diode marking 226
Abstract: diode BY 226 all diodes ratings UT3418L UT3418
Text: UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in
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Original
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PDF
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UT3418
UT3418
UT3418L
UT3418G
UT3418-AE3-R
UT3418L-AE3-R
UT3418G-AE3-R
QW-R502-226
diode marking 226
diode BY 226
all diodes ratings
UT3418L
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diode marking 226
Abstract: diode BY 226
Text: UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in
|
Original
|
PDF
|
UT3418
UT3418
UT3418L-AE3-R
UT3418G-AE3-R
OT-23
QW-R502-226
diode marking 226
diode BY 226
|
diode BY 226
Abstract: diode marking 226
Text: UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in
|
Original
|
PDF
|
UT3418
UT3418
UT3418L
UT3418-AE3-R
UT3418L-AE3-R
OT-23
QW-R502-226
diode BY 226
diode marking 226
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UT3418 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE FI ELD EFFECT T RAN SI ST OR ̈ DESCRI PT I ON The UT3418 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in
|
Original
|
PDF
|
UT3418
UT3418
UT3418L-AE3-R
UT3418G-AE3-R
QW-R502-226
|