRCY min (ns) TCAD min (ns) TAH Hin (ns) TP min (ns) m 18PIN m TWCY min (ns) TDH min (ns) TRWC min (ns) V D D or V C C IDD (V) (mA) A I DD STANDBY ( I SB/ I SB2)

NEC 421000

Abstract: TTL 7404 421000 60 PD71088 7404 uPD421000 LS112 sn 7404 n ic diagram LM 7404 ic 421000
Contextual Info: J V f« L Z NEC Electronics Inc. APPLICA TIO N NOTE 5 3 //P D 4 2 10 00 /y u P D 421 00 1/yu P D 4 21 002 1 - m e g a b it d y n a m ic r a m s Description NEC’s //PD421000, uPD421001, and ¿IPD421002 are 1-m egabit dynam ic RAMs DRAMs m anufactured with

SIMM 30-pin

Contextual Info: \T J7 2 *^ ^ MC-421000C9 1,048,576 x 9-BIT cm o s d y n a m ic ra m m o d u le w NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations T he M C -421000C 9 is a static-colum n 1,048,576-w ord by 9-b it dynam ic RAM m odule designed to operate

TTL 7404

Abstract: D421000 pd421000 D42100
Contextual Info: J V I V C2 NEC Electronics Inc. A P P L IC A T IO N N O TE 53 ^ P D 421000///P D 421001///P D 421002 1- m e g a b i t d y n a m i c r a m s Description N E C ’s aiPD421000, /¿PD421001, and /¿PD421002 are 1-m e g a b it d y n a m ic R AM s D R A M s m an u fa ctu re d w ith

CX20106A

Abstract: GL7805 GL386 GL1150 GL7809 GL317 GLC556 LA7830 GL1151 GL3401
Contextual Info: TABELA DE EQUIVALÊNCIAS SEMICONDUTORES GOLDSTAR formerly hosted by http://www.robvendas.hpg.ig.com.br/APOST/GOLD.HTM 1 of 6 G53 GAS105 LAG553-2 2SB463 - - 2SB474 GD75188 GD75189 DS1488 DS1489 SN75188 SN75189 GE4 GE1012 48-124376 MOC3012 - - GE3009 GE3010

Contextual Info: MFC M C-421000B8 1 ,0 4 8 ,5 7 6 X 8-BIT c m o s d y n a m ic r a m m o d u le NEC Electronics Inc. PRELIM IN A RY INFORMATION Description Pin Configurations The MC-421000B8 isa nibble-mode 1,048,576-word by 8-bit dynamic R A M module designed to operate from a

Contextual Info: NEC NEC Electronics Inc. MC-421000A36 1,048,576 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-421000A36 is a fast-page dynamic RAM mod­ ule organized as 1,048,576 words by 36 bits and de­ signed to operate from a single +5-volt power supply.

Contextual Info: >i M C -421000B 9 -| 0 4 8 5 7 6 x 9-B IT c m o s d y n a m ic r a m m o d u le w NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations The MC-421000B9 is a nibble-m ode 1,048,576-word by 9-bit CMOS dynam ic RAM m odule designed to operate

Contextual Info: fiPD421002 1,048,576 X 1-Bit Dynamic CMOS RAM V NEC Electronics Inc. Description Pin Configurations The nPD421002 is a static-colum n dynamic RAM orga­ nized as 1,048,576 words by 1 bit and designed to operate from a single + 5-volt power supply. Advanced

TMS4C1024

Abstract: TMS4C1024-80 AZ-80 511000 NEC 701 TC511002P-10 tms*1024 18PIN TC51 TC511001C-10
Contextual Info: 208 — IM CMC'S X m & : n f» ca D y n a m i c -f • •/ f TRAC max ns TRCY rain (ns) TCAD (ns) TAE min (ns) > RAM (1 0 4 8 5 7 6 x 1 ) y & 1i m 1 8 P I N A M TP min (ns) WCY min (ns) TDH min (ns) TRWC min (ns) V D D or V C C I DD (V) (fliA) I DD STANDBY

MC-421000A36

Contextual Info: NEC NEC Electronics Inc. MC-421000A36 1,048,576 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-421000A36 is afast-p age dynamic RAM module organized as 1,048,576 words by 36 bits and designed to o perate from a single + 5-volt power supply. Ad­

TTL 7404

Abstract: L9112 d032g lm 7404 and pin configuration NS160N tcp 8111 PD421000 IC-16 6283N nec 421000-80
Contextual Info: N E C ELECTRONICS INC SEC NEC Electronics Inc. 3ÔE D • bM27S25 ÜÜ32G2Û 4 H N E C E APPLICATION NOTE 5 3 uPD421000/uPD421001/uPD421002 1-MEGABIT DYNAMIC RAMs Description NEC’s uPD421000, ¿/PD421001, and //PD421002 are 1-megabit dynamic RAMs DRAMs manufactured with

0170R

Abstract: MC-422000A36BJ-80 MC422000A36FJ70 MC-422000A36FJ-80 MC-422000A36FJ MC-422000A36BJ MC-422000A36FJ-70
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-422000A32, 422000A36 SERIES 2 M-WORD BY 32-BIT, 2 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-422000A32 series is a 2 097 152 w ords by 32 bits dynam ic RAM m odule on which 16 pieces of

Contextual Info: V P D 421002 1 ,0 4 8 ,5 7 6 X 1 -B IT d y n a m ic c m o s r a m * ^ JL/ W N E C Electronics Inc. P R E LIM IN A R Y INFORMATION Description T h e //PD 421002 is a static-colum n, 1,048,576-w ord by 1-bit dynam ic C M O S RAM designed to operate from a single + 5 -v o lt pow er supply. T he device is fabricated