UPF1 Search Results

J216

Abstract: UPF1030 J2-13
Contextual Info: URFDB Sec 05_1030 11/3/99 10:39 AM Page 5-1 UPF1030 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM,

Contextual Info: RELEASED DATA SHEET UPF105 Series Universal Input Power Factor Corrected 120 Watt Switchers Features: 1 1 1 1 1 1 1 1 Active Power Factor Correction PFC 75% typical efficiency EN55022-B conducted Up to 4 outputs Compact 6.0" x 3.3" x 1.4" size UL, cUL, VDE and CE

ultrarf

Abstract: UPF18030 MRF18030
Contextual Info: UPF18030 30W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power

MRF19030

Abstract: UPF18030-095
Contextual Info: UPF18030-095 30W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for DCS base station applications in the frequency band 1.805 GHz to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM,

cree rf

Abstract: UPF14060 UPF14060F UPF14060P
Contextual Info: UPF14060 60W, 1.4 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in

Contextual Info: UPF14060 60W, 1.66 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in

potentiometer 1k ohm

Abstract: L2 diode ultrarf ATC100 MMBTA64 MRF19060 UPF19060 Z8 SOT23 diode zener Z11 0603 440117
Contextual Info: UPF19060 60W, 2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS and PCN base station applications in the frequency band 1.9 to 2.0 GHz. Ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB operation.

ultrarf

Abstract: UPF18045-159 2200PF 470PF 47UF MBD701 MMBTA64 1UF 50V SMT CASE C diode gp 805
Contextual Info: UPF18045-159 45W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a typical output power of 50 W PEP for high peak-to-average signals , this device is well suited in

ultrarf

Abstract: MRF19090 UPF19090
Contextual Info: UPF19090 90W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 1.9 to 2.0 GHz. Rated with a minimum output power of 90W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power

UPF1010

Abstract: f940 ultrarf
Contextual Info: URFDB Sec 04_1010 11/3/99 10:37 AM Page 4-1 UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,

DP100

Abstract: EN55022-B UPF105-105 UPF105-124 UPF105-148 US100 Molex CE certificate
Contextual Info: flexibility C O R P O R A T I O N S E R I E S UPF105 Series Universal Input Power Factor Corrected 120 Watt Switchers • Active Power Factor Correction PFC • 75% typical efficiency • EN55022-B conducted • Up to 4 outputs • Compact 6.0” x 3.3” x 1.4”

UPF150-301

Abstract: UPF150-401 UPF150 DP150 PH 36A UPF150-408 EN55022-B UPF150-234 US150 UPF1
Contextual Info: flexibility C O R P O R A T I O N S E R I E S UPF150 Series Universal Input Power Factor Corrected 150 Watt Switchers •41920 Christy Street •Fremont, California •94538-3158 •510-657-2635 •Fax: 510-657-6634 •sales@digipwr.com •www.digipwr.com

F1 J36

Abstract: ultrarf UPF1080
Contextual Info: URFDB Sec 07_1080 11/3/99 10:53 AM Page 7-1 UPF1080 80W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM,

ultrarf

Abstract: J216
Contextual Info: UPF1030 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers

J181

Abstract: UPF1010F f940 ultrarf UPF1010 UPF1010P package type 440109
Contextual Info: UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers

J216

Abstract: UPF1030P UPF1030 UPF1030F J156 J-146
Contextual Info: UPF1030 30W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.

UPF1080F

Abstract: UPF1080 J120 MOSFET upf1080p
Contextual Info: UPF1080 80W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.

ultrarf

Abstract: UPF14060 UPF14060F UPF14060P
Contextual Info: UPF14060 60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications at 1400MHz. Rated with a minimum output power of 60W, it is ideal for 16QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB

N channel mosfet

Contextual Info: UPF1N50 SURFACE MOUNT N CHANNEL MOSFET W ATE R TOW N DIVISI ON PRELIMINARY DESCRIPTION KEY FEATURES The UPF1N50 is ideal for ultra small motor control and switch mode power supply applications. The Powermite 3 is designed for surface mounting using vapor phase,

ultrarf

Abstract: MRF19030
Contextual Info: UPF19030 30W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for PCN and PCS base station applications in the frequency band 1.9 to 2.0 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power

MRF19030

Abstract: UPF18030-095 IS954
Contextual Info: UPF18030-095 30W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for DCS base station applications in the frequency band 1.805 GHz to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM,

GP 101 GPS

Abstract: ultrarf 01UF ATC100 MRF19090 UPF19090
Contextual Info: UPF19090 90W, 2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS and PCN base station applications in the frequency band 1.9 to 2.0 GHz. Ideal for CDMA, EDGE, GSM, and Multi-Carrier Power Amplifiers in Class A or AB operation.

UPF1060

Abstract: POWER 28V 3A 60W ultrarf
Contextual Info: URFDB Sec 06_1060 11/3/99 10:51 AM Page 6-1 UPF1060 60W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA,

UPF1060F

Abstract: UPF1060P UPF1060 POWER 28V 3A 60W J027
Contextual Info: UPF1060 60W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.