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    UV ERASURE EPROM Search Results

    UV ERASURE EPROM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27C256-55DM/B Rochester Electronics AM27C256 - 256K (32KX8) CMOS EPROM Visit Rochester Electronics Buy
    AM27C010-55PI-G Rochester Electronics AM27C010 - EPROM - OTP, EPROM - UV 1Mbit 128k x 8 Visit Rochester Electronics Buy
    D2716 Rochester Electronics LLC EPROM Visit Rochester Electronics LLC Buy
    AM27C010-70PI-G Rochester Electronics AM27C010 - CMOS EPROM 1 Megabit (128K x 8) Visit Rochester Electronics Buy
    AM27C512-200DCB Rochester Electronics AM27C512 - 512K (64K x 8) CMOS EPROM Visit Rochester Electronics Buy

    UV ERASURE EPROM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY27C256

    Abstract: 27C256-70 27C256 27C256-200 27C256-45 27C256 UV 27C256-150 27c256120
    Text: fax id: 3013 1CY 27C2 56 CY27C256 32K x 8-Bit CMOS EPROM Features able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and


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    PDF CY27C256 CY27C256 27C256-70 27C256 27C256-200 27C256-45 27C256 UV 27C256-150 27c256120

    Astrosyn

    Abstract: eproms eraser uv lamp eprom eraser eprom UV eraser uv erasure eprom
    Text: Eprom Eraser ME5E General Information The ME5E eprom eraser is designed for simple low-volume applications requiring controlled UV exposure. This model is a robust table top design that is constructed to operate consistently and reliably over a long life. The ME5E incorporates advanced features to ensure dependable erasure


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    PDF 4000uW/sq Astrosyn eproms eraser uv lamp eprom eraser eprom UV eraser uv erasure eprom

    SMD diode TSA

    Abstract: 7c245a
    Text: CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description The CY7C245A is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a slim 300-mil plastic or hermetic DIP. The ceramic package may be equipped with an erasure window; when exposed to UV light


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    PDF CY7C245A 15-ns 10-ns 300-mil, 24-pin CY7C245A CY7C245A-15JI SMD diode TSA 7c245a

    518-0102

    Abstract: 7C245A CY7C245A CY7C245A-25DMB CY7C245A-25LMB 7C245A-18 7C245A-35 A10A4 7c245 7C245A-15
    Text: CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description The CY7C245A is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a slim 300-mil plastic or hermetic DIP. The ceramic package may be equipped with an erasure window; when exposed to UV light


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    PDF CY7C245A CY7C245A 300-mil 15-ns 10-ns CY7C245A-15JI 518-0102 7C245A CY7C245A-25DMB CY7C245A-25LMB 7C245A-18 7C245A-35 A10A4 7c245 7C245A-15

    7C245A

    Abstract: CY7C245A CY7C245A-25DMB CY7C245A-25LMB CY7C245A-15JI
    Text: CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description The CY7C245A is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a slim 300-mil plastic or hermetic DIP. The ceramic package may be equipped with an erasure window; when exposed to UV light


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    PDF CY7C245A CY7C245A 300-mil 15-ns 10-ns aY7C245A CY7C245A-15JI 7C245A CY7C245A-25DMB CY7C245A-25LMB

    Untitled

    Abstract: No abstract text available
    Text: 66 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM


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    PDF CY7C266 600-mil-wide CY7C266

    w16 90

    Abstract: 27C64 CY7C266 R1250 27C64 8k EPROM MS-020
    Text: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM


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    PDF CY7C266 600-mil-wide CY7C266 w16 90 27C64 R1250 27C64 8k EPROM MS-020

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY7C271A 32K x 8 Power Switched and Reprogrammable PROM Features matically powers down into a low-power stand-by mode. The CY7C271A is packaged in the 300-mil slim package and is available in a cerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV


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    PDF CY7C271A 300-mil CY7C271A

