obd II connector
Abstract: ASC 108 MXM 3 CONNECTOR MXM CONNECTOR connector 79 pin connector obd II obd connector TO 77 housing diode KIV 62
Text: AUTOMOTIVE CONNECTOR 62 375 CONNECTOR 0WTM * + , <)*<01+36-; <)* ) ! * + , ! ᶀ TERMINAL ʟ 8IZ\6W ;< ! ;< ! ? - 4 ;< ;< ?QZM:IVOM )?/ UU 5I\MZQIT <IJ <PQKS <PQKS .QVQ[P
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312-II
250-III
187-II
090-II
090-II)
obd II connector
ASC 108
MXM 3 CONNECTOR
MXM CONNECTOR
connector
79 pin connector
obd II
obd connector
TO 77 housing
diode KIV 62
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IMPATT
Abstract: No abstract text available
Text: RA45200 Series Silicon Abrupt Junction runing Varactors Features 30 Description Fhe MA45200 series of silicon abrupt junction tuning iaractors has been designed to obtain the highest Q ~ossible.Each- device in this series has a high density silicon dioxide passivation which results in exceptionally
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RA45200
MA45200
IMPATT
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voltage regulator alternator housing
Abstract: ecu alternator voltage regulator 2pin Terminal Connector 64 pin ecu connectors 4 pin terminal block connector ecu fuel ECU PWM 2pin female connector ecu connectors terminal joint box
Text: 050 CONNECTOR ȘTERMINAL ʟ ?/ UU ;< )>; ; f ;< )>; ; f 4 ? <IJ 5I\MZQIT <PQKS <PQKS .QVQ[P ?QZM:IVOM 8IZ\6W ,QUMV[QWVUU +WXXMZ)TTWa 8ZM<QV *ZI[[ 8ZM<QV <aXM 9\a :MMT ʟ
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090-II
040-III
040III
090II
voltage regulator alternator housing
ecu alternator voltage regulator
2pin Terminal Connector
64 pin ecu connectors
4 pin terminal block connector
ecu fuel
ECU PWM
2pin female connector
ecu connectors
terminal joint box
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TLE2021
Abstract: No abstract text available
Text: TLE202x-EP, TLE202xA-EP EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SGLS235D− FEBRUARY 2004 − REVISED SEPTEMBER 2010 D Controlled Baseline D D D D D D † − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of
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TLE202x-EP,
TLE202xA-EP
SGLS235D-
TLE2021
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Untitled
Abstract: No abstract text available
Text: TLE202x-EP, TLE202xA-EP EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SGLS235D− FEBRUARY 2004 − REVISED SEPTEMBER 2010 D Controlled Baseline D D D D D D † − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of
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TLE202x-EP,
TLE202xA-EP
SGLS235Dâ
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15-V
Abstract: OP21 TLE2021AQDREP TLE2021QDREP TLE2022AQDREP TLE2022QDREP TLE2024AQDWREP TLE2024QDWREP 2022QE TLE2024
Text: TLE202x-EP, TLE202xA-EP EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SGLS235D− FEBRUARY 2004 − REVISED SEPTEMBER 2010 D Controlled Baseline D D D D D D † − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of
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TLE202x-EP,
TLE202xA-EP
SGLS235D-
15-V
OP21
TLE2021AQDREP
TLE2021QDREP
TLE2022AQDREP
TLE2022QDREP
TLE2024AQDWREP
TLE2024QDWREP
2022QE
TLE2024
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tle2022
Abstract: TLE2021
Text: TLE202x-EP, TLE202xA-EP EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SGLS235D− FEBRUARY 2004 − REVISED SEPTEMBER 2010 D Controlled Baseline D D D D D D † − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of
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TLE202x-EP,
TLE202xA-EP
SGLS235D-
tle2022
TLE2021
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Untitled
Abstract: No abstract text available
Text: TLE202x-EP, TLE202xA-EP EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SGLS235D− FEBRUARY 2004 − REVISED SEPTEMBER 2010 D Controlled Baseline D D D D D D † − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of
