CY27C256
Abstract: 27C256-70 27C256 27C256-200 27C256-45 27C256 UV 27C256-150 27c256120
Text: fax id: 3013 1CY 27C2 56 CY27C256 32K x 8-Bit CMOS EPROM Features able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and
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CY27C256
CY27C256
27C256-70
27C256
27C256-200
27C256-45
27C256 UV
27C256-150
27c256120
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Astrosyn
Abstract: eproms eraser uv lamp eprom eraser eprom UV eraser uv erasure eprom
Text: Eprom Eraser ME5E General Information The ME5E eprom eraser is designed for simple low-volume applications requiring controlled UV exposure. This model is a robust table top design that is constructed to operate consistently and reliably over a long life. The ME5E incorporates advanced features to ensure dependable erasure
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4000uW/sq
Astrosyn
eproms eraser
uv lamp
eprom eraser
eprom UV eraser
uv erasure eprom
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SMD diode TSA
Abstract: 7c245a
Text: CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description The CY7C245A is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a slim 300-mil plastic or hermetic DIP. The ceramic package may be equipped with an erasure window; when exposed to UV light
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CY7C245A
15-ns
10-ns
300-mil,
24-pin
CY7C245A
CY7C245A-15JI
SMD diode TSA
7c245a
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518-0102
Abstract: 7C245A CY7C245A CY7C245A-25DMB CY7C245A-25LMB 7C245A-18 7C245A-35 A10A4 7c245 7C245A-15
Text: CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description The CY7C245A is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a slim 300-mil plastic or hermetic DIP. The ceramic package may be equipped with an erasure window; when exposed to UV light
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CY7C245A
CY7C245A
300-mil
15-ns
10-ns
CY7C245A-15JI
518-0102
7C245A
CY7C245A-25DMB
CY7C245A-25LMB
7C245A-18
7C245A-35
A10A4
7c245
7C245A-15
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7C245A
Abstract: CY7C245A CY7C245A-25DMB CY7C245A-25LMB CY7C245A-15JI
Text: CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description The CY7C245A is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a slim 300-mil plastic or hermetic DIP. The ceramic package may be equipped with an erasure window; when exposed to UV light
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CY7C245A
CY7C245A
300-mil
15-ns
10-ns
aY7C245A
CY7C245A-15JI
7C245A
CY7C245A-25DMB
CY7C245A-25LMB
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Untitled
Abstract: No abstract text available
Text: 66 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM
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CY7C266
600-mil-wide
CY7C266
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w16 90
Abstract: 27C64 CY7C266 R1250 27C64 8k EPROM MS-020
Text: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM
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CY7C266
600-mil-wide
CY7C266
w16 90
27C64
R1250
27C64 8k EPROM
MS-020
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY7C271A 32K x 8 Power Switched and Reprogrammable PROM Features matically powers down into a low-power stand-by mode. The CY7C271A is packaged in the 300-mil slim package and is available in a cerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV
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CY7C271A
300-mil
CY7C271A
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27C64
Abstract: CY7C266 R1250 8kx8 eprom pin diagram
Text: 1CY7C266 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM
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1CY7C266
CY7C266
600-mil-wide
CY7C266
27C64
R1250
8kx8 eprom pin diagram
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CY7C245A-25DMB
Abstract: 7C245A CY7C245A CY7C245A-25LMB SMD diode TSA 7C245A-15 A3 smd diode spec
Text: CY7C245A 2K x 8 Reprogrammable Registered PROM Features Functional Description The CY7C245A is a high-performance, 2K x 8, electrically programmable, read-only memory packaged in a slim 300-mil plastic or hermetic DIP. The ceramic package may be equipped with an erasure window; when exposed to UV light
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CY7C245A
CY7C245A
300-mil
15-ns
10-ns
CY7C245A-15JI
CY7C245A-25DMB
7C245A
CY7C245A-25LMB
SMD diode TSA
7C245A-15
A3 smd diode spec
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27C128
Abstract: 27C128-200 eprom 27C128 27C128 eprom transistor C128 27C1 C128 CY27C128 c1281
Text: fax id: 3011 1CY 27C1 28 CY27C128 128K 16K x 8-Bit CMOS EPROM Features CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms.
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CY27C128
CY27C128
384-word
27C128
27C128-200
eprom 27C128
27C128 eprom
transistor C128
27C1
C128
c1281
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Untitled
Abstract: No abstract text available
Text: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM
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CY7C266
27C64
600-mil-wide
CY7C266
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K74 (2 GATE)
Abstract: 330 j65 CY7C271A-35WC A9 pin contact CY7C271A PROMs
Text: fax id: 3016 1CY 7C27 1A PRELIMINARY CY7C271A 32K x 8 Power Switched and Reprogrammable Features matically powers down into a low-power stand-by mode. The CY7C271A is packaged in the 300-mil slim package and is available in a cerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV
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CY7C271A
CY7C271A
300-mil
K74 (2 GATE)
330 j65
CY7C271A-35WC
A9 pin contact
PROMs
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c271a
Abstract: CY7C271A
Text: fax id: 3016 PRELIMINARY CY7C271A 32K x 8 Power Switched and Reprogrammable PROM Features matically powers down into a low-power stand-by mode. The CY7C271A is packaged in the 300-mil slim package and is available in a cerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV
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CY7C271A
CY7C271A
300-mil
c271a
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27C64-150
Abstract: 27C64-3 eprom 27c64 27C64 27C64-1 27C64-2 27C64-200 CY27C64 27C644 27C64 8k EPROM
Text: fax id: 3006 1CY 27C6 4 CY27C64 8K x 8 EPROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these EPROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.
