UPF2 Search Results

J64-1

Abstract: UPF20120 ultrarf J296 J6-41 J641
Contextual Info: URFDB Sec 12_20120 11/3/99 11:19 AM Page 12-1 UPF20120 120W Push-Pull, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum

J406

Abstract: J248 J425 ultrarf UPF2245 J242
Contextual Info: URFDB Sec 14_2245 11/3/99 11:23 AM Page 14-1 UPF2245 45W, 2.2GHz, 26.5V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications operating at or near 2.2GHz. Rated with a minimum output power of 45W, it is ideal for CDMA, TDMA,

diode C531

Abstract: c531 diode C531 ultrarf 10UF MMBTA64 MRF21060 UPF21060 f217
Contextual Info: UPF21060 60W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.1 to 2.2 GHz. Rated with a minimum output power of 60W, it is ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier

UPF200-AA

Abstract: power supply 12v 10a input 230v ac UMEC CISPR22 IEC1000-3-2 POWER SUPPLY 220V AC TO 12v 359006 UMEC upf200-aa CISPR-22 50/UMEC upf200-aa
Contextual Info: UPF200-AA 200W 1U Size Single Power Supply Meet IEC1000-3-2 Harmonic Regulation Universal AC Input Voltage UL, CUL, TUV, CE, CB approved. Meet FCC Class B , CISPR22 Class B Protection on OVP,OPP Short Protection Latch OFF MTBF > 100,000 hours APPLICATION:

UPF2030

Abstract: ultrarf
Contextual Info: URFDB Sec 09_2030 11/3/99 11:09 AM Page 9-1 UPF2030 30W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA,

UPF2010F

Abstract: ultrarf UPF2010 UPF2010P
Contextual Info: UPF2010 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers

F1840

Abstract: Cree Microwave cree rf UPF2012 UPF2012-178 UPF2012F UPF2012P package type 440109
Contextual Info: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.

UPF250-AA

Abstract: POWER SUPPLY 220V AC TO 12v UMEC CISPR22 IEC1000-3-2 12V to 220v ac 5A
Contextual Info: UPF250-AA 250W 1U Size Single Power Supply Meet IEC1000-3-2 Harmonic Regulation Universal AC Input Voltage UL, CUL, TUV, CE, CB approved. Meet FCC Class B , CISPR22 Class B Protection on OVP,OPP Short Protection Latch OFF MTBF > 100,000 hours APPLICATION:

ultrarf

Abstract: 10UF MMBTA64 MRF21090 UPF21090 irl 2807 300GP 82-5022
Contextual Info: UPF21090 90W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.1 to 2.2 GHz. Ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB operation.

J377

Abstract: J380 J373 J207 ultrarf UPF2425 J362 J2-21 J209 J369
Contextual Info: URFDB Sec 15_2425 11/3/99 11:27 AM Page 15-1 UPF2425 25W, 2.4GHz, 26.5V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications operating at or near 2.4GHz. Rated with a minimum output power of 25W, it is ideal for CDMA, TDMA,

UPF2010

Abstract: 1103AM package type 440109
Contextual Info: URFDB Sec 08_2010 11/3/99 11:03 AM Page 8-1 UPF2010 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA,

Contextual Info: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.

Contextual Info: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.

UPF2010-178

Abstract: Cree Microwave upf2010 AC DC 10w 100UF 47PF UPF2010 UPF2010F UPF2010P J033 package type 440109
Contextual Info: UPF2010 10W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rater with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.

UPF2030F

Abstract: Cree Microwave cree rf UPF2030 UPF2030P
Contextual Info: UPF2030 30W, 2 GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 2GHz. It is rated with a minimum output power of 30W. It is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier

J457

Abstract: J463 ultrarf UPF2445 j149 J476 164TM f2390 j142 J147
Contextual Info: URFDB Sec 16_2445 11/3/99 11:29 AM Page 16-1 UPF2445 45W, 2.4GHz, 26.5V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications operating at or near 2.4GHz. Rated with a minimum output power of 45W, it is ideal for CDMA, TDMA,

UPF2030F

Abstract: UPF2030 UPF2030P
Contextual Info: UPF2030 30W, 2 GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 2GHz. It is rated with a minimum output power of 30W. It is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier

ultrarf

Abstract: UPF2060 J351 118 gpe
Contextual Info: URFDB Sec 11_2060 11/3/99 11:17 AM Page 11-1 UPF2060 60W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS 11 Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA,

J243

Abstract: j182 J464 ultrarf UPF2050 j453 j247
Contextual Info: URFDB Sec 10_2050 11/3/99 11:13 AM Page 10-1 UPF2050 50W PEP, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum peak envelope output power of 50W, it is ideal for

J427

Abstract: ultrarf UPF2225 J437 J417
Contextual Info: URFDB Sec 13_2225 11/3/99 11:21 AM Page 13-1 UPF2225 25W, 2.2GHz, 26.5V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications operating at or near 2.2GHz. Rated with a minimum output power of 25W, it is ideal for CDMA, TDMA,

MRF21030

Abstract: UPF21030
Contextual Info: UPF21030 30W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.1 to 2.2 GHz. Rated with a minimum output power of 30W, it is ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier Power

HP4432B

Abstract: UPF21010
Contextual Info: UPF21010 10W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.110 to 2.170 GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers

MRF21030

Abstract: ultrarf UPF21030
Contextual Info: UPF21030 30W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 2.1 to 2.2 GHz. Rated with a minimum output power of 30W, it is ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier

TA8190

Contextual Info: T O SH IB A TC9263AF TO SH IBA CM OS DIG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC9263AF CD SINGLE-CHIP PROCESSOR The TC9263AF is a single chip processor for sync separation protection/synchronization, EFM dem odulation, error correction / interpolation,