UT8Q512 Search Results

Contextual Info: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Data Sheet January 21, 2002 FEATURES q 25ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows operation as 8, 16, 24, or 32-bit data width

Contextual Info: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Data Sheet August, 2002 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Preliminary Data Sheet June 20, 2001 FEATURES q 35ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows

Contextual Info: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Advanced Data Sheet December 17, 2001 FEATURES q 25ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows

Contextual Info: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Preliminary Data Sheet November 21, 2001 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

ut8q512

Contextual Info: Standard Products UT8Q512 512K X 8 SRAM Advanced Data Sheet UT El i i « mas t, i & 1 m « • V i T i: a t « m February 16, 1999 i FEATURES INTRODUCTION □ 25ns 3.3 v olt supply m axim um address access tim e □ A synchronous operation for com patibility w ith industrystandard 512K x 8 SRA M s

512K32

Abstract: UT8Q512K32 5962-0
Contextual Info: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Data Sheet March, 2009 FEATURES ‰ 25ns maximum 3.3 volt supply address access time ‰ MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows operation as 8, 16, 24, or 32-bit data width

Contextual Info: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Data Sheet August, 2003 FEATURES ‰ 20ns 3.3 volt supply maximum address access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ TTL compatible inputs and output levels, three-state

UT8Q512

Contextual Info: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Data Sheet November, 2004 FEATURES ‰ 20ns 3.3 volt supply maximum address access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ TTL compatible inputs and output levels, three-state

UT8Q512E

Abstract: UT8Q512K32 UT8Q512K32E UT8Q1024K8 UT8Q512 UT8Q512K8
Contextual Info: May 1, 2008 Dear Customer: The purpose of this letter is to update customers on the die inventory of Aeroflex’s 3.3V 4M Quantified Commercial-Off-The Shelf QCOTSTM used in our UT8Q512K8 and UT8Q512K32 products. In August 2007, Aeroflex announced the finite supply of the

UT8Q512

Abstract: CERAMIC FLATPACK 36 socket
Contextual Info: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Data Sheet February, 2003 FEATURES q 20ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

UT8Q512

Abstract: CERAMIC FLATPACK
Contextual Info: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Data Sheet April, 2002 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products UT8Q512K32 16Megabit SRAM MCM Preliminary Data Sheet February 23, 2000 FEATURES q 25ns maximum address access time q MCM contains four 4 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows operation as 8, 16, 24, or 32-bit data width

Contextual Info: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Advanced Data Sheet October 4, 2001 FEATURES q 25ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows

Contextual Info: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Advanced Data Sheet November 21, 2001 FEATURES q 25ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows

UT8Q512

Contextual Info: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Data Sheet January 21, 2002 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

512K32

Abstract: UT8Q512K32
Contextual Info: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Data Sheet November, 2004 FEATURES ‰ 25ns maximum 3.3 volt supply address access time ‰ MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows operation as 8, 16, 24, or 32-bit data width

SRAM Cross References

Abstract: UT9Q512K8 SRAM SAMSUNG UT8Q512K8 36E-4 weibull test data 19E4
Contextual Info: Single Event Effects Qualification UT8Q512K8 RQ02 Lot 6ZVL04 4Mbit SRAM 7/21/03 Craig Hafer 719-594-8319 craig.hafer@aeroflex.com SUMMARY-Single event effects qualification testing was performed on the UTMC 4Mbit SRAM, (Samsung Rev C die), Lot 6ZVL04, at the Lawrence Berkeley Laboratory using

Aeroflex UTMC

Abstract: UT8Q512
Contextual Info: Aeroflex UTMC Product Information Sheet UT8Q512 SRAM Standby/Operating Current Characterization Summary Lot# 5EC026BA Abstract Characterization data generated by analyzing a substantial number of randomly selected UT8Q512 SRAMs shows a mean standby current of 0.80mA at room temperature and mean standby current of 11.91mA at

UT8Q512E

Contextual Info: Standard Products UT8Q512E 512K x 8 RadTol SRAM Data Sheet November 11, 2008 INTRODUCTION The UT8Q512E RadTol product is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable E , an

UT8Q512K32E

Contextual Info: Standard Products UT8Q512K32E 16 Megabit RadTolerant SRAM MCM Advanced Data Sheet June 30, 2008 INTRODUCTION The UT8Q512K32E RadTolerant product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs

Contextual Info: Standard Products UT8Q512 512K x 8 SRAM Preliminary Data Sheet March 12, 2001 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

UT8Q512

Contextual Info: Standard Products UT8Q512 512K x 8 SRAM Preliminary Data Sheet June 5, 2000 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

ut8q512e

Contextual Info: Standard Products UT8Q512E 512K x 8 RadTolerant SRAM Advanced Data Sheet June 30, 2008 INTRODUCTION The UT8Q512E RadTolerant product is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable