UV ERASURE EPROM Search Results

30pFJ

Abstract: 27CX161-45 ZD 260 CS3 16 equivalent
Contextual Info: ÄK 27CX16 1 / 1 6 2 16Kbit CMOS H igh-Speed UV-Erasable PROM FEATURES ITTL-Compatible I/O IReprogrammability — Adds convenience, reduces costs — Windowed package for UV erasure —Allows 100% factory testing •Bipolar PROM replacement — Pin-compatible with Bipolar PROMs

27CX256C-45

Abstract: 27CX256C-55
Contextual Info: , INC._ 27CX256 256K 32K x 8 CMOS High-Speed EPROM Features • Reprogrammability — Adds convenience, reduces costs — Windowed package tor UV erasure — Allows 100% factory testing ■ Advanced CMOS EPROM Technology

27CX010C-45

Abstract: 27CX010C-55 27CX010C-70 UNIPAK
Contextual Info: , INC._ 27CX010 1M 128K x 8 CMOS High-Speed EPROM Features Reprog rammabllity — Adds convenience, reduces costs — Windowed package for UV erasure — Allows 100% factory testing Advanced CMOS EPROM Technology High Performance

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. 27CX321 /27CX322 4,096 X 8-bit CMOS High-Speed Erasable PROM Features Reprogrammablllty Advanced CMOS EPROM Technology — Adds convenience, reduces costs — Windowed package for UV erasure — Allows 100% factory testing

27CX641

Abstract: 27CX641-45 UNIPAK
Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. 27CX641 /27CX642 8,192 X 8-bit CMOS High-Speed Erasable PROM Features Reprogrammabillty • Advanced CMOS EPROM Technology — Adds convenience, reduces costs — Windowed package for UV erasure — Allows 100% factory testing

CY27C256

Abstract: 27C256-70 27C256 27C256-200 27C256-45 27C256 UV 27C256-150 27c256120
Contextual Info: fax id: 3013 1CY 27C2 56 CY27C256 32K x 8-Bit CMOS EPROM Features able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and

Astrosyn

Abstract: eproms eraser uv lamp eprom eraser eprom UV eraser uv erasure eprom
Contextual Info: Eprom Eraser ME5E General Information The ME5E eprom eraser is designed for simple low-volume applications requiring controlled UV exposure. This model is a robust table top design that is constructed to operate consistently and reliably over a long life. The ME5E incorporates advanced features to ensure dependable erasure

SMD diode TSA

Abstract: 7c245a
Contextual Info: CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description The CY7C245A is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a slim 300-mil plastic or hermetic DIP. The ceramic package may be equipped with an erasure window; when exposed to UV light

518-0102

Abstract: 7C245A CY7C245A CY7C245A-25DMB CY7C245A-25LMB 7C245A-18 7C245A-35 A10A4 7c245 7C245A-15
Contextual Info: CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description The CY7C245A is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a slim 300-mil plastic or hermetic DIP. The ceramic package may be equipped with an erasure window; when exposed to UV light

7C245A

Abstract: CY7C245A CY7C245A-25DMB CY7C245A-25LMB CY7C245A-15JI
Contextual Info: CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description The CY7C245A is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a slim 300-mil plastic or hermetic DIP. The ceramic package may be equipped with an erasure window; when exposed to UV light

Contextual Info: 66 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM

CY27C256

Contextual Info: fax id: 3013 p yXpX : v « *1 CY27C256 - 32K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light,

w16 90

Abstract: 27C64 CY7C266 R1250 27C64 8k EPROM MS-020
Contextual Info: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM

Contextual Info: PRELIMINARY CY7C271A 32K x 8 Power Switched and Reprogrammable PROM Features matically powers down into a low-power stand-by mode. The CY7C271A is packaged in the 300-mil slim package and is available in a cerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV

CY7C245A-25DMB

Abstract: 7C245A CY7C245A CY7C245A-25LMB SMD diode TSA 7C245A-15 A3 smd diode spec
Contextual Info: CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description The CY7C245A is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a slim 300-mil plastic or hermetic DIP. The ceramic package may be equipped with an erasure window; when exposed to UV light

27C128

Abstract: 27C128-200 eprom 27C128 27C128 eprom transistor C128 27C1 C128 CY27C128 c1281
Contextual Info: fax id: 3011 1CY 27C1 28 CY27C128 128K 16K x 8-Bit CMOS EPROM Features CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms.

Contextual Info: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM

K74 (2 GATE)

Abstract: 330 j65 CY7C271A-35WC A9 pin contact CY7C271A PROMs
Contextual Info: fax id: 3016 1CY 7C27 1A PRELIMINARY CY7C271A 32K x 8 Power Switched and Reprogrammable Features matically powers down into a low-power stand-by mode. The CY7C271A is packaged in the 300-mil slim package and is available in a cerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV

c271a

Abstract: CY7C271A
Contextual Info: fax id: 3016 PRELIMINARY CY7C271A 32K x 8 Power Switched and Reprogrammable PROM Features matically powers down into a low-power stand-by mode. The CY7C271A is packaged in the 300-mil slim package and is available in a cerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV

CY7C271A

Abstract: CY7C271A-25JC CY7C271A-30W
Contextual Info: 71A PRELIMINARY CY7C271A 32K x 8 Power Switched and Reprogrammable PROM Features matically powers down into a low-power stand-by mode. The CY7C271A is packaged in the 300-mil slim package and is available in a cerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV

27C64-150

Abstract: 27C64-3 eprom 27c64 27C64 27C64-1 27C64-2 27C64-200 CY27C64 27C644 27C64 8k EPROM
Contextual Info: fax id: 3006 1CY 27C6 4 CY27C64 8K x 8 EPROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these EPROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.

semiconductor c243

Abstract: transistor c243 CY7C243-45QMB c243 diode c2432 C2434 C2437 cerdip z PACKAGE DN2540N5-G CY7C243
Contextual Info: 1CY 7C24 4 CY7C243 CY7C244 4Kx8 Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power The CY7C243 and CY7C244 are high-performance 4K x 8 CMOS PROMs. The CY7C243 and CY7C244 are packaged in 300-mil-wide and 600-mil-wide packages respectively. The reprogrammable packages are equipped with an erasure window. When exposed to UV light, these PROMs are erased and

National Controls ne 545

Abstract: 27C010 27C040 27C080 27C256 27C512 NM27C020 eprom connection NM27C020N fairchild eprom
Contextual Info: NM27C020 2,097,152-Bit 256K x 8 UV Erasable CMOS EPROM General Description Features The NM27C020 is a high speed 2 Megabit CMOS UV-EPROM manufactured on Fairchild’s advanced sub-micron technology. Utilizing the AMG architecture, this advanced CMOS process

27C010

Abstract: 27C040 27C080 27C256 27C512 NM27C020
Contextual Info: NM27C020 2,097,152-Bit 256K x 8 UV Erasable CMOS EPROM General Description Features The NM27C020 is a high speed 2 Megabit CMOS UV-EPROM manufactured on Fairchild’s advanced sub-micron technology. Utilizing the AMG architecture, this advanced CMOS process