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TLE202x-EP,
TLE202xA-EP
SGLS235Dâ
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Untitled
Abstract: No abstract text available
Text: TLE202x-EP, TLE202xA-EP EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SGLS235D− FEBRUARY 2004 − REVISED SEPTEMBER 2010 D Controlled Baseline D D D D D D † − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of
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TLE202x-EP,
TLE202xA-EP
SGLS235Dâ
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Untitled
Abstract: No abstract text available
Text: TLE202x-EP, TLE202xA-EP EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SGLS235D− FEBRUARY 2004 − REVISED SEPTEMBER 2010 D Controlled Baseline D D D D D D † − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of
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TLE202x-EP,
TLE202xA-EP
SGLS235D-
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LQ11S31
Abstract: d799 800X3X DF90-41S-lV transistor d799 SM02 6000G DF9MA-41P-lV
Text: . WPARED BY : SPEC No. LD-8315 DATE FILE No. SHARP PPROVED BY : DATE ISSUE : Mar. 14, 1996 : 15 pages PAGE TENRI LIQUID CRYSTAL DISPLAY GROUP SHARP CORPORATION APPLICABLE GROUP Tenri Liquid Crystal Display Group SPECIFICATION r ‘\, DEVICE SPECIFICATION FOR
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LD-8315
LQ11S31
LD-8315
13Z39
LQ11S31
d799
800X3X
DF90-41S-lV
transistor d799
SM02
6000G
DF9MA-41P-lV
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Untitled
Abstract: No abstract text available
Text: TLE202x, TLE202xA, TLE202xB, TLE202xY EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SLOS191D − FEBRUARY 1997 − REVISED NOVEMBER 2010 D D D D D D Supply Current . . . 300 A Max High Unity-Gain Bandwidth . . . 2 MHz Typ High Slew Rate . . . 0.45 V/μs Min
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TLE202x,
TLE202xA,
TLE202xB,
TLE202xY
SLOS191D
TLE202xB
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Untitled
Abstract: No abstract text available
Text: TLE202x, TLE202xA, TLE202xB, TLE202xY EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SLOS191D − FEBRUARY 1997 − REVISED NOVEMBER 2010 D D D D D D Supply Current . . . 300 A Max High Unity-Gain Bandwidth . . . 2 MHz Typ High Slew Rate . . . 0.45 V/μs Min
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TLE202x,
TLE202xA,
TLE202xB,
TLE202xY
SLOS191D
TLE202xB
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Untitled
Abstract: No abstract text available
Text: TLE202x, TLE202xA, TLE202xB, TLE202xY EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SLOS191D − FEBRUARY 1997 − REVISED NOVEMBER 2010 D D D D D D Supply Current . . . 300 A Max High Unity-Gain Bandwidth . . . 2 MHz Typ High Slew Rate . . . 0.45 V/μs Min
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TLE202x,
TLE202xA,
TLE202xB,
TLE202xY
SLOS191D
TLE202xB
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Untitled
Abstract: No abstract text available
Text: TLE202x, TLE202xA, TLE202xB, TLE202xY EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SLOS191D − FEBRUARY 1997 − REVISED NOVEMBER 2010 D D D D D D Supply Current . . . 300 A Max High Unity-Gain Bandwidth . . . 2 MHz Typ High Slew Rate . . . 0.45 V/μs Min
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TLE202x,
TLE202xA,
TLE202xB,
TLE202xY
SLOS191D
TLE202xB
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Untitled
Abstract: No abstract text available
Text: TLE202x, TLE202xA, TLE202xB, TLE202xY EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SLOS191D − FEBRUARY 1997 − REVISED NOVEMBER 2010 D D D D D D Supply Current . . . 300 A Max High Unity-Gain Bandwidth . . . 2 MHz Typ High Slew Rate . . . 0.45 V/μs Min
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TLE202x,
TLE202xA,
TLE202xB,
TLE202xY
SLOS191D
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Untitled
Abstract: No abstract text available