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CY27C64
600-mil-wide
27C64-150
27C64-3
eprom 27c64
27C64
27C64-1
27C64-2
27C64-200
CY27C64
27C644
27C64 8k EPROM
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semiconductor c243
Abstract: transistor c243 CY7C243-45QMB c243 diode c2432 C2434 C2437 cerdip z PACKAGE DN2540N5-G CY7C243
Text: 1CY 7C24 4 CY7C243 CY7C244 4Kx8 Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power The CY7C243 and CY7C244 are high-performance 4K x 8 CMOS PROMs. The CY7C243 and CY7C244 are packaged in 300-mil-wide and 600-mil-wide packages respectively. The reprogrammable packages are equipped with an erasure window. When exposed to UV light, these PROMs are erased and
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CY7C243
CY7C244
CY7C243
CY7C244
300-mil-wide
600-mil-wide
semiconductor c243
transistor c243
CY7C243-45QMB
c243 diode
c2432
C2434
C2437
cerdip z PACKAGE
DN2540N5-G
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National Controls ne 545
Abstract: 27C010 27C040 27C080 27C256 27C512 NM27C020 eprom connection NM27C020N fairchild eprom
Text: NM27C020 2,097,152-Bit 256K x 8 UV Erasable CMOS EPROM General Description Features The NM27C020 is a high speed 2 Megabit CMOS UV-EPROM manufactured on Fairchild’s advanced sub-micron technology. Utilizing the AMG architecture, this advanced CMOS process
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NM27C020
152-Bit
NM27C020
100ns
National Controls ne 545
27C010
27C040
27C080
27C256
27C512
eprom connection
NM27C020N
fairchild eprom
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27C010
Abstract: 27C040 27C080 27C256 27C512 NM27C020
Text: NM27C020 2,097,152-Bit 256K x 8 UV Erasable CMOS EPROM General Description Features The NM27C020 is a high speed 2 Megabit CMOS UV-EPROM manufactured on Fairchild’s advanced sub-micron technology. Utilizing the AMG architecture, this advanced CMOS process
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NM27C020
152-Bit
NM27C020
100ns
C1793-856858
27C010
27C040
27C080
27C256
27C512
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30pFJ
Abstract: 27CX161-45 ZD 260 CS3 16 equivalent
Text: ÄK 27CX16 1 / 1 6 2 16Kbit CMOS H igh-Speed UV-Erasable PROM FEATURES ITTL-Compatible I/O IReprogrammability — Adds convenience, reduces costs — Windowed package for UV erasure —Allows 100% factory testing •Bipolar PROM replacement — Pin-compatible with Bipolar PROMs
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K27CX161/162
16Kbit
AK27CX161/162-35
AK27CX161/162-40
AK27CX161/162-45
300-mil
AK27CX162)
600-mil
AK27CX161)
30pFj-
30pFJ
27CX161-45
ZD 260
CS3 16 equivalent
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27CX256C-45
Abstract: 27CX256C-55
Text: , INC._ 27CX256 256K 32K x 8 CMOS High-Speed EPROM Features • Reprogrammability — Adds convenience, reduces costs — Windowed package tor UV erasure — Allows 100% factory testing ■ Advanced CMOS EPROM Technology
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27CX256
27CX256C-35
27CX256C-45
27CX256C-55
28-pin
27CX256
144-bit
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27CX010C-45
Abstract: 27CX010C-55 27CX010C-70 UNIPAK
Text: , INC._ 27CX010 1M 128K x 8 CMOS High-Speed EPROM Features Reprog rammabllity — Adds convenience, reduces costs — Windowed package for UV erasure — Allows 100% factory testing Advanced CMOS EPROM Technology High Performance
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27CX010
27CX010C-45
27CX010C-55
27CX010C-70
32-pin
27CX010
27CX010C-45
27CX010C-55
27CX010C-70
UNIPAK
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL CMOS TECHNOLOGY, INC. 27CX321 /27CX322 4,096 X 8-bit CMOS High-Speed Erasable PROM Features Reprogrammablllty Advanced CMOS EPROM Technology — Adds convenience, reduces costs — Windowed package for UV erasure — Allows 100% factory testing
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27CX321
/27CX322
27CX321/322-35
27CX321/322-40
27CX321/322-45
500nA
300-mil
600-mil
27CX3ld
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27CX641
Abstract: 27CX641-45 UNIPAK
Text: INTERNATIONAL CMOS TECHNOLOGY, INC. 27CX641 /27CX642 8,192 X 8-bit CMOS High-Speed Erasable PROM Features Reprogrammabillty • Advanced CMOS EPROM Technology — Adds convenience, reduces costs — Windowed package for UV erasure — Allows 100% factory testing
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27CX641
/27CX642
27CX641/642-40
27CX641/642-45
27CX641/642-55
300-mil
600-mil
27CX642
27CX641/642
27CX641-45
UNIPAK
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CY27C256
Abstract: No abstract text available
Text: fax id: 3013 p yXpX : v « *1 CY27C256 - 32K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light,
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CY27C256
CY27C256
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