UPF2012P Search Results
UPF2012P Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|---|
| UPF2012P |
|
FET Transistor, 12W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs | Original | 164.39KB | 6 |
UPF2012P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
F1840
Abstract: Cree Microwave cree rf UPF2012 UPF2012-178 UPF2012F UPF2012P package type 440109
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Original |
UPF2012 30dBc UPF2012F UPF2012P UPF2012 F1840 Cree Microwave cree rf UPF2012-178 UPF2012F UPF2012P package type 440109 | |
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Contextual Info: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation. |
Original |
UPF2012 30dBc UPF2012F UPF2012P 44017r UPF2012 | |
|
Contextual Info: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation. |
Original |
UPF2012 30dBc UPF2012F UPF2012P UPF2012 UPF2012F UPF2012P |