Text: TLE202x, TLE202xA, TLE202xB, TLE202xY EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SLOS191D − FEBRUARY 1997 − REVISED NOVEMBER 2010 D D D D D D Supply Current . . . 300 A Max High Unity-Gain Bandwidth . . . 2 MHz Typ High Slew Rate . . . 0.45 V/μs Min
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TLE202x,
TLE202xA,
TLE202xB,
TLE202xY
SLOS191D
TLE202xB
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74LVC16245A
Abstract: 74LVCH16245A VC16245ADL
Text: Philips Semiconductors Product specification 16-bit bus transceiver pin 3-State o u i uua i a a u ; e with i direction u eu u p W oic»«, 74LVC 74LVC H 16245A 16245A PIN CONFIGURATION FEATURES • 5 volt tolerant inputs/outputs for interfacing with 5V logic
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16-bit
74LVC16245A
74LVCH16245A
74LVCH16245A
74LVC16245A/74LVCH1
SQT370-1
MO-118AA
VC16245ADL
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Z10V
Abstract: No abstract text available
Text: B b ix o A H o ft jiy q e B o fi T e T p o a ónóc Output beam tetrode a jiH The 6116C o u tp u t beam tetrode is designed for am plification of low-frequency power. B bixoflH O H jiy q e B o it T eT p o ji 6 Ì I 6 C n p e jm a s H a ^ e H y c H Jie H H a m o u i h o c t h h h 3 k o h q acT O T b i.
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6116C
B0336HCTBHK)
heate50
6I16C
Z10V
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marking M5D
Abstract: IRC530 RC530 ScansUX1007 ww1 sd
Text: PD-9.454D International k 1Rectifier IRC530 HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^D S S ~ 1 0 0 V R DS{on = 0 . 1 6 0
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IRC530
marking M5D
RC530
ScansUX1007
ww1 sd
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23232B/BL-xxBS16/DS16 2,097,152-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23232B/BL -xxBS16/D S16 is a fully decoded 2,097,152-word x 32-bit CM OS Dynamic Ran dom Access M em ory M odule com posed of sixteen 4-M b DRAMs in SOJ M SM 514400B/BL packages
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MSC23232B/BL-xxBS16/DS16
152-Word
32-Bit
23232B/BL
-xxBS16/D
514400B/BL)
72-pin
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HYM53
Abstract: No abstract text available
Text: • HYUNDAI HYM536A810A M-Series 8M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each
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HYM536A810A
36-bit
HYM536A81OA
HY5117400A
HYM536A81OAM/ASLM
HYM536A810AMG/ASLMG
HYM536A800A/ASL
1CF16-10-AUG95
HYM53
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Burroughs Self-Scan
Abstract: B255A Peripheral interface 8255 with ADC Burroughs D504D 8255a PPI 8255 interface keyboard interfacing with 8255 microprocessors WM-71 PPI 8255 interface word control logic controller
Text: intJ 8255A/8255A-5 PROGRAMMABLE PERIPHERAL INTERFACE • MCS-85TM Compatible 8255A-5 ■ 24 Programmable I/O Pins ■ Direct Bit Set/Reset Capability Easing Control Application Interface ■ Completely TTL Compatible ■ Reduces System Package Count ■ Fully Compatible with Intel
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255A/8255A-5
255A/8255A-5
Burroughs Self-Scan
B255A
Peripheral interface 8255 with ADC
Burroughs
D504D
8255a
PPI 8255 interface
keyboard interfacing with 8255 microprocessors
WM-71
PPI 8255 interface word control logic controller
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CHN 423
Abstract: No abstract text available
Text: i MF TRUNK RECEIVERS & TRANSMITTERS M-986-1R2 & -2R2 MF Transceivers Teltone M-986-1R2 and -2R2 MFC Transceivers contain all the logic necessary to transmit and receive CCITT R2F forward and R2B (backward) multifrequency signals on one integrated circuit (IC). M-986-1R2 is a single-channel ver
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M-986-1R2
M-986-1R2
M-986-2R2
M-986-1R1
M-986
M-986-R2
22121-20th
CHN 423
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