UPS ES 550 Search Results

cx1100-004

Abstract: CX1190 CX1020 CX1100-0920 CX1000 CX10000111 CX1020-0120 CX1100-0900 BK3100 cx 2030 embedded pc
Contextual Info: Dokumentation zu den USV - Modulen des CX10x0-Systems CX1100-0900 550 mA / 20 As CX1100-0910 (1,1 A / 20 As) CX1100-0920 (1,1 A / 40 As) Version:1.2 Datum:16.01.2007 Inhaltsverzeichnis Inhaltsverzeichnis CX1100-09xx, USV für die CX10x0-Systeme 1. Vorwort

600va ups circuit diagrams

Abstract: toshiba ddcb3a schematic diagram online UPS schematic diagram UPS 600va UPS 600va circuit diagram matrix 1000 w ups schematic diagram UPS 600va MDM 6200 ses 554 ups 600va circuit diagrams
Contextual Info: Authorized Information Technology Schedule Price List FSC Group 70 General Purpose Commercial Information Technology Equipment, Software and Services Digital Telephone, IVR and Voice Messaging Systems FSC Classes 7042 Mini and Micro Computer Control Devices

UPS es 550

Abstract: SKM300GB123D
Contextual Info: SKM 300GB123D T = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol IGBT Conditions Values 1200 V Tcase = 2 5 ” C 300 A Tease = 80 °C 220 A 400 A ±20 V 10 MS °C 260 A = 80 °C 180 A 400 A = 150 °C 2200 A Tcase = 25 °C 350 A 230 A 600

Contextual Info: □ I X Y Advanced Technical Information S High Voltage BIMOSFET Monolithic Bipolar MOS Transistor VCES IXBH 9N140 IXBH 9N160 ^C 25 V C E sa t N -C hannel, E n ha n ce m e n t M ode tfi 1400/1600 V 9A 5.8 V typ. 40 ns T O -2 4 7 A D S ym bo l C o n d itio n s

Contextual Info: : IXYS Prelim inary Data IXSN 80N60A High Current IGBT V ces = ^C25 = 600 V 160 A 3 V ^ C E s a t = Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES Tj = 25 °C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE= 1 600 A v GES Continuous

ge traction motor

Contextual Info: GP500LSS06S M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R DS4324 - 4.4 Decem ber 1998 S upersedes July 1998 version, DS4324 - 4.3 The GP500LSS06S is a single switch 600V, robust n channel e nhancem ent mode insulated gate bipolar transistor IGBT . Designed for low power loss, the module

RGE 17-18

Abstract: TO220-4 weight
Contextual Info: □ IXYS Advanced Technical Information IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series V CES IC 25 V C E sa t =1200 V = 30 A = 3.8 V = 115 ns t fi( ty p ) Sym bo l T e s tC o n d itio n s V CES ^ = 2 5 °C to 150°C 1200 V V CGR Tj = 25 °C to 150°C ; R GE = 1 M £i

10N100

Contextual Info: DIXYS Low VCE 6al IGBT High speed IGBT IXGH10N100 IXGH10N100A V y c es ^C25 v CE (sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Ae Sym bol Test Conditions Maximum Ratings V ces T, = 25“C t o 150°C 1000 V co„ ^ = 25“C to 150“C; RaE = 1 M£2 1000 V VGEs

Contextual Info: OIXYS l«»v .laBT IXSH/IXSM 25 N100 IXSH/IXSM 25 N100A High Speed IGBT V* C E S ^C25 V * CE sat 1000 V 1000 V 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Sym bol T est C o n dition s M axim um R atings v CES T j = 25°C to 150°C 1000 V V CGR T j = 25°C to 150°C; RGE = 1 M il

75n120

Contextual Info: □ IX Y S High Voltage IGBT IXDN 75N120 1200 V 150 A 2.2 V V CES v I C25 CE sat typ Short Circuit S O A Capability Square R B SO A miniBLOC, SOT-227 B TO Preliminary Data E153432 E Symbol Conditions VcES Tj = 25°C to 150°C 1200 V VcCR Tj = 25°C to 150°C; Rge = 20 kQ

Contextual Info: 82C284/883 Clock Generator and Ready Interface for 80C286 Processors February 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The Harris 82C284/883 is a clock generator/driver