    27C64

    Abstract: CY7C266 R1250 8kx8 eprom pin diagram
    Text: 1CY7C266 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM


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    PDF 1CY7C266 CY7C266 600-mil-wide CY7C266 27C64 R1250 8kx8 eprom pin diagram

    CY7C245A-25DMB

    Abstract: 7C245A CY7C245A CY7C245A-25LMB SMD diode TSA 7C245A-15 A3 smd diode spec
    Text: CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description The CY7C245A is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a slim 300-mil plastic or hermetic DIP. The ceramic package may be equipped with an erasure window; when exposed to UV light


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    PDF CY7C245A CY7C245A 300-mil 15-ns 10-ns CY7C245A-15JI CY7C245A-25DMB 7C245A CY7C245A-25LMB SMD diode TSA 7C245A-15 A3 smd diode spec

    27C128

    Abstract: 27C128-200 eprom 27C128 27C128 eprom transistor C128 27C1 C128 CY27C128 c1281
    Text: fax id: 3011 1CY 27C1 28 CY27C128 128K 16K x 8-Bit CMOS EPROM Features CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms.


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    PDF CY27C128 CY27C128 384-word 27C128 27C128-200 eprom 27C128 27C128 eprom transistor C128 27C1 C128 c1281

    Untitled

    Abstract: No abstract text available
    Text: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM


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    PDF CY7C266 27C64 600-mil-wide CY7C266

    K74 (2 GATE)

    Abstract: 330 j65 CY7C271A-35WC A9 pin contact CY7C271A PROMs
    Text: fax id: 3016 1CY 7C27 1A PRELIMINARY CY7C271A 32K x 8 Power Switched and Reprogrammable Features matically powers down into a low-power stand-by mode. The CY7C271A is packaged in the 300-mil slim package and is available in a cerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV


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    PDF CY7C271A CY7C271A 300-mil K74 (2 GATE) 330 j65 CY7C271A-35WC A9 pin contact PROMs

    c271a

    Abstract: CY7C271A
    Text: fax id: 3016 PRELIMINARY CY7C271A 32K x 8 Power Switched and Reprogrammable PROM Features matically powers down into a low-power stand-by mode. The CY7C271A is packaged in the 300-mil slim package and is available in a cerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV


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    PDF CY7C271A CY7C271A 300-mil c271a

    27C64-150

    Abstract: 27C64-3 eprom 27c64 27C64 27C64-1 27C64-2 27C64-200 CY27C64 27C644 27C64 8k EPROM
    Text: fax id: 3006 1CY 27C6 4 CY27C64 8K x 8 EPROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these EPROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.


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    PDF CY27C64 600-mil-wide 27C64-150 27C64-3 eprom 27c64 27C64 27C64-1 27C64-2 27C64-200 CY27C64 27C644 27C64 8k EPROM

    semiconductor c243

    Abstract: transistor c243 CY7C243-45QMB c243 diode c2432 C2434 C2437 cerdip z PACKAGE DN2540N5-G CY7C243
    Text: 1CY 7C24 4 CY7C243 CY7C244 4Kx8 Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power The CY7C243 and CY7C244 are high-performance 4K x 8 CMOS PROMs. The CY7C243 and CY7C244 are packaged in 300-mil-wide and 600-mil-wide packages respectively. The reprogrammable packages are equipped with an erasure window. When exposed to UV light, these PROMs are erased and


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    PDF CY7C243 CY7C244 CY7C243 CY7C244 300-mil-wide 600-mil-wide semiconductor c243 transistor c243 CY7C243-45QMB c243 diode c2432 C2434 C2437 cerdip z PACKAGE DN2540N5-G

    National Controls ne 545

    Abstract: 27C010 27C040 27C080 27C256 27C512 NM27C020 eprom connection NM27C020N fairchild eprom
    Text: NM27C020 2,097,152-Bit 256K x 8 UV Erasable CMOS EPROM General Description Features The NM27C020 is a high speed 2 Megabit CMOS UV-EPROM manufactured on Fairchild’s advanced sub-micron technology. Utilizing the AMG architecture, this advanced CMOS process


