UPG501 Search Results

Contextual Info: 5 GHz DIVIDE-BY-4 STATIC PRESCALER FEATURES UPG501B INPUT POWER vs. INPUT FREQUENCY • W IDE OPERATING FREQUENCY RANGE: fiN = 1.5 GHz to 5 GHz T a = 25°C • SINGLE SUPPLY VOLTAGE: V dd = + 1 0 V • D IVISIO N RATIO OF 4 • HIGH R E LIA B ILITY H ER M E TIC A LLY SEA LED

UPG501B

Contextual Info: 5 GHz DIVIDE-BY-4 STATIC PRESCALER FEATURES UPG501B UPG501P INPUT POWER vs. INPUT FREQUENCY • WIDE OPERATING FREQUENCY RANGE: fiN = 1 .5 GHz to 5 GHz T a = 25°C • SINGLE SUPPLY VOLTAGE: V dd = +10 V +20 %\ +15 • DIVISION RATIO OF 4 •? nu T> • HIGH RELIABILITY HERMETICALLY SEALED

501B 8 P

Abstract: 501B
Contextual Info: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT uPG501 B 5 GHz DIVIDE-BY-2 STATIC PRESCALER DESCRIPTION The /¿PG501 B is a divide-by-4 prescaler capable of operating up to 5 GHz. It is intend to be used in the frequency synthesizers of microwave application systems and measurement

Contextual Info: 5 GHz DIVIDE-BY-4 STATIC PRESCALER FEATURES UPG501B INPUT POWER vs. INPUT FREQUENCY • WIDE OPERATING FREQUENCY RANGE: fiN - 1.5 GHz to 5 GHz Ta = 25°C • SINGLE SUPPLY VOLTAGE: V d d = +10 V • DIVISION RATIO OF 4 • HIGH RELIABILITY HERMETICALLY SEALED

501B- 8 P

Abstract: 501B 8 P
Contextual Info: 5 GHz DIVIDE-BY-4 STATIC PRESCALER FEATURES_ UPG501B INPUT POWER vs. INPUT FREQUENCY • WIDE OPERATING FREQUENCY RANGE: fiN - 1.5 GHz to 5 GHz Ta - 25°C +20 • SINGLE SUPPLY VOLTAGE: V do - +10 V +15 • DIVISION RATIO OF 4

501B- 8 P

Contextual Info: NEC UPG501B UPG501P 5 GHz DIVIDE-BY-4 STATIC PRESCALER OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE BF08 • W ID E O P E R A T IN G F R E Q U E N C Y R A N G E : fiN = 1.5 G H z to 5 G H z (Ta = 2 5 °C ) • S IN G L E S U P P L Y V O L T A G E : V dd = + 10 V

bf08

Abstract: UPG501B UPG501P prescaler ghz
Contextual Info: NEC 5 GHz DIVIDE-BY-4 STATIC PRESCALER FEATURES OUTLINE DIM ENSIONS • W ID E O PERATIN G FREQ UENC Y RANGE: fiN = 1.5 G Hz to 5 G Hz Ta = 25°C • SIN G LE SU PPLY VO LTAG E : V dd = + 10 UPG501B UPG501P (Units in mm) OUTLINE BF08 V 1.7 MAX • D IV IS IO N RATIO OF 4

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

Contextual Info: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS E M r M O w m I h M m • Ta • « P C RLm dB Rlour (dB) IS0L (dB) «1. P tclsft N * MAX TYP TYP TYP Cot* ucsw ^iw i No. 45 60 10 10 40 B08 Hermetic Metal Ceramic 6-4 70 100 140 8 8 40 B08 Hermetic Metal Ceramic

Prescalers

Abstract: UPB582C uPG506 UPG503 UPG506P UPG502 uPB584 UPB584G UPB585G AN1014
Contextual Info: California Eastern Laboratories AN1014 APPLICATION NOTE Suppression of Prescaler Self-Oscillation NEC/CEL offers a broad range of silicon and GaAs MMIC prescalers. Prescalers are integrated circuits designed to generate an output signal at a frequency which is an

B585

Abstract: rank 502 G503 bf08 g502 B-584 g506 B584 B587 UPB585B
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. BF08 7.0±0.5 1.27 1.27 1.27 ±0.1 ±0.1 ±0.1 8 7 6 1.7 MAX 5 10.4±0.5 2.6 4.4±0.2 MARKING XXX RANK 1 2 3 4 +0.05 0.2 -0.02 0.4 5.0±0.2

Contextual Info: G a A s Monolithic Circuits Wideband Amplifiers Frequency Teat Gain Range Conditions dB AG (dB) RU n R L out (dB) TYP ISOL (dB) TYP P*fl- Pacta 99 FaxOn Demand TYP MAX TYP MIN (mA) TYP MAX (dB) TYP UPG100B 0.05 to 3.0 V dd = +5V V gg = -5V 16 ±1.5 2.7 +6

NEC Ga FET marking L

Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a
Contextual Info: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima

prescaler 120 ghz

Abstract: BF08 uPG504 5 GHz DIVIDE-BY-2 STATIC PRESCALER UPG100B
Contextual Info: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS Electrisai Characteristics @ Ta « 25°C Test Conditions Gain dB NF (dB) Pan Frequency Ruga AG (dB) Number (GHz) IP G 1 0 0 B 0.05 to 3.0 V dd = +5V VGG = -5V 16 ±1.5 2.7 IP G 1 0 1 B 0.05 to 3.0 V dd = +8V

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

ohm PT-1000

Abstract: BF08 UPG501B
Contextual Info: 5 GHz DIVIDE-BY-4 STATIC PRESCALER FEATURES • • • • INPUT POWER vs. INPUT FREQUENCY WIDE OPERATING FREQUENCY RANGE: fIN = 1.5 GHz to 5 GHz TA = 25°C SINGLE SUPPLY VOLTAGE: VDD = +10 V +20 +15 DIVISION RATIO OF 4 HIGH RELIABILITY HERMETICALLY SEALED

BF08

Abstract: UPG501B
Contextual Info: 5 GHz DIVIDE-BY-4 STATIC PRESCALER FEATURES • • • • INPUT POWER vs. INPUT FREQUENCY WIDE OPERATING FREQUENCY RANGE: fIN = 1.5 GHz to 5 GHz TA = 25°C SINGLE SUPPLY VOLTAGE: VDD = +10 V +20 +15 DIVISION RATIO OF 4 HIGH RELIABILITY HERMETICALLY SEALED