Contextual Info: □IXYS IXSH/IXSM 35N100A High speed IGBT VC ES I C 25 V C E sat = 1000 V = 70 A = 3.5 V Short Circuit SOA Capability Sym bol T est C onditions v CES T j = 25°C to 150°C 1000 V V CGR T0 = 25°C to 150°C; RGE = 1 Mi2 1000 V V GES C ontinuous +20 V V GEM

ge motor 752

Abstract: 60N60 IXGH60N60 60n60 igbt
Contextual Info: H Î Y Y ^JL sIk»!? flH V w A Ultra-Low VCE sat IGBT IXGH/IXGK/IXGT 60N60 V CES I 600 V 75 A 1.6 V C25 V CE(sat) Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES T d = 25°C to 150°C 600 V V CGR T d = 25°C to 150°C; RGE = 1 MQ 600 V

Contextual Info: □ 1XYS Preliminary Data Sheet IGBT IXG A /IXG P12N 100U 1 IXGA/IXG P12N100AU1 Combi Pack Symbol Test Conditions V CES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE= 1 Mi2 1000 V Continuous ±20 V V GEM Transient +30 V ^C25 Tc = 25°C 24 A ^C90

Contextual Info: MITSUBISHI IGBT MODULES CM150TF-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are d e ­ signed fo r use in sw itching app lica ­ tions. Each m odule consists of six IGBTs in a three phase bridge con­ figuration, w ith each tra n sisto r hav­

Contextual Info: General Purpose Three-phase and Neutral Line Filter Three-Phase + Neutral Line Filters FN 356 Three-phase and neutral line filter for general four-wire filtering tasks Choice of connection style Low operating leakage current Compliant with IEC 60950 Approvals

1550S

Abstract: FMRP-202 SCSI 68PIN FMV-CBL832 GP5-414 DCBL-RPB04 fujitsu vl 1550s GP518 FMV-CBL606 FMFX-511
Contextual Info: システム構成図 ※OSにより接続可能装置は異なります。詳細はハードウェア一覧を参照願います。 T：カスタムメイド対象製品を示す。 PRIMERGY ディスプレイ／キーボード／マウス PRIMERGY デスクサイドタイプ ラックマウント構成の場合は,P51を参照下さい

Contextual Info: General Purpose Three-phase and Neutral Line Filter Three-Phase + Neutral Line Filters FN 356 Three-phase and neutral line filter for general four-wire filtering tasks Choice of connection style Low operating leakage current Compliant with IEC 60950 Approvals

Contextual Info: MITSUBISHI IGBT MODULES C M 1 5 0 T F - 1 2 H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of six IGBTs in a three phase bridge con­ figuration, with each transistor hav­

Contextual Info: MITSUBISHI IGBT MODULES CM200DY-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­

Contextual Info: General Purpose Three-phase and Neutral Line Filter Three-Phase + Neutral Line Filters FN 356 Three-phase and neutral line filter for general four-wire filtering tasks Choice of connection style Low operating leakage current Compliant with IEC 60950 Approvals

Contextual Info: MbflhSEb 0 0 0 1 5 3 3 'ìlb * I X Y IXSN51N60AU1 IGBT with Diode IC25 VCES High Short Circuit SOA Capability CE sat = 53 A = 600 V = 2.5 V Preliminary data (09/93) Maximum Ratings Symbol Test Conditions v" c e s Tj = 25'C to 150‘C 600 V v COR Tj = 25’ C to 150‘C; RGE= 1 Mi2

FAG 28 diode

Abstract: gp300lss INPUT/FAG 28 diode AN4504 FAG 50 diode
Contextual Info: GP300LSS16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes July 1996 version, DS4136 - 5.2 DS4136 -5 .3 March 1998 TYPICAL KEY PARAMETERS 1600V ' c E sa„ 3.3V *C(CONT 300A 'c p k , 600A tr 270ns t. 590ns APPLICATIONS • High Power Switching.

ixgn60n60

Contextual Info: H Î Y Y ^JLsIk»!? flHVw AUltra-Low VCE sat IGBT ixgn vCES 60N60 ^C25 VCE(sat) 600 V 100 A 1.6 V Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 MQ 600 V v GES Continuous