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    PDF NM27C020 152-Bit NM27C020 100ns National Controls ne 545 27C010 27C040 27C080 27C256 27C512 eprom connection NM27C020N fairchild eprom

    27C010

    Abstract: 27C040 27C080 27C256 27C512 NM27C020
    Text: NM27C020 2,097,152-Bit 256K x 8 UV Erasable CMOS EPROM General Description Features The NM27C020 is a high speed 2 Megabit CMOS UV-EPROM manufactured on Fairchild’s advanced sub-micron technology. Utilizing the AMG architecture, this advanced CMOS process


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    PDF NM27C020 152-Bit NM27C020 100ns C1793-856858 27C010 27C040 27C080 27C256 27C512

    30pFJ

    Abstract: 27CX161-45 ZD 260 CS3 16 equivalent
    Text: ÄK 27CX16 1 / 1 6 2 16Kbit CMOS H igh-Speed UV-Erasable PROM FEATURES ITTL-Compatible I/O IReprogrammability — Adds convenience, reduces costs — Windowed package for UV erasure —Allows 100% factory testing •Bipolar PROM replacement — Pin-compatible with Bipolar PROMs


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    PDF K27CX161/162 16Kbit AK27CX161/162-35 AK27CX161/162-40 AK27CX161/162-45 300-mil AK27CX162) 600-mil AK27CX161) 30pFj- 30pFJ 27CX161-45 ZD 260 CS3 16 equivalent

    27CX256C-45

    Abstract: 27CX256C-55
    Text: , INC._ 27CX256 256K 32K x 8 CMOS High-Speed EPROM Features • Reprogrammability — Adds convenience, reduces costs — Windowed package tor UV erasure — Allows 100% factory testing ■ Advanced CMOS EPROM Technology


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    PDF 27CX256 27CX256C-35 27CX256C-45 27CX256C-55 28-pin 27CX256 144-bit

    27CX010C-45

    Abstract: 27CX010C-55 27CX010C-70 UNIPAK
    Text: , INC._ 27CX010 1M 128K x 8 CMOS High-Speed EPROM Features Reprog rammabllity — Adds convenience, reduces costs — Windowed package for UV erasure — Allows 100% factory testing Advanced CMOS EPROM Technology High Performance


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    PDF 27CX010 27CX010C-45 27CX010C-55 27CX010C-70 32-pin 27CX010 27CX010C-45 27CX010C-55 27CX010C-70 UNIPAK

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL CMOS TECHNOLOGY, INC. 27CX321 /27CX322 4,096 X 8-bit CMOS High-Speed Erasable PROM Features Reprogrammablllty Advanced CMOS EPROM Technology — Adds convenience, reduces costs — Windowed package for UV erasure — Allows 100% factory testing


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    PDF 27CX321 /27CX322 27CX321/322-35 27CX321/322-40 27CX321/322-45 500nA 300-mil 600-mil 27CX3ld

    27CX641

    Abstract: 27CX641-45 UNIPAK
    Text: INTERNATIONAL CMOS TECHNOLOGY, INC. 27CX641 /27CX642 8,192 X 8-bit CMOS High-Speed Erasable PROM Features Reprogrammabillty • Advanced CMOS EPROM Technology — Adds convenience, reduces costs — Windowed package for UV erasure — Allows 100% factory testing


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    PDF 27CX641 /27CX642 27CX641/642-40 27CX641/642-45 27CX641/642-55 300-mil 600-mil 27CX642 27CX641/642 27CX641-45 UNIPAK

    CY27C256

    Abstract: No abstract text available
    Text: fax id: 3013 p yXpX : v « *1 CY27C256 - 32K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light,


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    PDF CY27C256 CY27C256